Abstract: Improved messaging systems are disclosed. Embodiments allow message producers to access or create producer reservations in a queue coordination data store corresponding to a campaign. The producer reservations reflect a workload and a campaign aspect. A message producer can apply a usage strategy in resource selection which may optimize selection of queueing resources considering existing work volume for those message queues or aspects of the campaign. Message consumers may select message queues from which to consume messages using data in the queue coordination data store. A message consumer may apply a usage strategy in resource selection which may optimize selection of queueing resources considering existing work volume for those message queues or aspects of the campaign.

Abstract: Notification systems and methods that combine the generation and delivery of notifications with the ability to dynamically select or render content for those notifications are disclosed. The selection of what content to include in such notifications, or the rendering of such content, may be performed at or after a time of the delivery of the notifications to users.

Abstract: A subscriber management system and method are described, according to various implementations. In an implementation, the method and system generate a unique user device identifier that is stored and accessed in storage on a user device. The user device identifier is passed in network requests when visiting a website having an installation of a module of the subscriber management system.

Abstract: Systems and methods for fraud detection in notification systems and networks are disclosed. These systems and methods are adapted to determine if users in a notification network undesirable automated users and prevent notifications from being sent to such users.

Abstract: Notification systems and methods that combine the generation and delivery of notifications with the ability to dynamically select or render content for those notifications are disclosed. The selection of what content to include in such notifications, or the rendering of such content, may be performed at or after a time of the delivery of the notifications to users.

Abstract: Improved messaging systems are disclosed. Embodiments allow message producers to access or create producer reservations in a queue coordination data store corresponding to a campaign. The producer reservations reflect a workload and a campaign aspect. A message producer can apply a usage strategy in resource selection which may optimize selection of queueing resources considering existing work volume for those message queues or aspects of the campaign. Message consumers may select message queues from which to consume messages using data in the queue coordination data store. A message consumer may apply a usage strategy in resource selection which may optimize selection of queueing resources considering existing work volume for those message queues of aspects of the campaign.

Abstract: Systems and methods for dynamic online signaling are disclosed. Embodiments of these systems and methods may determine when a user is online or when a user is otherwise performing certain activities and dynamically signal an interested entity based on the user's activity.

Abstract: A subscriber management system and method are described, according to various implementations. In an implementation, the method and system generates a unique user device identifier that is stored and accessed in storage on a user device. The user device identifier is passed in network requests when visiting a website having an installation of a module of the subscriber management system.

Abstract: A subscriber management system and method are described, according to various implementations. In an implementation, the method and system generates a unique user device identifier that is stored and accessed in storage on a user device. The user device identifier is passed in network requests when visiting a website having an installation of a module of the subscriber management system.

Abstract: A subscriber management system and method are described, according to various implementations. In an implementation, the method and system generates a unique user device identifier that is stored and accessed in storage on a user device. The user device identifier is passed in network requests when visiting a website having an installation of a module of the subscriber management system.

Abstract: Complementary metal oxide semiconductor metal gate transistors may be formed by depositing a metal layer in trenches formerly inhabited by patterned gate structures. The patterned gate structures may have been formed of polysilicon in one embodiment. The metal layer may have a workfunction most suitable for forming one type of transistor, but is used to form both the n and p-type transistors. The workfunction of the metal layer may be converted, for example, by ion implantation to make it more suitable for use in forming transistors of the opposite type.

Abstract: Complementary metal oxide semiconductor metal gate transistors may be formed by depositing a metal layer in trenches formerly inhabited by patterned gate structures. The patterned gate structures may have been formed of polysilicon in one embodiment. The metal layer may have a workfunction most suitable for forming one type of transistor, but is used to form both the n and p-type transistors. The workfunction of the metal layer may be converted, for example, by ion implantation to make it more suitable for use in forming transistors of the opposite type.

Abstract: A transistor device having a conformal depth of impurities implanted by isotropic ion implantation into etched junction recesses. For example, a conformal depth of arsenic impurities and/or carbon impurities may be implanted by plasma immersion ion implantation in junction recesses to reduce boron diffusion and current leakage from boron doped junction region material deposited in the junction recesses. This may be accomplished by removing, such as by etching, portions of a substrate adjacent to a gate electrode to form junction recesses. The junction recesses may then be conformally implanted with a depth of arsenic and carbon impurities using plasma immersion ion implantation. After impurity implantation, boron doped silicon germanium can be formed in the junction recesses.

Abstract: Numerous embodiments of a method and apparatus for laser annealing are disclosed. In one embodiment, a method of laser annealing includes performing one or more annealing processes on one or more portions of a semiconductor device, where one or more annealing processes performed on one or more portions of the semiconductor device are varied based at least in part on the particular portion of the semiconductor device being annealed, and/or on one or more desirable characteristics of the particular portion of the semiconductor device being annealed.

Abstract: A transistor device having a conformal depth of impurities implanted by isotropic ion implantation into etched junction recesses. For example, a conformal depth of arsenic impurities and/or carbon impurities may be implanted by plasma immersion ion implantation in junction recesses to reduce boron diffusion and current leakage from boron doped junction region material deposited in the junction recesses. This may be accomplished by removing, such as by etching, portions of a substrate adjacent to a gate electrode to form junction recesses. The junction recesses may then be conformally implanted with a depth of arsenic and carbon impurities using plasma immersion ion implantation. After impurity implantation, boron doped silicon germanium can be formed in the junction recesses.

Abstract: The use of a carbon implant, in addition to the conventional fluorine implant, may significantly reduce the transient enhanced diffusion in P-type source drain extension regions. As a result, resistivity may be reduced, and dopant density may be increased, increasing current drive in some embodiments.

Abstract: Complementary metal oxide semiconductor metal gate transistors may be formed by depositing a metal layer in trenches formerly inhabited by patterned gate structures. The patterned gate structures may have been formed of polysilicon in one embodiment. The metal layer may have a workfunction most suitable for forming one type of transistor, but is used to form both the n and p-type transistors. The workfunction of the metal layer may be converted, for example, by ion implantation to make it more suitable for use in forming transistors of the opposite type.

Abstract: The use of a carbon implant, in addition to the conventional fluorine implant, may significantly reduce the transient enhanced diffusion in P-type source drain extension regions. As a result, resistivity may be reduced, and dopant density may be increased, increasing current drive in some embodiments.

Abstract: A polysilicon structure may be defined on a semiconductor substrate using plasma doping to dope the sidewalls and upper surface of the polysilicon material as well as the source drain extensions. Shortly after plasma doping, the structure may be encapsulated within a suitable capping layer to prevent the removal of the thin surface doped regions during subsequent semiconductor processing.

Abstract: A polysilicon structure may be defined on a semiconductor substrate using plasma doping to dope the sidewalls and upper surface of the polysilicon material as well as the source drain extensions. Shortly after plasma doping, the structure may be encapsulated within a suitable capping layer to prevent the removal of the thin surface doped regions during subsequent semiconductor processing.