Patents by Inventor Mitch M. C. Chou
Mitch M. C. Chou has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9322781Abstract: A method for producing an optically stimulated luminescene (OSL) dosage detection crystal is disclosed, where an Al2O3 is first covered with carbon. The carbon atoms are diffused then in vacuum into the Al2O3 lattices. Then, the oxygen and carbon atoms react with each other in an anneal process under 1 atm. At this time, oxygen and the carbon atoms are enabled to react with each other, and thus C+O result in CO, or C+O2 form CO2, so that oxygen vacancy deficiencies are formed in the Al2O3 crystal. At this time, a uniformly carbon distributed crystal structure is thus simply obtained.Type: GrantFiled: December 23, 2014Date of Patent: April 26, 2016Inventor: Mitch M. C. Chou
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Publication number: 20150198530Abstract: A method for producing an optically stimulated luminescene (OSL) dosage detection crystal is disclosed, where an Al2O3 is first covered with carbon. The carbon atoms are diffused then in vacuum into the Al2O3 lattices. Then, the oxygen and carbon atoms react with each other in an anneal process under 1 atm. At this time, oxygen and the carbon atoms are enabled to react with each other, and thus C+O result in CO, or C+O2 form CO2, so that oxygen vacancy deficiencies are formed in the Al2O3 crystal. At this time, a uniformly carbon distributed crystal structure is thus simply obtained.Type: ApplicationFiled: December 23, 2014Publication date: July 16, 2015Inventor: Mitch M. C. Chou
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Publication number: 20150198726Abstract: An imbedded mobile detection device includes a radiation detector, comprising a detection crystal and a photo-sensitive element, a radiation detector, an analog-digital converter (ADC), and a software application unit, wherein the detection crystal is a C:Al2O3 crystal having oxygen vacancy deficiencies formed by subjecting a carbon covered Al2O3 structure to vacuum diffusion and atmosphere annealing, when any radioactive particle exists in an on-spot environment, an energy thereof is absorbed through a recombination process of the vacancy deficiencies. Finally, the radiation energy spectrum analysis information is obtained through a measurement, by which some environmental radiations and waste containing radioactive material emitted from some radiation plants may be measured and analyzed, achieving the efficacy of an online measurement result processing and providing an accurate nuclide determination.Type: ApplicationFiled: December 22, 2014Publication date: July 16, 2015Inventor: Mitch M. C. Chou
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Patent number: 8158948Abstract: A detector using scintillating crystals is provided. The scintillating crystal is based on cerium doped lutetium yttrium orthosilicate (Ce:LYSO). With calcium (Ca) doped into Ce:LYSO, the electrovalence of Ce is further uniformly distributed. The scintillating crystal obtains high stability with 2 to 10 times greater electrical degree than that of a general scintillating crystal. Thus, radiative induction to cancer cells is improved and distribution of the cancer cells is easily figured out.Type: GrantFiled: November 9, 2010Date of Patent: April 17, 2012Inventor: Mitch M. C. Chou
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Publication number: 20110204240Abstract: A detector using scintillating crystals is provided. The scintillating crystal is based on cerium doped lutetium yttrium orthosilicate (Ce:LYSO). With calcium (Ca) doped into Ce:LYSO, the electrovalence of Ce is further uniformly distributed. The scintillating crystal obtains high stability with 2 to 10 times greater electrical degree than that of a general scintillating crystal. Thus, radiative induction to cancer cells is improved and distribution of the cancer cells is easily figured out.Type: ApplicationFiled: November 9, 2010Publication date: August 25, 2011Inventor: Mitch M. C. Chou
