Patents by Inventor Misuzu SATO

Misuzu SATO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
    Publication number: 20220028739
    Abstract: A semiconductor device according to an embodiment includes: a barrier metal layer provided on a surface of an insulating layer; and a conductive layer having a first metal layer provided on a surface of the barrier metal layer, and a second metal layer provided on a surface of the first metal layer. The second metal layer includes an identical metal to metal of the first metal layer, and an impurity configured to remove fluorine bonded to the metal.
    Type: Application
    Filed: October 6, 2021
    Publication date: January 27, 2022
    Applicant: Kioxia Corporation
    Inventors: Satoshi WAKATSUKI, Tomohisa IINO, Naomi FUKUMAKI, Misuzu SATO, Masakatsu TAKEUCHI
  • SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
    Publication number: 20210082753
    Abstract: A semiconductor device according to an embodiment includes: a barrier metal layer provided on a surface of an insulating layer; and a conductive layer having a first metal layer provided on a surface of the barrier metal layer, and a second metal layer provided on a surface of the first metal layer. The second metal layer includes an identical metal to metal of the first metal layer, and an impurity configured to remove fluorine bonded to the metal.
    Type: Application
    Filed: March 10, 2020
    Publication date: March 18, 2021
    Applicant: Kioxia Corporation
    Inventors: Satoshi WAKATSUKI, Tomohisa IINO, Naomi FUKUMAKI, Misuzu SATO, Masakatsu TAKEUCHI
  • Film forming method and film forming apparatus
    Patent number: 9963784
    Abstract: A film forming method includes: forming a thin unit film on a target substrate by supplying processing gases sequentially and intermittently into a processing space, where the target substrate is placed, in a processing chamber of a film forming apparatus while purging the processing gases with a purge gas constantly supplied into the processing space; and repeating the forming of the thin unit film to form a film having a predetermined thickness on the target substrate. A flow rate of the purge gas supplied into the processing space is set such that the film is formed in a film forming mode in which the thin unit film is formed, irrespective of a pressure in the processing chamber.
    Type: Grant
    Filed: October 16, 2014
    Date of Patent: May 8, 2018
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Hiroaki Ashizawa, Misuzu Sato
  • FILM FORMING METHOD AND FILM FORMING APPARATUS
    Publication number: 20150110959
    Abstract: A film forming method includes: forming a thin unit film on a target substrate by supplying processing gases sequentially and intermittently into a processing space, where the target substrate is placed, in a processing chamber of a film forming apparatus while purging the processing gases with a purge gas constantly supplied into the processing space; and repeating the forming of the thin unit film to form a film having a predetermined thickness on the target substrate. A flow rate of the purge gas supplied into the processing space is set such that the film is formed in a film forming mode in which the thin unit film is formed, irrespective of a pressure in the processing chamber.
    Type: Application
    Filed: October 16, 2014
    Publication date: April 23, 2015
    Inventors: Hiroaki ASHIZAWA, Misuzu SATO