Patents by Inventor Mitchell E. Doty

Mitchell E. Doty has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 4836012
    Abstract: A gas sensor comprises a photovoltaic cell which, upon exposure to light, develops a photovoltage or photocurrent which varies as a function of the type of gas sorbed. The cell includes in order a conductor, an N-type light-absorbing semiconductor, and a thin light-transmitting gas-absorbing metal Schottky layer having electrical properties which vary with the type of gas sorbed therein.
    Type: Grant
    Filed: May 26, 1988
    Date of Patent: June 6, 1989
    Assignee: Ametek, Inc.
    Inventors: Mitchell E. Doty, Ferenc J. Schmidt
  • Patent number: 4689247
    Abstract: Process and apparatus are disclosed for forming excellent quality, large area thin films essentially without discontinuities and inhomogenuities, particularly for photovoltaic solar cells. The reactants are conducted past a heated substrate in a relatively thin gap, e.g., 0.030 inch, in a turbulent flow. In a specific embodiment, the reactants are contained in nebuli of an atomized solution, and the nebuli are sorted, preferably by gravity, prior to introduction thereof into the gap to prevent introduction of larger size nebuli into the reaction gap.
    Type: Grant
    Filed: May 15, 1986
    Date of Patent: August 25, 1987
    Assignee: Ametek, Inc.
    Inventors: Mitchell E. Doty, Thom V. Bernitsky
  • Patent number: 4345107
    Abstract: Photovoltaic cell comprises thin film cadmium telluride in ohmic contact with a conductive substrate, preferbaly comprising a cadmium surface, through a cadmium-rich layer at the interface with the substrate. The cell further includes a rectifying barrier layer which may be a Schottky barrier. The film is electrodeposited on the substrate surface and the substrate materials and electrodeposition conditions are controlled so as to produce a substantially stoichiometric deposit. Preferably, the film or cell is subsequently treated to enhance its efficiency.
    Type: Grant
    Filed: December 15, 1980
    Date of Patent: August 17, 1982
    Assignee: Ametek, Inc.
    Inventors: Gabor F. Fulop, Jacob F. Betz, Peter V. Meyers, Mitchell E. Doty
  • Patent number: 4261802
    Abstract: Photovoltaic cell comprises thin film cadmium telluride in ohmic contact with a smooth conductive substrate, preferably comprising a cadmium surface, through a cadmium-rich layer at the interface with the substrate, the cell further including a rectifying barrier layer. Preferably, the film is electrodeposited on the substrate surface with specific materials and process conditions. Preferably also, the film or cell is subsequently treated to enhance its barrier layer interface function.
    Type: Grant
    Filed: February 21, 1980
    Date of Patent: April 14, 1981
    Assignee: Ametek, Inc.
    Inventors: Gabor F. Fulop, Jacob F. Betz, Peter V. Meyers, Mitchell E. Doty
  • Patent number: 4260427
    Abstract: Photovoltaic cell comprises thin film cadmium telluride in ohmic contact with a smooth conductive substrate, preferably comprising a cadmium surface, through a cadmium-rich layer at the interface with the substrate, the cell further including a rectifying barrier layer. Preferably, the film is electrodeposited on the substrate surface with specific materials and process conditions. Preferably also, the film or cell is subsequently treated to enhance its barrier layer interface function.
    Type: Grant
    Filed: June 18, 1979
    Date of Patent: April 7, 1981
    Assignee: Ametek, Inc.
    Inventors: Gabor F. Fulop, Jacob F. Betz, Peter V. Meyers, Mitchell E. Doty