Patents by Inventor Mitsuaki Kabasawa
Mitsuaki Kabasawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7138641Abstract: A beam deflector for scanning performs deflecting of a charged particle beam having a regular trajectory in a vacuum space to thereby periodically change the trajectory of the charged particle beam. The beam deflector comprises a pair of deflection electrodes disposed so as to confront each inner electrode surface having a symmetrical concave extending in a direction of a beam trajectory.Type: GrantFiled: May 31, 2005Date of Patent: November 21, 2006Assignee: Sumitomo Eaton Nova CorporationInventors: Hiroshi Matsushita, Mitsuaki Kabasawa, Yoshitaka Amano, Yasuhiko Kimura, Mitsukuni Tsukihara, Junichi Murakami
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Publication number: 20060113491Abstract: A beam space-charge compensation device is applied to an angular energy filter provided in an ion beam processing system that performs processing by irradiating onto a wafer with an ion beam. The beam space-charge compensation device comprises a plasma shower provided in a beam-guiding chamber of the angular energy filter. The plasma shower comprises an arc chamber having a filament for generating thermo-electrons for plasma. The arc chamber comprises an extraction hole for extracting the thermo-electrons. The plasma shower is arranged such that the extraction hole is located on lines of magnetic force, perpendicular to an ion beam advancing direction, of the magnetic field and that a center axis of the filament and a center axis of said extraction hole coincide with the lines of magnetic force, perpendicular to the ion beam advancing direction, of the magnetic field.Type: ApplicationFiled: June 13, 2005Publication date: June 1, 2006Inventors: Hiroshi Kawaguchi, Takanori Yagita, Takashi Nishi, Junichi Murakami, Mitsukuni Tsukihara, Mitsuaki Kabasawa
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Publication number: 20060113466Abstract: An irradiation system comprises a beam generation source, a mass analysis device, a beam transformer, a deflector for scanning which swings the beam reciprocally, a beam parallelizing device, an acceleration/deceleration device, and an energy filtering device. According to this invention, a hybrid angular energy filter generating both electric and magnetic fields to bend trajectories is provided as the energy filtering device. A pair of multi-surface energy slit units each having a plurality of energy slits that are switchable therebetween depending on an ion species for irradiation are further provided on a downstream side of the hybrid angular energy filter. It is possible to selectively irradiate a target wafer with high-current beams from low energy to high energy in the conditions where contamination such as neutral particles, different kinds of dopants, ions with different energies, metal, and dust particles is extremely small in amount.Type: ApplicationFiled: August 12, 2005Publication date: June 1, 2006Inventors: Mitsuaki Kabasawa, Mitsukuni Tsukihara, Hiroshi Sogabe
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Publication number: 20060113467Abstract: In an irradiation system with an ion beam/charged particle beam having an energy filter, the energy filter is formed by deflection electrodes and a deflection magnet which can be switchingly used. The deflection magnet has a general window-frame shape and is formed with a hollow portion at its center. The deflection electrodes are installed, along with suppression electrodes, in a vacuum chamber arranged in the hollow portion of the deflection magnet. The deflection electrodes are installed with respect to the deflection magnet such that a deflection trajectory of a beam caused by a magnetic field and a deflection trajectory of a beam caused by an electric field overlap each other. Since the deflection electrodes and the deflection magnet can be switchingly used, the system can deal with a wider range of beam conditions and thus is widely usable.Type: ApplicationFiled: August 12, 2005Publication date: June 1, 2006Inventors: Takanori Yagita, Takashi Nishi, Michiro Sugitani, Junichi Murakami, Mitsukuni Tsukihara, Mitsuaki Kabasawa, Masaki Ishikawa, Tetsuya Kudo
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Publication number: 20060113490Abstract: A beam deflector for scanning performs deflecting of a charged particle beam having a regular trajectory in a vacuum space to thereby periodically change the trajectory of the charged particle beam. The beam deflector comprises a pair of deflection electrodes disposed so as to confront each inner electrode surface having a symmetrical concave extending in a direction of a beam trajectory.Type: ApplicationFiled: May 31, 2005Publication date: June 1, 2006Inventors: Hiroshi Matsushita, Mitsuaki Kabasawa, Yoshitaka Amano, Yasuhiko Kimura, Mitsukuni Tsukihara, Junichi Murakami
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Publication number: 20060113492Abstract: A charge compensation device according to this invention is for suppressing charging of a wafer when the wafer is irradiated with a beam from a beam generation source unit. The charge compensation device comprises at least one first arc chamber having at least one first extraction hole and a second arc chamber having at least one second extraction hole faced on the reciprocal swinging beam of the predetermined scan range. A first arc voltage is applied to the first arc chamber to generate first plasma in the first arc chamber. The generated first plasma is extracted from the first arc chamber and introduced into the second arc chamber. Second plasma is produced in the second arc chamber, and second extracted plasma from the second arc chamber forms a plasma bridge between the second extraction hole and the reciprocal swinging beam.Type: ApplicationFiled: June 14, 2005Publication date: June 1, 2006Inventors: Hiroshi Kawaguchi, Makoto Sano, Michiro Sugitani, Junichi Murakami, Mitsukuni Tsukihara, Mitsuaki Kabasawa, Takashi Kuroda, Kazunari Ueda, Hiroshi Sogabe