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Patent number: 7868535Abstract: The present invention is a light emitting device which uses a specific phosphor powder. The phosphor powder is a combination of cerium (Ce) and lithium aluminum oxide (LiAlO2). They are mixed under a specific range of composition ratio. With the specific phosphor powder applied, the light emitting device has advantages in a low cost, a reduced power consumption, an easy production, a long life, and so on. In addition, a transformation efficiency of the phosphor powder is high and so a light emitting efficiency of the light emitting device is enhanced.Type: GrantFiled: June 12, 2007Date of Patent: January 11, 2011Assignees: National Sun Yat-Sen University, Sino American Silicon Products Inc.Inventors: Mitch M. C. Chou, Wen-Ching Hsu, Cheng-Hung Wei
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Patent number: 7863164Abstract: A thick gallium nitride (GaN) film is formed on a LiAlO2 substrate through two stages. First, GaN nanorods are formed on the LiAlO2 substrate through chemical vapor deposition (CVD). Then the thick GaN film is formed through hydride vapor phase epitaxy (HVPE) by using the GaN nanorods as nucleus sites. In this way, a quantum confined stark effect (QCSE) becomes small and a problem of spreading lithium element into gaps in GaN on using the LiAlO2 substrate is mended.Type: GrantFiled: June 13, 2007Date of Patent: January 4, 2011Assignees: Natioal Sun Yat-Sen University, Sino American Silicon Products Inc.Inventors: Mitch M. C. Chou, Wen-Ching Hsu
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Patent number: 7812526Abstract: A lithium aluminum oxide (LiAlO2) substrate suitable for a zinc oxide (ZnO) buffer layer is found. The ZnO buffer layer is grown on the LiAlO2 substrate. Because the LiAlO2 substrate has a similar structure to that of the ZnO buffer layer, a quantum confined stark effect (QCSE) is effectively eliminated. And a photoelectrical device made with the present invention, like a light emitting diode, a piezoelectric material or a laser diode, thus obtains an enhanced light emitting efficiency.Type: GrantFiled: June 11, 2007Date of Patent: October 12, 2010Assignee: National Sun Yat-sen UniversityInventors: Mitch M. C. Chou, Jih-Jen Wu, Wen-Ching Hsu
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Publication number: 20100248461Abstract: A thick gallium nitride (GaN) film is formed on a LiAlO2 substrate through two stages. First, GaN nanorods are formed on the LiAlO2 substrate through chemical vapor deposition (CVD). Then the thick GaN film is formed through hydride vapor phase epitaxy (HVPE) by using the GaN nanorods as nucleus sites. In this way, a quantum confined stark effect (QCSE) becomes small and a problem of spreading lithium element into gaps in GaN on using the LiAlO2 substrate is mended.Type: ApplicationFiled: June 13, 2007Publication date: September 30, 2010Applicants: National Sun Yat-sen University, Sino American Silicon Prouducts Inc.Inventors: Mitch M. C. Chou, Wen-Ching Hsu
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Patent number: 7576372Abstract: A method for making a free-standing, single crystal, aluminum gallium nitride (AlGaN) wafer includes forming a single crystal AlGaN layer directly on a single crystal LiAlO2 substrate using an aluminum halide reactant gas, a gallium halide reactant gas, and removing the single crystal LiAlO2 substrate from the single crystal AlGaN layer to make the free-standing, single crystal AlGaN wafer. Forming the single crystal AlGaN layer may comprise depositing AlGaN by vapor phase epitaxy (VPE) using aluminum and gallium halide reactant gases and a nitrogen-containing reactant gas. The growth of the AlGaN layer using VPE provides commercially acceptable rapid growth rates. In addition, the AlGaN layer can be devoid of carbon throughout. Because the AlGaN layer produced is high quality single crystal, it may have a defect density of less than about 107cm?2.Type: GrantFiled: January 26, 2007Date of Patent: August 18, 2009Assignee: Crystal Photonics, IncorporatedInventors: Herbert Paul Maruska, John Joseph Gallagher, Mitch M. C. Chou, David W. Hill
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Publication number: 20080231172Abstract: The present invention is a light emitting device which uses a specific phosphor powder. The phosphor powder is a combination of cerium (Ce) and lithium aluminum oxide (LiAlO2). They are mixed under a specific range of composition ratio. With the specific phosphor powder applied, the light emitting device has advantages in a low cost, a reduced power consumption, an easy production, a long life, and so on. In addition, a transformation efficiency of the phosphor powder is high and so a light emitting efficiency of the light emitting device is enhanced.Type: ApplicationFiled: June 12, 2007Publication date: September 25, 2008Applicants: National Sun Yat-sen University, Sino American Silicon Products Inc.Inventors: Mitch M. C. Chou, Wen-Ching Hsu, Cheng-Hung Wei
