Abstract: There is provided a method of manufacturing hydrophilic carbon nanotubes, which is capable of imparting hydrophilicity without damaging the surface of the carbon nanotubes. By irradiating carbon nanotubes 4 with ultraviolet ray 3, hydrophilic functional group(s) are introduced into the surface of carbon nanotubes 4. Hydrophilicity is imparted to the carbon nanotubes to such an extent that a contact angle of water is in the range of less than 130°. Ultraviolet ray 3 is a far ultraviolet ray having a wavelength ranging from 1 to 190 nm. The irradiation with ultraviolet ray 3 is conducted in the presence of oxygen and hydrogen or in the presence of ozone and hydrogen. The end part(s) of carbon nanotubes 4 is opened by the irradiation with ultraviolet ray 3.

Abstract: There is provided a method of manufacturing hydrophilic carbon nanotubes, which is capable of imparting hydrophilicity without damaging the surface of the carbon nanotubes. By irradiating carbon nanotubes 4 with ultraviolet ray 3, hydrophilic functional group(s) are introduced into the surface of carbon nanotubes 4. Hydrophilicity is imparted to the carbon nanotubes to such an extent that a contact angle of water is in the range of less than 130°. Ultraviolet ray 3 is a far ultraviolet ray having a wavelength ranging from 1 to 190 nm. The irradiation with ultraviolet ray 3 is conducted in the presence of oxygen and hydrogen or in the presence of ozone and hydrogen. The end part(s) of carbon nanotubes 4 is opened by the irradiation with ultraviolet ray 3.

Abstract: A cleaning apparatus for removing organic matters such as phthalates that have deposited on the surface of a semiconductor substrate while restraining the growth of a natural oxide film includes a device for irradiating the semiconductor substrate contaminated by the organic matters. The device emits a vacuum ultraviolet light having a wavelength within a range from 165 to 179 nm in an atmosphere of oxygen or air that is introduced from an O2 or air intake port, thereby decomposing and removing the contaminant.

Abstract: It is an object of the present invention to provide a cleaning method of and a cleaning apparatus for removing organic matters such as phthalates that have deposited on the surface of a semiconductor substrate while restraining the growth of a natural oxide film. The present invention provides a method of cleaning a semiconductor substrate, which comprises irradiating a semiconductor substrate contaminated by organic matters such as phthalic acid, phthalate and derivatives thereof with vacuum ultraviolet light having a wavelength within a range from 165 to 179 nm in an atmosphere of oxygen or air that is introduced from an O2 or air intake port, thereby decomposing and removing the contaminant.

Abstract: It is an object of the present invention to provide a cleaning method of and a cleaning apparatus for removing organic matters such as phthalates that have deposited on the surface of a semiconductor substrate while restraining the growth of a natural oxide film. The present invention provides a method of cleaning a semiconductor substrate, which comprises irradiating a semiconductor substrate contaminated by organic matters such as phthalic acid, phthalate and derivatives thereof with vacuum ultraviolet light having a wavelength within a range from 165 to 179 nm in an atmosphere of oxygen or air that is introduced from an O2 or air intake port, thereby decomposing and removing the contaminant.