Abstract: A vacuum processing apparatus includes a decompressable process container; a supply port configured to supply, to the process container, an ionic liquid that absorbs an oxidizing gas; and a discharge port configured to discharge the ionic liquid supplied to the process container. A recess is provided at a joint portion between members constituting the process container. The supply port is configured to supply the ionic liquid to the recess, and the discharge port is configured to discharge the ionic liquid supplied to the recess.

Abstract: An image sensor includes a plurality of pixels. Each pixel includes a photoelectric conversion portion, a reset gate for controlling removal of a charge accumulated in the photoelectric conversion portion, a charge accumulation portion, an accumulation gate for controlling a transfer of the charge from the photoelectric conversion portion to the charge accumulation portion, and a readout gate for controlling readout of the charge from the charge accumulation portion. The reset gate removes the charge generated in the photoelectric conversion portion by excitation light. The accumulation gate transfers the charge generated in the photoelectric conversion portion by fluorescence to the charge accumulation portion. The readout gate performs control for reading out the charge after the charge transfer is performed n times. The number n of the charge transfers is set for each pixel.

Abstract: A technique advantageous for shortening time required for electroless plating that is performed on a substrate is provided. A substrate liquid processing apparatus includes a substrate holder configured to hold the substrate; a reaction acceleration unit, configured to accelerate a plating reaction of an unused electroless plating solution, including an activation unit configured to accelerate the electroless plating solution with respect to the plating reaction and a reaction heater configured to heat the electroless plating solution; and a plating solution supply configured to supply the electroless plating solution to the substrate held by the substrate holder.

Abstract: A substrate processing method includes: preparing a substrate having a metal film exposed on a surface of the substrate; and forming a film of an ionic self-association material on a surface of the metal film by supplying the ionic self-association material to the surface of the substrate, the ionic self-association material having fluidity with a hydrophilic group and a hydrophobic group.

Abstract: A substrate processing method includes forming a film of an ionic liquid on a surface of a substrate, on which a pattern is formed, by supplying the ionic liquid to the surface of the substrate, wherein the ionic liquid has a cation containing a hydrocarbon chain having six or more carbon atoms, and wherein at least one hydrogen atom in the hydrocarbon chain is substituted with a fluorine atom.

Abstract: In a method of manufacturing a semiconductor device, the method includes: applying a liquid material containing an ionic liquid on a substrate to form a protective film; transferring at an atmosphere the substrate on which the protective film is formed; and removing the protective film from the substrate that has been transferred at the atmosphere.

Abstract: An electrocaloric effect element includes a container having a first wall and a second wall, the second wall facing the first wall, ionic liquid accommodated in the container, a first electrode provided at an outer surface of the first wall, and a movable electrode provided in the ionic liquid such that the movable electrode is movable in the ionic liquid.

Abstract: A purification processing apparatus for supplying purified isopropyl alcohol to a substrate processing apparatus. The purification processing apparatus includes: a processing chamber in which unpurified isopropyl alcohol and ionic liquid are mixed, and the isopropyl alcohol and the ionic liquid are separated to purify the isopropyl alcohol; an unpurified solvent supply port configured to supply the unpurified isopropyl alcohol to the processing chamber; an ionic liquid supply port configured to supply the ionic liquid to the processing chamber; and a purified solvent outlet configured to supply the purified isopropyl alcohol from the processing chamber to the substrate processing apparatus.

Abstract: A technique of improving an adhesion between a metal precipitated in a recess of a substrate and a surface partitioning the recess in an electroless plating processing in which a plated metal is deposited from the bottom of the recess is provided. A substrate liquid processing method includes preparing a substrate including a recess and a wiring exposed at a bottom of the recess; forming a self-assembled monolayer on a side wall of the recess; attaching an intermolecular binder, which is allowed to be bonded to both a metal and the self-assembled monolayer, to the self-assembled monolayer; and burying, by supplying an electroless plating solution to the recess in a state where the intermolecular binder is attached to the self-assembled monolayer to precipitate the metal in the recess, the metal in the recess while bringing the metal into close contact with the intermolecular binder.

Abstract: According to one aspect of the present disclosure, a vacuum processing apparatus includes: a decompressable process container; a supply port that is formed on a side wall of the process container and that is configured to supply, to the process container, an ionic liquid that absorbs an oxidizing gas; and a discharge port configured to discharge the ionic liquid supplied to the process container.

Abstract: A substrate having a recess, a diffusion barrier layer defining the recess, and a wiring exposed at a bottom of the recess is prepared. A metal ion, having a concentration not causing precipitation of a metal even when an electroless plating liquid comes into contact therewith, is attached to the diffusion barrier layer. The metal is precipitated in the recess by supplying the electroless plating liquid into the recess in a state that the metal ion is attached to the diffusion barrier layer.