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Publication number: 20060113465Abstract: A method to increase low-energy beam current according to this invention is applied to an irradiation system with ion beam comprising a beam generation source, a mass analysis device, a beam transformer, a deflector for scanning, a beam parallelizing device, an acceleration/deceleration device, and an energy filtering device. The beam transformer comprises a vertically focusing DC quadrupole electromagnet QD and a longitudinally focusing DC quadrupole electromagnet QF. The beam transformer transforms a beam having a circular cross-section or an elliptical or oval cross-section to the beam has an elliptical or oval cross-section that is long in the scan direction in all the region of a beam line after deflection for scanning.Type: ApplicationFiled: August 12, 2005Publication date: June 1, 2006Inventors: Mitsuaki Kabasawa, Mitsukuni Tsukihara
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Publication number: 20060113493Abstract: The present invention is a method to enhance accuracy of irradiation with beam for an irradiation system with a beam. The irradiation system comprises a beam generation source, a mass analysis device, a beam transformer, a scanner which swings the beam reciprocally with high speed, a beam parallelizing device, an acceleration/deceleration device, an energy filtering device, and beam monitors. The beam transformer comprises a vertically focusing synchronized quadrupole electromagnet syQD and a horizontally focusing synchronized quadrupole electromagnet syQF. Consequently, it is possible to correct at least one of a deviation in beam divergence angle and a deviation in beam size within a range between a center trajectory and an outer trajectory after swinging of the beam by the scanner.Type: ApplicationFiled: August 12, 2005Publication date: June 1, 2006Inventors: Mitsuaki Kabasawa, Mitsukuni Tsukihara
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Patent number: 6984833Abstract: The present invention is applied to an ion implanter provided with a vacuum pressure compensation mechanism. The pressure compensation mechanism samples measured beam currents and vacuum pressures in the vicinity of wafers in preliminary implantation and stores function parameters in a memory unit which are obtained by calculating parameters of a predetermined function by fitting the relationship between the measured beam currents and the vacuum pressures. In actual implantation, the pressure compensation mechanism corrects the measured beam current using the function parameters stored as a function of the vacuum pressure, and based on the corrected beam current, the dosage control is performed. In the present invention, an actual beam loss is compensated for based on the estimation from a pressure in the vicinity of the wafers in a region downstream of a mass analysis slit.Type: GrantFiled: June 10, 2004Date of Patent: January 10, 2006Assignee: Sumitomo Eaton Nova CorporationInventors: Makoto Sano, Michiro Sugitani, Mitsuaki Kabasawa, Mitsukuni Tsukihara
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Publication number: 20040251432Abstract: The present invention is applied to an ion implanter provided with a vacuum pressure compensation mechanism. The pressure compensation mechanism samples measured beam currents and vacuum pressures in the vicinity of wafers in preliminary implantation and stores function parameters in a memory unit which are obtained by calculating parameters of a predetermined function by fitting the relationship between the measured beam currents and the vacuum pressures. In actual implantation, the pressure compensation mechanism corrects the measured beam current using the function parameters stored as a function of the vacuum pressure, and based on the corrected beam current, the dosage control is performed. In the present invention, an actual beam loss is compensated for based on the estimation from a pressure in the vicinity of the wafers in a region downstream of a mass analysis slit.Type: ApplicationFiled: June 10, 2004Publication date: December 16, 2004Applicant: Sumitomo Eaton Nova CorporationInventors: Makoto Sano, Michiro Sugitani, Mitsuaki Kabasawa, Mitsukuni Tsukihara
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Patent number: 6797968Abstract: An ion beam processing apparatus comprises a beam line vacuum chamber from an ion source to a processing chamber. The apparatus further comprises a beam line structure for transporting ion beam from the ion source through the beam line vacuum chamber to the processing chamber. A mass analysis magnet unit is arranged from the outside in a partial section of the beam line vacuum chamber. An effective magnetic field area of the mass analysis magnet unit is disposed in a partial section of the beam line structure. Continuous cusp field forming magnet apparatuses are arranged at the series of beam line vacuum chamber part of the beam line structure to confine ion beam by forming continuous cusp fields.Type: GrantFiled: December 27, 2002Date of Patent: September 28, 2004Assignee: Sumitomo Eaton Nova CorporationInventors: Mitsukuni Tsukihara, Yoshitaka Amano, Mitsuaki Kabasawa, Michiro Sugitani, Hiroki Murooka, Hiroshi Matsushita
