Abstract: A high-precision alignment pattern for fine-line device fabrication comprises unique marks. The pattern is utilized to align a mask or reticle with respect to a wafer and/or to evaluate actual level-to-level registration achieved between a set of masks or reticles and a wafer. One mark of the pattern comprises two spaced-apart parallel lines. The other mark comprises a notch or arrow-head including an apex portion. In practice, the orientation between the apex portion and the associated parallel lines of the pattern can be read relatively easily with high accuracy.