Patents by Inventor Mitsuaki Osame
Mitsuaki Osame has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20220406865Abstract: A potential of a gate of a driving transistor is fixed, and the driving transistor is operated in a saturation region, so that a current is supplied thereto anytime. A current control transistor operating in a linear region is disposed serially with the driving transistor, and a video signal for transmitting a signal of emission or non-emission of the pixel is input to a gate of the current control transistor via a switching transistor.Type: ApplicationFiled: August 23, 2022Publication date: December 22, 2022Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.Inventors: Mitsuaki OSAME, Aya ANZAI, Yu YAMAZAKI, Ryota FUKUMOTO
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Patent number: 11430845Abstract: A potential of a gate of a driving transistor is fixed, and the driving transistor is operated in a saturation region, so that a current is supplied thereto anytime. A current control transistor operating in a linear region is disposed serially with the driving transistor, and a video signal for transmitting a signal of emission or non-emission of the pixel is input to a gate of the current control transistor via a switching transistor.Type: GrantFiled: December 23, 2019Date of Patent: August 30, 2022Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Mitsuaki Osame, Aya Anzai, Yu Yamazaki, Ryota Fukumoto
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Publication number: 20220077199Abstract: It is an object of the present invention to provide a semiconductor display device having an interlayer insulating film which can obtain planarity of a surface while controlling film formation time, can control treatment time of heating treatment with an object of removing moisture, and can prevent moisture in the interlayer insulating film from being discharged to a film or an electrode adjacent to the interlayer insulating film. An inorganic insulating film containing nitrogen, which is less likely to transmit moisture compared with an organic resin, is formed so as to cover a TFT. Next, an organic resin film containing photosensitive acrylic resin is applied to the organic is insulting film, and the organic resin film is partially exposed to light to be opened. Thereafter, an inorganic insulting film containing nitrogen, which is less likely to transmit moisture compared with an organic resin, is formed so as to cover the opened organic resin film.Type: ApplicationFiled: August 13, 2021Publication date: March 10, 2022Inventors: Shunpei YAMAZAKI, Satoshi MURAKAMI, Masahiko HAYAKAWA, Kiyoshi KATO, Mitsuaki OSAME
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Publication number: 20220076628Abstract: A light emitting device and an element substrate which are capable of suppressing variations in luminance intensity of a light emitting element among pixels due to characteristic variations of a driving transistor without suppressing off-current of a switching transistor low and increasing storage capacity of a capacitor. A gate potential of a driving transistor is connected to a first scan line or a second scan line, and the driving transistor operates in a saturation region. A current controlling transistor which operates in a linear region is connected in series to the driving transistor. A video signal which transmits a light emission or non-emission of a pixel is input to the gate of the current controlling transistor through a switching transistor.Type: ApplicationFiled: November 15, 2021Publication date: March 10, 2022Inventors: Yu Yamazaki, Aya Anzai, Mitsuaki Osame
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Patent number: 11189223Abstract: A light emitting device and an element substrate which are capable of suppressing variations in luminance intensity of a light emitting element among pixels due to characteristic variations of a driving transistor without suppressing off-current of a switching transistor low and increasing storage capacity of a capacitor. A gate potential of a driving transistor is connected to a first scan line or a second scan line, and the driving transistor operates in a saturation region. A current controlling transistor which operates in a linear region is connected in series to the driving transistor. A video signal which transmits a light emission or non-emission of a pixel is input to the gate of the current controlling transistor through a switching transistor.Type: GrantFiled: May 22, 2020Date of Patent: November 30, 2021Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Yu Yamazaki, Aya Anzai, Mitsuaki Osame
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Patent number: 11159173Abstract: The present technology relates to a DAC circuit, a solid-state imaging element, and electronic equipment that can be achieved with a small-scale circuit configuration. The DAC circuit includes: a ramp DAC that generates a ramp signal that changes in voltage with a constant time gradient; an injection DAC that outputs a predetermined voltage during a reset period for resetting a comparison target voltage to be compared with the ramp signal; and an adding circuit that adds an output of the ramp DAC and an output of the injection DAC and outputs the outputs to a comparison circuit as a comparison reference voltage. The present technology can be applied to, for example, a DAC circuit of a solid-state imaging element, and the like.Type: GrantFiled: January 15, 2019Date of Patent: October 26, 2021Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATIONInventors: Shin Kitano, Masaki Sakakibara, Hidekazu Kikuchi, Mitsuaki Osame
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Publication number: 20210327986Abstract: The present invention provides a TFT that has a channel length particularly longer than that of an existing one, specifically, several tens to several hundreds times longer than that of the existing one, and thereby allowing turning to an on-state at a gate voltage particularly higher than the existing one and driving, and allowing having a low channel conductance gd. According to the present invention, not only the simple dispersion of on-current but also the normalized dispersion thereof can be reduced, and other than the reduction of the dispersion between the individual TFTs, the dispersion of the OLEDs themselves and the dispersion due to the deterioration of the OLED can be reduced.Type: ApplicationFiled: June 30, 2021Publication date: October 21, 2021Inventors: Makoto Udagawa, Masahiko Hayakawa, Jun Koyama, Mitsuaki Osame, Aya Anzai