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Publication number: 20080233671Abstract: A light emitting diode (LED) is made. The LED had a LiAlO2 substrate and a GaN layer. Between them, there is a zinc oxide (ZnO) layer. Because GaN and ZnO have a similar. Wurtzite structure, GaN can easily grow on ZnO. By using the ZnO layer, the GaN layer is successfully grown as a single crystal thin film on the LiAlO2 substrate. Thus, GaN defect density is reduced and lattice match is obtained to have a good crystal interface quality and an enhanced light emitting efficiency of a device thus made.Type: ApplicationFiled: June 11, 2007Publication date: September 25, 2008Applicants: National Sun Yat-sen University, Sino American Silicon Products Inc.Inventors: Mitch M. C. Chou, Jih-Jen Wu, Wen-Ching Hsu
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Publication number: 20080233415Abstract: A lithium aluminum oxide (LiAlO2) substrate suitable for a zinc oxide (ZnO) buffer layer is found. The ZnO buffer layer is grown on the LiAlO2 substrate. Because the LiAlO2 substrate has a similar structure to that of the ZnO buffer layer, a quantum confined stark effect (QCSE) is effectively eliminated. And a photoelectrical device made with the present invention, like a light emitting diode, a piezoelectric material or a laser diode, thus obtains an enhanced light emitting efficiency.Type: ApplicationFiled: June 11, 2007Publication date: September 25, 2008Applicants: National Sun Yat-sen University, Sino American Silicon Products Inc.Inventors: Mitch M. C. Chou, Jih-Jen Wu, Wen-Ching Hsu
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Publication number: 20070289947Abstract: The present invention polishes a lithium aluminum oxide (LiAlo2) crystal several times with three different materials and then the LiAlo2 crystal are soaked into an acid solution to be washed for obtaining a LiAlo2 crystal of film-free, scratch-free with smooth surface.Type: ApplicationFiled: June 16, 2006Publication date: December 20, 2007Applicants: National Sun Yat-sen University, Sino American Silicon Products Inc.Inventors: Mitch M. C. Chou, Wen-Ching Hsu, Chi-Tse Lee, Sin-Jie Huang
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Patent number: 7169227Abstract: A method for making a free-standing, single crystal, aluminum gallium nitride (AlGaN) wafer includes forming a single crystal AlGaN layer directly on a single crystal LiAlO2 substrate using an aluminum halide reactant gas, a gallium halide reactant gas, and removing the single crystal LiAlO2 substrate from the single crystal AlGaN layer to make the free-standing, single crystal AlGaN wafer. Forming the single crystal AlGaN layer may comprise depositing AlGaN by vapor phase epitaxy (VPE) using aluminum and gallium halide reactant gases and a nitrogen-containing reactant gas. The growth of the AlGaN layer using VPE provides commercially acceptable rapid growth rates. In addition, the AlGaN layer can be devoid of carbon throughout. Because the AlGaN layer produced is high quality single crystal, it may have a defect density of less than about 107 cm?2.Type: GrantFiled: March 25, 2003Date of Patent: January 30, 2007Assignee: Crystal Photonics, IncorporatedInventors: Herbert Paul Maruska, John Joseph Gallagher, Mitch M. C. Chou, David W. Hill
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Patent number: 6648966Abstract: A method for making a free-standing, single crystal, gallium nitride (GaN) wafer includes forming a single crystal GaN layer directly on a single crystal LiAlO2 substrate using a gallium halide reactant gas, and removing the single crystal LiAlO2 substrate from the single crystal GaN layer to make the free-standing, single crystal GaN wafer. Forming the single crystal GaN layer may comprise depositing GaN by vapor phase epitaxy (VPE) using the gallium halide reactant gas and a nitrogen-containing reactant gas. Because gallium halide is used as a reactant gas rather than a metal organic reactant such as trimethygallium (TMG), the growth of the GaN layer can be performed using VPE which provides commercially acceptable rapid growth rates. In addition, the GaN layer is also devoid of carbon throughout. Because the GaN layer produced is high quality single crystal, it may have a defect density of less than about 107 cm−2.Type: GrantFiled: August 1, 2001Date of Patent: November 18, 2003Assignee: Crystal Photonics, IncorporatedInventors: Herbert Paul Maruska, John Joseph Gallagher, Mitch M. C. Chou
