Abstract: A method of conducting an in situ reliability test on a cross-section of a device with layered structure at micron-scale and at least two electrodes. The method includes steps of locating an electron transparent cross-sectional portion of the device in a holder and transmitting a direct current bias voltage to the cross-sectional portion of the device through at least two electrodes of the device, and observing and quantifying the microstructural changes of the device cross-section on the holder. A system for conducting an in situ reliability test on a device with a layered structure at a micron-scale and at least two electrodes is also provided.

Abstract: A method of conducting an in situ reliability test on a cross-section of a device with layered structure at micron-scale and at least two electrodes. The method includes steps of locating an electron transparent cross-sectional portion of the device in a holder and transmitting a direct current bias voltage to the cross-sectional portion of the device through at least two electrodes of the device, and observing and quantifying the microstructural changes of the device cross-section on the holder. A system for conducting an in situ reliability test on a device with a layered structure at a micron-scale and at least two electrodes is also provided.

Abstract: A manipulating device for manipulating sample objects having dimensions between about 10 nm and 10,000 nm. The device is attached to a top plate of a microscope, wherein the top plate moves along a Z-axis. The device further has first and second arms attachable to said top plate, wherein when attached the first and second are positioned relative to one another to grasp a sample object. The first and second arms are adapted to move along an X-axis and a Y-axis. The device further has a controller adapted to control movement of the first and second arms.