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Publication number: 20210295773Abstract: A-light-emitting device which realizes a high aperture ratio and in which the quality of image is little affected by the variation in the characteristics of TFTs. The channel length of the driving TFTs is selected to be very larger than the channel width of the driving TFTs to improve current characteristics in the saturated region, and a high VGS is applied to the driving TFTs to obtain a desired drain current. Therefore, the drain currents of the driving TFTs are little affected by the variation in the threshold voltage. In laying out the pixels, further, wiring is arranged under the partitioning wall and the driving TFTs are arranged under the wiring in order to avoid a decrease in the aperture ratio despite of an increase in the size of the driving TFT.Type: ApplicationFiled: April 5, 2021Publication date: September 23, 2021Inventors: Mitsuaki OSAME, Aya ANZAI, Jun KOYAMA, Makoto UDAGAWA, Masahiko HAYAKAWA, Shunpei YAMAZAKI
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Patent number: 11101299Abstract: It is an object of the present invention to provide a semiconductor display device having an interlayer insulating film which can obtain planarity of a surface while controlling film formation time, can control treatment time of heating treatment with an object of removing moisture, and can prevent moisture in the interlayer insulating film from being discharged to a film or an electrode adjacent to the interlayer insulating film. An inorganic insulating film containing nitrogen, which is less likely to transmit moisture compared with an organic resin, is formed so as to cover a TFT. Next, an organic resin film containing photosensitive acrylic resin is applied to the organic insulting film, and the organic resin film is partially exposed to light to be opened. Thereafter, an inorganic insulting film containing nitrogen, which is less likely to transmit moisture compared with an organic resin, is fanned so as to cover the opened organic resin film.Type: GrantFiled: August 21, 2018Date of Patent: August 24, 2021Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Shunpei Yamazaki, Satoshi Murakami, Masahiko Hayakawa, Kiyoshi Kato, Mitsuaki Osame
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Patent number: 11063102Abstract: The present invention provides a TFT that has a channel length particularly longer than that of an existing one, specifically, several tens to several hundreds times longer than that of the existing one, and thereby allowing turning to an on-state at a gate voltage particularly higher than the existing one and driving, and allowing having a low channel conductance gd. According to the present invention, not only the simple dispersion of on-current but also the normalized dispersion thereof can be reduced, and other than the reduction of the dispersion between the individual TFTs, the dispersion of the OLEDs themselves and the dispersion due to the deterioration of the OLED can be reduced.Type: GrantFiled: March 20, 2019Date of Patent: July 13, 2021Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Makoto Udagawa, Masahiko Hayakawa, Jun Koyama, Mitsuaki Osame, Aya Anzai
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Patent number: 10978613Abstract: A-light-emitting device which realizes a high aperture ratio and in which the quality of image is little affected by the variation in the characteristics of TFTs. The channel length of the driving TFTs is selected to be very larger than the channel width of the driving TFTs to improve current characteristics in the saturated region, and a high VGS is applied to the driving TFTs to obtain a desired drain current. Therefore, the drain currents of the driving TFTs are little affected by the variation in the threshold voltage. In laying out the pixels, further, wiring is arranged under the partitioning wall and the driving TFTs are arranged under the wiring in order to avoid a decrease in the aperture ratio despite of an increase in the size of the driving TFT.Type: GrantFiled: August 9, 2017Date of Patent: April 13, 2021Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Mitsuaki Osame, Aya Anzai, Jun Koyama, Makoto Udagawa, Masahiko Hayakawa, Shunpei Yamazaki
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Publication number: 20210067168Abstract: The present technology relates to a DAC circuit, a solid-state imaging element, and electronic equipment that can be achieved with a small-scale circuit configuration. The DAC circuit includes: a ramp DAC that generates a ramp signal that changes in voltage with a constant time gradient; an injection DAC that outputs a predetermined voltage during a reset period for resetting a comparison target voltage to be compared with the ramp signal; and an adding circuit that adds an output of the ramp DAC and an output of the injection DAC and outputs the outputs to a comparison circuit as a comparison reference voltage. The present technology can be applied to, for example, a DAC circuit of a solid-state imaging element, and the like.Type: ApplicationFiled: January 15, 2019Publication date: March 4, 2021Inventors: SHIN KITANO, MASAKI SAKAKIBARA, HIDEKAZU KIKUCHI, MITSUAKI OSAME
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Publication number: 20200286428Abstract: A light emitting device and an element substrate which are capable of suppressing variations in luminance intensity of a light emitting element among pixels due to characteristic variations of a driving transistor without suppressing off-current of a switching transistor low and increasing storage capacity of a capacitor. A gate potential of a driving transistor is connected to a first scan line or a second scan line, and the driving transistor operates in a saturation region. A current controlling transistor which operates in a linear region is connected in series to the driving transistor. A video signal which transmits a light emission or non-emission of a pixel is input to the gate of the current controlling transistor through a switching transistor.Type: ApplicationFiled: May 22, 2020Publication date: September 10, 2020Inventors: Yu Yamazaki, Aya Anzai, Mitsuaki Osame