Abstract: A substrate processing apparatus includes a liquid processing module, provided with a carry-out/in opening of a substrate, including therein a first liquid processing device and a second liquid processing device; a module-outside transfer device configured to carry the substrate out from and into the liquid processing module; and a module-inside transfer device configured to transfer the substrate between the first liquid processing device and the second liquid processing device. The first liquid processing device is equipped with a first holder configured to hold the substrate. The second liquid processing device is equipped with a second holder configured to hold the substrate. The second liquid processing device is configured to perform a plating processing on the substrate held by the second holder. The first liquid processing device is configured to perform at least a post-cleaning processing performed after the plating processing on the substrate held by the first holder.

Abstract: A substrate processing apparatus includes a rotation driving mechanism configured to rotate a rotary table configured to hold a substrate; an electric heater provided in the rotary table to be rotated along with the rotary table and configured to heat the substrate; a power receiving electrode provided in the rotary table to be rotated along with the rotary table and electrically connected to the electric heater; a power feeding electrode configured to be contacted with the power receiving electrode and configured to supply a power to the electric heater via the power receiving electrode; an electrode moving mechanism; a power feeder configured to supply the power to the power feeding electrode; a processing cup surrounding the rotary table; at least one processing liquid nozzle configured to supply a processing liquid; a processing liquid supply mechanism configured to supply at least an electroless plating liquid; and a controller.

Abstract: A multilayer wiring forming method includes forming, in a via 70 formed at a preset position in an insulating film 60 provided on a wiring 50 of a substrate, the via 70 being extended to the wiring 70, a monomolecular film 80 on a bottom surface 73 at which the wiring 50 is exposed; forming a barrier film 81 on a side surface 72 of the via 70; removing the monomolecular film 80; and forming an electroless plating film 82 from the bottom surface 73 of the via 70 by using the wiring 50 exposed at the bottom surface 73 of the via 70 as the catalyst.

Abstract: A method includes a step of performing a selective catalyst treatment by supplying a catalyst solution to an upper surface of an exposed interconnection layer forming a step portion of a stepped shape formed by pair layers stacked to form the stepped shape, the pair layer including an interconnection layer formed on an insulating layer, and a step of selectively growing a metal layer by performing electroless plating on the upper surface of the interconnection layer on which the catalyst treatment is performed.

Abstract: On a surface of a substrate having a plateable material portion and a non-plateable material portion, a polymer compound, which selectively reacts with an OH end group of the non-plateable material portion, is supplied. By performing a catalyst imparting processing on the substrate on which the polymer compound is supplied, a catalyst is selectively imparted to the plateable material portion. Further, by performing a plating processing on the substrate, a plating layer is selectively formed on the plateable material portion. Before or after forming the plating layer, the polymer compound on the substrate is removed.

Abstract: A catalyst is imparted selectively to a plateable material portion 32 by performing a catalyst imparting processing on a substrate W having a non-plateable material portion 31 and the plateable material portion 32 formed on a surface thereof. Then, a hard mask layer 35 is formed selectively on the plateable material portion 32 by performing a plating processing on the substrate W. The non-plateable material portion 31 is made of SiO2 as a main component, and the plateable material portion 32 is made of a material including, as a main component, a material containing at least one of a OCHx group and a NHx group, a metal material containing Si as a main component, a material containing carbon as a main component or a catalyst metal material.

Abstract: A multilayer wiring forming method includes filling a via, which is formed in an insulating film including an oxide film formed on a wiring of a substrate and is extended to the wiring, by forming an electroless plating film, which does not diffuse into the oxide film, from a bottom surface of the via while using the wiring, which is exposed at the bottom surface of the via, as a catalyst.

Abstract: A method includes a step of performing a selective catalyst treatment by supplying a catalyst solution to an upper surface of an exposed interconnection layer forming a step portion of a stepped shape formed by pair layers stacked to form the stepped shape, the pair layer including an interconnection layer formed on an insulating layer, and a step of selectively growing a metal layer by performing electroless plating on the upper surface of the interconnection layer on which the catalyst treatment is performed.

Abstract: A catalyst is imparted selectively to a plateable material portion 32 by performing a catalyst imparting processing on a substrate W having a non-plateable material portion 31 and the plateable material portion 32 formed on a surface thereof. Then, a hard mask layer 35 is formed selectively on the plateable material portion 32 by performing a plating processing on the substrate W. The non-plateable material portion 31 is made of SiO2 as a main component, and the plateable material portion 32 is made of a material including, as a main component, a material containing at least one of a OCHx group and a NHx group, a metal material containing Si as a main component, a material containing carbon as a main component or a catalyst metal material.