Patents by Inventor Misuzu Abe

Misuzu Abe has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor laser light emitting device
    Patent number: 7003008
    Abstract: Disclosed is a semiconductor laser light emitting device including: a stacked film composed of a stack of group III nitride semiconductor films each containing at least one kind selected from aluminum, gallium, indium, and boron; wherein an upper portion of the stacked film is formed into a ridge-like stripe, to form a current injection region; a current non-injection region formed on both sides of the ridge-like stripe; and at least part of the current non-injection region is made from a material expressed by a chemical formula AlxGa1?xN (0?x?1.0). In this device, the component ratio “x” of Al is specified at a value in a range of 0.3?x?1.0, so that the semiconductor laser light emitting device is configured as an index guide type semiconductor laser light emitting device; the component ratio “x” of Al is specified at a value in a range of 0.15<x<0.
    Type: Grant
    Filed: March 7, 2005
    Date of Patent: February 21, 2006
    Assignee: Sony Corporation
    Inventors: Hiroshi Yoshida, Misuzu Abe, Maho Ohara, Takashi Yamaguchi, Hiroshi Nakajima
  • Semiconductor laser light emitting device
    Publication number: 20050147144
    Abstract: Disclosed is a semiconductor laser light emitting device including: a stacked film composed of a stack of group III nitride semiconductor films each containing at least one kind selected from aluminum, gallium, indium, and boron; wherein an upper portion of the stacked film is formed into a ridge-like stripe, to form a current injection region; a current non-injection region formed on both sides of the ridge-like stripe; and at least part of the current non-injection region is made from a material expressed by a chemical formula AlxGa1-xN (0?x?1.0). In this device, the component ratio “x” of Al is specified at a value in a range of 0.3?x?1.0, so that the semiconductor laser light emitting device is configured as an index guide type semiconductor laser light emitting device; the component ratio “x” of Al is specified at a value in a range of 0.15<x<0.
    Type: Application
    Filed: March 7, 2005
    Publication date: July 7, 2005
    Inventors: Hiroshi Yoshida, Misuzu Abe, Maho Ohara, Takashi Yamaguchi, Hiroshi Nakajima
  • Semiconductor laser light emitting device
    Patent number: 6865203
    Abstract: Disclosed is a semiconductor laser light emitting device including: a stacked film composed of a stack of group III nitride semiconductor films each containing at least one kind selected from aluminum, gallium, indium, and boron; wherein an upper portion of the stacked film is formed into a ridge-like stripe, to form a current injection region; a current non-injection region formed on both sides of the ridge-like stripe; and at least part of the current non-injection region is made from a material expressed by a chemical formula AlxGa1-xN (0?x?1.0). In this device, the component ratio “x” of Al is specified at a value in a range of 0.3?x?1.0, so that the semiconductor laser light emitting device is configured as an index guide type semiconductor laser light emitting device; the component ratio “x” of Al is specified at a value in a range of 0.15<x<0.
    Type: Grant
    Filed: March 23, 2001
    Date of Patent: March 8, 2005
    Assignee: Sony Corporation
    Inventors: Hiroshi Yoshida, Misuzu Abe, Maho Ohara, Takashi Yamaguchi, Hiroshi Nakajima
  • Semiconductor laser light emitting device
    Publication number: 20020003823
    Abstract: Disclosed is a semiconductor laser light emitting device including: a stacked film composed of a stack of group III nitride semiconductor films each containing at least one kind selected from aluminum, gallium, indium, and boron; wherein an upper portion of the stacked film is formed into a ridge-like stripe, to form a current injection region; a current non-injection region formed on both sides of the ridge-like stripe; and at least part of the current non-injection region is made from a material expressed by a chemical formula AlxGa1−xN (0≦x≦1.0). In this device, the component ratio “x” of Al is specified at a value in a range of 0.3≦x≦1.0, so that the semiconductor laser light emitting device is configured as an index guide type semiconductor laser light emitting device; the component ratio “x” of Al is specified at a value in a range of 0.15<x<0.
    Type: Application
    Filed: March 23, 2001
    Publication date: January 10, 2002
    Inventors: Hiroshi Yoshida, Misuzu Abe, Maho Ohara, Takashi Yamaguchi, Hiroshi Nakajima