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Patent number: 6794661Abstract: In an ion implantation apparatus according to the present invention, ions are extracted from an ion source with the aid of extraction electrodes. The ions thus extracted are analyzed in mass by means of a mass analysis magnet apparatus and a mass analysis slit, so that the required ions are implanted in a substrate. Magnets for generating cusp magnetic fields are serially disposed along an ion beam line extending from the front part to the rear part of the mass analysis magnet apparatus.Type: GrantFiled: April 9, 2002Date of Patent: September 21, 2004Assignee: Sumitomo Eaton Nova CorporationInventors: Mitsukuni Tsukihara, Mitsuaki Kabasawa, Michiro Sugitani, Hiroki Murooka, Hiroshi Matsushita
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Patent number: 6720563Abstract: In an ion implantation apparatus, a reduction of an energy contanimination is achieved when ions are implanted into a wafer with a low energy. A beam transportation efficiency between mutually different positions on a beam line correlates with the energy contamination of the wafer, and the beam transportation efficiency is adjusted so that the energy contamination becomes small. Since the beam transportation efficiency is obtained by measuring a beam electric current at each position, the beam transportation efficiency can be obtained before the ions are implanted into the wafer.Type: GrantFiled: July 31, 2000Date of Patent: April 13, 2004Assignee: Sumitomo Eaton Nova CorporationInventor: Mitsuaki Kabasawa
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Patent number: 6635889Abstract: An ion implantation apparatus includes an ion source for generating ions, an extraction electrode for extracting the ions from the ion source by the action of an extraction electric field, and a mass analysis magnet for deflecting or bending the trajectory of an ion beam extracted by the extraction electrode. The ions that have passed through the mass analysis magnet are implanted into a target. The ion implantation apparatus further includes a multi-axis driving mechanism for moving the ion source. The multi-axis driving mechanism changes the relative positional relationship between the ion source and the extraction electrode.Type: GrantFiled: January 18, 2002Date of Patent: October 21, 2003Assignee: Sumitomo Eaton Nova CorporationInventors: Mitsukuni Tsukihara, Mitsuaki Kabasawa, Yuji Takahashi, Michiro Sugitani
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Publication number: 20030122090Abstract: An ion beam processing apparatus comprises a beam line vacuum chamber from an ion source to a processing chamber. The apparatus further comprises a beam line structure for transporting ion beam from the ion source through the beam line vacuum chamber to the processing chamber. A mass analysis magnet unit is arranged from the outside in a partial section of the beam line vacuum chamber. An effective magnetic field area of the mass analysis magnet unit is disposed in a partial section of the beam line structure. Continuous cusp field forming magnet apparatuses are arranged at the series of beam line vacuum chamber part of the beam line structure to confine ion beam by forming continuous cusp fields.Type: ApplicationFiled: December 27, 2002Publication date: July 3, 2003Applicant: SUMITOMO EATON NOVA CORPORATIONInventors: Mitsukuni Tsukihara, Yoshitaka Amano, Mitsuaki Kabasawa, Michiro Sugitani, Hiroki Murooka, Hiroshi Matsushita
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Patent number: 6573517Abstract: An ion injecting apparatus has an ion source, a mass-analyzing magnet, an accelerating/decelerating element, and deflecting elements. The mass analyzing magnet mass-analyzes an ion beam extracted from the ion source. The accelerating/de-celerating element accelerates and decelerates the ion beam at a post-stage. The deflecting elements are arranged between the mass analyzing magnet and the accelerating/decelerating element. Each direction angle of the deflecting element is determined such that a final beam trajectory in the predetermined area before being introduced into a wafer substrate is matched to each other in both an operating mode and a non-operating mode of the deflecting elements.Type: GrantFiled: July 31, 2000Date of Patent: June 3, 2003Assignee: Sumitomo Eaton Nova CorporationInventors: Michiro Sugitani, Mitsukuni Tsukihara, Yoshitomo Hidaka, Mitsuaki Kabasawa, Kouji Inada
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Publication number: 20020179854Abstract: In an ion implantation apparatus according to the present invention, ions are extracted from an ion source with the aid of extraction electrodes. The ions thus extracted are analyzed in mass by means of a mass analysis magnet apparatus and a mass analysis slit, so that the required ions are implanted in a substrate. Magnets for generating cusp magnetic fields are serially disposed along an ion beam line extending from the front part to the rear part of the mass analysis magnet apparatus.Type: ApplicationFiled: April 9, 2002Publication date: December 5, 2002Applicant: Sumitomo Eaton Nova CorporationInventors: Mitsukuni Tsukihara, Mitsuaki Kabasawa, Michiro Sugitani, Hiroki Murooka, Hiroshi Matsushita
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Publication number: 20020096650Abstract: An ion implantation apparatus includes an ion source for generating ions, an extraction electrode for extracting the ions from the ion source by the action of an extraction electric field, and a mass analysis magnet for deflecting or bending the trajectory of an ion beam extracted by the extraction electrode. The ions that have passed through the mass analysis magnet are implanted into a target. The ion implantation apparatus further includes a multi-axis driving mechanism for moving the ion source. The multi-axis driving mechanism changes the relative positional relationship between the ion source and the extraction electrode.Type: ApplicationFiled: January 18, 2002Publication date: July 25, 2002Applicant: Sumitomo Eaton Nova CorporationInventors: Mitsukuni Tsukihara, Mitsuaki Kabasawa, Yuji Takahashi, Michiro Sugitani