Abstract: An image sensor includes a plurality of pixels. Each pixel includes a photoelectric conversion portion, a reset gate for controlling removal of a charge accumulated in the photoelectric conversion portion, a charge accumulation portion, an accumulation gate for controlling a transfer of the charge from the photoelectric conversion portion to the charge accumulation portion, and a readout gate for controlling readout of the charge from the charge accumulation portion. The reset gate removes the charge generated in the photoelectric conversion portion by excitation light. The accumulation gate transfers the charge generated in the photoelectric conversion portion by fluorescence to the charge accumulation portion. The readout gate performs control for reading out the charge after the charge transfer is performed n times. The number n of the charge transfers is set for each pixel.

Abstract: An image sensor includes a plurality of pixels. Each pixel includes a photoelectric conversion portion, a reset gate for controlling removal of a charge accumulated in the photoelectric conversion portion, a charge accumulation portion, an accumulation gate for controlling a transfer of the charge from the photoelectric conversion portion to the charge accumulation portion, and a readout gate for controlling readout of the charge from the charge accumulation portion. The reset gate removes the charge generated in the photoelectric conversion portion by excitation light. The accumulation gate transfers the charge generated in the photoelectric conversion portion by fluorescence to the charge accumulation portion. The readout gate performs control for reading out the charge after the charge transfer is performed n times. The number n of the charge transfers is set for each pixel.

Abstract: A photodiode array, having a plurality of photodiodes 12 (n-type channel regions 121), and a light entrance portion 13, formed of an opening that is used to make light to be detected by photodiodes 12 enter, are provided in a substrate 10 of a photodetector 1A having an n-type substrate 101 and a p-type epitaxial layer 102. Furthermore, a carrier capturing portion 60, for capturing carriers generated at a substrate portion near the light entrance portion 13 and removes the captured carriers to the exterior via an electrode 61, is arranged from a layer portion of the epitaxial layer 102 that is positioned between the photodiode array 11 and the light entrance portion 13. A photodetector of a simple arrangement, which, when applied to a spectrometer, enables the positioning precision of components of the spectrometer to be improved, and a spectrometer using this photodetector are thus realized.

Abstract: An image sensor 20A contains a photodiode array portion 21, a signal processor 22, a switching instruction part 23A and a control part 24A. Each switch SWn is provided between the corresponding photodiode PDn and the common output line L, and instructed to carry out the switching operation by the switching instruction part 23A so as to be closed, whereby the charges accumulated in the junction capacitance portion of the photodiode PDn are output to the common output line L. On the basis of the instruction from the switching instruction part 23A, the N switches SW1 to SWN carry out the switching operation so that the N switches SW1 to SWN are set to the close state in the different periods and the interval at which each switch SWn is set to the close state is equal to an integral multiple of a base period. As described above, the charge accumulation time of each of the N photodiodes PD1 to PDN is set to an integral multiple of the base period.

Abstract: A photodiode array, having a plurality of photodiodes 12 (n-type channel regions 121), and a light entrance portion 13, formed of an opening that is used to make light to be detected by photodiodes 12 enter, are provided in a substrate 10 of a photodetector 1A having an n-type substrate 101 and a p-type epitaxial layer 102. Furthermore, a carrier capturing portion 60, for capturing carriers generated at a substrate portion near the light entrance portion 13 and removes the captured carriers to the exterior via an electrode 61, is arranged from a layer portion of the epitaxial layer 102 that is positioned between the photodiode array 11 and the light entrance portion 13. A photodetector of a simple arrangement, which, when applied to a spectrometer, enables the positioning precision of components of the spectrometer to be improved, and a spectrometer using this photodetector are thus realized.

Abstract: An image sensor 20A contains a photodiode array portion 21, a signal processor 22, a switching instruction part 23A and a control part 24A. Each switch SWn is provided between the corresponding photodiode PDn and the common output line L, and instructed to carry out the switching operation by the switching instruction part 23A so as to be closed, whereby the charges accumulated in the junction capacitance portion of the photodiode PDn are output to the common output line L. On the basis of the instruction from the switching instruction part 23A, the N switches SW1 to SWN carry out the switching operation so that the N switches SW1 to SWN are set to the close state in the different periods and the interval at which each switch SWn is set to the close state is equal to an integral multiple of a base period. As described above, the charge accumulation time of each of the N photodiodes PD1 to PDN is set to an integral multiple of the base period.