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Patent number: 10680049Abstract: The present invention provides a TFT that has a channel length particularly longer than that of an existing one, specifically, several tens to several hundreds times longer than that of the existing one, and thereby allowing turning to an on-state at a gate voltage particularly higher than the existing one and driving, and allowing having a low channel conductance gd. According to the present invention, not only the simple dispersion of on-current but also the normalized dispersion thereof can be reduced, and other than the reduction of the dispersion between the individual TFTs, the dispersion of the OLEDs themselves and the dispersion due to the deterioration of the OLED can be reduced.Type: GrantFiled: March 20, 2019Date of Patent: June 9, 2020Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Makoto Udagawa, Masahiko Hayakawa, Jun Koyama, Mitsuaki Osame, Aya Anzai
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Patent number: 10679553Abstract: A light emitting device and an element substrate which are capable of suppressing variations in luminance intensity of a light emitting element among pixels due to characteristic variations of a driving transistor without suppressing off-current of a switching transistor low and increasing storage capacity of a capacitor. A gate potential of a driving transistor is connected to a first scan line or a second scan line, and the driving transistor operates in a saturation region. A current controlling transistor which operates in a linear region is connected in series to the driving transistor. A video signal which transmits a light emission or non-emission of a pixel is input to the gate of the current controlling transistor through a switching transistor.Type: GrantFiled: April 10, 2017Date of Patent: June 9, 2020Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Yu Yamazaki, Aya Anzai, Mitsuaki Osame
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Publication number: 20200144348Abstract: A potential of a gate of a driving transistor is fixed, and the driving transistor is operated in a saturation region, so that a current is supplied thereto anytime. A current control transistor operating in a linear region is disposed serially with the driving transistor, and a video signal for transmitting a signal of emission or non-emission of the pixel is input to a gate of the current control transistor via a switching transistor.Type: ApplicationFiled: December 23, 2019Publication date: May 7, 2020Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.Inventors: Mitsuaki OSAME, Aya ANZAI, Yu YAMAZAKI, Ryota FUKUMOTO
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Patent number: 10461140Abstract: The present invention provides a TFT that has a channel length particularly longer than that of an existing one, specifically, several tens to several hundreds times longer than that of the existing one, and thereby allowing turning to an on-state at a gate voltage particularly higher than the existing one and driving, and allowing having a low channel conductance gd. According to the present invention, not only the simple dispersion of on-current but also the normalized dispersion thereof can be reduced, and other than the reduction of the dispersion between the individual TFTs, the dispersion of the OLEDs themselves and the dispersion due to the deterioration of the OLED can be reduced.Type: GrantFiled: February 13, 2018Date of Patent: October 29, 2019Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Makoto Udagawa, Masahiko Hayakawa, Jun Koyama, Mitsuaki Osame, Aya Anzai
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Patent number: 10373550Abstract: A light emitting device that achieves long life, and which is capable of performing high duty drive, by suppressing initial light emitting element deterioration is provided. Reverse bias application to an EL element (109) is performed one row at a time by forming a reverse bias electric power source line (112) and a reverse bias TFT (108). Reverse bias application can therefore be performed in synchronous with operations for write-in of an image signal, light emission, erasure, and the like. Reverse bias application therefore becomes possible while maintaining a duty equivalent to that of a conventional driving method.Type: GrantFiled: July 5, 2018Date of Patent: August 6, 2019Assignee: Semiconductor Energy Laboratory Co., Ltd.Inventors: Mitsuaki Osame, Aya Anzai, Yoshifumi Tanada, Keisuke Miyagawa, Satoshi Seo, Shunpei Yamazaki
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Publication number: 20190221628Abstract: The present invention provides a TFT that has a channel length particularly longer than that of an existing one, specifically, several tens to several hundreds times longer than that of the existing one, and thereby allowing turning to an on-state at a gate voltage particularly higher than the existing one and driving, and allowing having a low channel conductance gd. According to the present invention, not only the simple dispersion of on-current but also the normalized dispersion thereof can be reduced, and other than the reduction of the dispersion between the individual TFTs, the dispersion of the OLEDs themselves and the dispersion due to the deterioration of the OLED can be reduced.Type: ApplicationFiled: March 20, 2019Publication date: July 18, 2019Inventors: Makoto Udagawa, Masahiko Hayakawa, Jun Koyama, Mitsuaki Osame, Aya Anzai
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Publication number: 20190221627Abstract: The present invention provides a TFT that has a channel length particularly longer than that of an existing one, specifically, several tens to several hundreds times longer than that of the existing one, and thereby allowing turning to an on-state at a gate voltage particularly higher than the existing one and driving, and allowing having a low channel conductance gd. According to the present invention, not only the simple dispersion of on-current but also the normalized dispersion thereof can be reduced, and other than the reduction of the dispersion between the individual TFTs, the dispersion of the OLEDs themselves and the dispersion due to the deterioration of the OLED can be reduced.Type: ApplicationFiled: March 20, 2019Publication date: July 18, 2019Inventors: Makoto Udagawa, Masahiko Hayakawa, Jun Koyama, Mitsuaki Osame, Aya Anzai