Abstract: A pressure and flow rate of a gas flowing into or out of a processing chamber are controlled, so as to decrease or increase an atmosphere in the processing chamber higher or lower than a target pressure to obtain a target pressure. During a first period, an opening speed of an opening degree adjusting device provided in an inlet pipe communicating to the processing chamber is controlled to a first target value toward a first predetermined functional approximation line (for example a function of second degree) as ideal value. During the rest of periods other than the first period, the opening speed is controlled stepwise to two or more predetermined target values so that the processing chamber reaches the target pressure. During a period before the first period, the opening speed may be controlled to a second target value among the two or more target values, based on a control amount for the opening degree adjusting device.

Abstract: A plasma treatment method comprising exhausting a process chamber so as to decompress the process chamber, mounting a wafer on a suscepter, supplying a process gas to the wafer through a shower electrode, applying high frequency power, which has a first frequency f.sub.1 lower than an inherent lower ion transit frequencies of the process gas, to the suscepter, and applying high frequency power, which has a second frequency f.sub.2 higher than an inherent upper ion transit frequencies of the process gas, whereby a plasma is generated in the process chamber and activated species influence the wafer.

Abstract: A reduced pressure treatment unit comprising a plurality of treatment chambers conducting reduced pressure process treatment of a treatment object (wafer) and a normal pressure treatment unit conducting normal pressure process treatment of the treatment object, which are connected by a load lock chamber. The reduced pressure treatment unit comprises a plurality of reduced pressure process treatment chambers connected by means of a gate valve to a reduced pressure transport chamber equipped with a robot arm. The normal pressure treatment unit comprises a plurality of normal pressure process treatment chambers disposed in the vicinity of a robot arm. The load lock chamber is disposed at a position where the transport ranges of the two robot arms overlap.

Abstract: A treatment apparatus comprises a heater including an insulator carrying a to-be-treated object thereon and a resistance heating element therein for heating the to-be-treated object, an electrical supply mechanism including feeders extending into a treatment chamber from outside and terminals connecting the feeders and the resistance heating element, and a metallic pipe surrounding the terminals and those portions of the feeders which extend in the treatment chamber. A treatment apparatus for discharging an exhaust gas from the treatment chamber through an exhaust pipe by means of a suction unit comprises a first heater in the inner wall of the treatment chamber for heating the gas in the treatment chamber, and a second heater for independently heating the exhaust gas in the exhaust pipe at various portions of the exhaust pipe.

Abstract: Disclosed is a plasma processing apparatus, comprising a first electrode on which an object to be processed is to be disposed, a second electrode arranged to face the first electrode, a high frequency power supply for supplying a high frequency power between the first and second electrodes, a processing gas supplying mechanism for forming a plasma into a region between the first and second electrodes, and a bias potential detecting mechanism for detecting the bias potential of the first electrode. The bias detecting mechanism has a detecting terminal positioned in the vicinity of the object to be processed.

Abstract: This invention provides a method of controlling a treatment apparatus including a treatment chamber adjustable to a desired reduced-pressure atmosphere, a mounting table arranged in the treatment chamber to mount an object to be treated, a cooling medium container provided in the mounting table, and a cooling medium supply system for supplying a cooling medium to the cooling medium container and discharging the cooling medium from the cooling medium container. The method includes the steps of treating the object to be treated while decreasing the temperature of the object to be treated by cooling the mounting table by using heat transfer from the cooling medium supplied to the cooling medium container by the cooling medium supply system, and heating the vicinity of a very small gap which traps moisture in a member constituting the treatment apparatus, when the internal temperature of the treatment apparatus is to be raised.

Abstract: An electrostatic chuck of this invention includes a conductive film, an insulating coat formed on a susceptor to cover the conductive film, and a feeder circuit for applying a voltage to the conductive film to cause the insulating coat to generate an electrostatic attractive force. The feeder circuit includes a connecting conductor replacing a portion of the insulating coat to be electrically connected to the conductive film, a first feeder pin extending through the susceptor from its front surface side to its rear surface side and having one end portion electrically connected to the connecting conductor, an insulating member for insulating the first feeder pin from the susceptor, a second feeder pin having one end portion pressed against the other end portion of the first feeder pin to be electrically connected to the first feeder pin, and a power supply electrically connected to the second feeder pin.