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Publication number: 20030183158Abstract: A method for making a free-standing, single crystal, aluminum gallium nitride (AlGaN) wafer includes forming a single crystal AlGaN layer directly on a single crystal LiAlO2 substrate using an aluminum halide reactant gas, a gallium halide reactant gas, and removing the single crystal LiAlO2 substrate from the single crystal AlGaN layer to make the free-standing, single crystal AlGaN wafer. Forming the single crystal AlGaN layer may comprise depositing AlGaN by vapor phase epitaxy (VPE) using aluminum and gallium halide reactant gases and a nitrogen-containing reactant gas. The growth of the AlGaN layer using VPE provides commercially acceptable rapid growth rates. In addition, the AlGaN layer can be devoid of carbon throughout. Because the AlGaN layer produced is high quality single crystal, it may have a defect density of less than about 107 cm−2.Type: ApplicationFiled: March 25, 2003Publication date: October 2, 2003Applicant: Crystal Photonics, IncorporatedInventors: Herbert Paul Maruska, John Joseph Gallagher, Mitch M.C. Chou, David W. Hill
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Publication number: 20030024472Abstract: A method for making a free-standing, single crystal, gallium nitride (GaN) wafer includes forming a single crystal GaN layer directly on a single crystal LiAlO2 substrate using a gallium halide reactant gas, and removing the single crystal LiAlO2 substrate from the single crystal GaN layer to make the free-standing, single crystal GaN wafer. Forming the single crystal GaN layer may comprise depositing GaN by vapor phase epitaxy (VPE) using the gallium halide reactant gas and a nitrogen-containing reactant gas. Because gallium halide is used as a reactant gas rather than a metal organic reactant such as trimethygallium (TMG), the growth of the GaN layer can be performed using VPE which provides commercially acceptable rapid growth rates. In addition, the GaN layer is also devoid of carbon throughout. Because the GaN layer produced is high quality single crystal, it may have a defect density of less than about 107 cm−2.Type: ApplicationFiled: August 1, 2001Publication date: February 6, 2003Applicant: CRYSTAL PHOTONICS, INCORPORATEDInventors: Herbert Paul Maruska, John Joseph Gallagher, Mitch M.C. Chou
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Patent number: 6455986Abstract: An electronic device includes a piezoelectric layer formed of an ordered Langasite structure compound having the formula A3BC3D2E14 wherein A is strontium, B is niobium, C is gallium, D is silicon, and E is oxygen. At least one electrode is connected to the piezoelectric layer and may be configured to define a device, such as a SAW resonator or filter, or a BAW resonator or filter. The ordered Langasite structure compound may have a substantially perfectly ordered structure.Type: GrantFiled: May 3, 2001Date of Patent: September 24, 2002Assignee: Crystal Photonics, IncorporatedInventors: Bruce H. T. Chai, Mitch M. C. Chou, Haihong Qiu, Shen Jen
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Patent number: 6424081Abstract: An electronic device includes a piezoelectric layer formed of an ordered Langasite structure compound having the formula A3BC3D2E14, wherein A is calcium, B is niobium or tantalum, C is gallium, D is silicon, and E is oxygen. At least one electrode is connected to the piezoelectric layer and may be configured to define a device, such as a SAW resonator or filter, or a BAW resonator or filter. The ordered Langasite structure compound may have a substantially perfectly ordered structure.Type: GrantFiled: May 3, 2001Date of Patent: July 23, 2002Assignee: Crystal Photonics, IncorporatedInventors: Bruce H. T. Chai, Mitch M. C. Chou, Haihong Qiu, Shen Jen