Abstract: This invention provides a method of controlling a treatment apparatus including a treatment chamber adjustable to a desired reduced-pressure atmosphere, a mounting table arranged in the treatment chamber to mount an object to be treated, a cooling medium container provided in the mounting table, and a cooling medium supply system for supplying a cooling medium to the cooling medium container and discharging the cooling medium from the cooling medium container. The method includes the steps of treating the object to be treated while decreasing the temperature of the object to be treated by cooling the mounting table by using heat transfer from the cooling medium supplied to the cooling medium container by the cooling medium supply system, and heating the vicinity of a very small gap which traps moisture in a member constituting the treatment apparatus, when the internal temperature of the treatment apparatus is to be raised.

Abstract: A process apparatus comprises a process chamber containing a semiconductor wafer, a gas being able to be supplied to and exhausted from the process chamber, a support table for supporting an object to be processed, which is contained in the process chamber, a gas supply system for supplying the gas into the process chamber, and a gas exhaust system for exhausting the gas from the process chamber. An inner wall of the process chamber and the support table are formed of an aluminum-based material, and the surfaces of these are brought into contact with a fluorine-containing gas, thereby coating the surfaces with AlF.sub.3.

Abstract: A main pump having a wide range of vacuum exhaust capabilities and a high exhaust speed is connected adjacent to a processing chamber and an auxiliary pump having a low exhaust speed is connected by a small-diameter auxiliary pipeline to the exhaust side of the main pump. Since a main pump having a wide range of vacuum exhaust capabilities and a high exhaust speed is connected adjacent to the processing chamber in this manner, not only can improvements in the exhaust characteristics be expected, but it is also possible to reduce the diameter of the auxiliary pipeline from the main pump onward and make the auxiliary pump smaller. Since the auxiliary pump having a low exhaust speed is connected by a small-diameter auxiliary pipeline to the exhaust side of the main pump, the size and cost of the entire system can be reduced.

Abstract: A susceptor of a plasma etching apparatus is arranged on a heater fixing frame incorporating a heater. The fixing frame is arranged on a cooling block containing liquid nitrogen. A boundary clearance is formed between the fixed frame and the cooling block and on a heat transfer path. A method of controlling the temperature of the susceptor includes an initialization mode, an idle mode following the initialization mode, process and maintenance modes selectively following the idle mode. The initialization mode includes the steps of filling the boundary clearance with a heat transfer gas and observing a change in temperature of the susceptor caused by cold transferred from the cooling block. The idle mode is executed after the temperature of the susceptor reaches a predetermined temperature. The idle mode includes the step of exhausting the boundary clearance to set it in a vacuum state to sever the heat transfer path.

Abstract: The present invention provides a plasma process apparatus wherein RF power is applied to a process gas, thereby to convert the gas into plasma for processing an object, the apparatus having a process chamber, an upper electrode located in the process chamber and having a gas-supplying section for supplying a process gas, a lower electrode located in the process chamber, having a cooling means, and opposing the upper electrode, for supporting an object, and RF power supplying means electrically connected to the lower electrode, protruding from the process chamber and connected to a RF power supply, for supplying RF power between the upper and lower electrodes, wherein the RF power supplying means includes, an outer conductive pipe surrounding the inner conductive rod and spaced therefrom, and a fixing member inserted between the inner conductive rod and the outer conductive pipe and having concaves and convexes, the inner conductive rod and the outer conductive pipe being electrically connected to an RF power

Abstract: A plasma etching apparatus for a semiconductor wafer includes a susceptor arranged in a vacuum process chamber. A groove for flowing a heat transfer gas is formed in the mounting surface of the susceptor. The groove includes an annular groove portion formed along the peripheral edge of the mounting surface, and a gas path vertically extending through the susceptor is connected to the annular groove portion. A sheet-like electrostatic chuck is airtightly adhered to the mounting surface of the susceptor to cover the groove. A plurality of through holes are formed in the electrostatic chuck, and these holes are arranged along an above the groove. The heat transfer gas is supplied between the electrostatic chuck and the semiconductor wafer through the gas path, the groove, and the through holes. The heat transfer gas contributes to transfer of cold from a liquid nitrogen source arranged under the susceptor to the wafer.

Abstract: A plasma etching apparatus includes a wafer-mount arranged in an aluminum-made process chamber. The wafer-mount comprises an aluminum-made susceptor, a heater fixing frame and a cooling block, and a ceramics heater is attached to the heater fixing frame. A bore in which liquid nitrogen is contained is formed in the cooling block. The cold of the cooling block is transmitted to a wafer on the susceptor to cool it while it is being etched. The ceramics heater adjusts the temperature of the wafer cooled. Liquid nitrogen is circulated in the bore in the cooling block, passing through coolant passages defined by a pair of joint devices which connect the bottom of the process chamber and the cooling block to each other.