Patents by Inventor Mitsuaki Oya

Mitsuaki Oya has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9287378
    Abstract: Provided is a nitride semiconductor light-emitting element having a low contact resistance between an n-type nitride semiconductor layer and an n-side electrode. A portion of the n-type nitride semiconductor layer is removed by a plasma etching process using a gas containing halogen to expose a surface region of the n-type nitride semiconductor layer. Next, such an exposed surface region is further subjected to a plasma treatment using a gas containing oxygen. After that, the n-side electrode formed of aluminum is formed so as to be in contact with the surface region. In the surface region, a carrier concentration is decreased from the inside of the n-type nitride semiconductor layer toward the n-side electrode.
    Type: Grant
    Filed: July 1, 2014
    Date of Patent: March 15, 2016
    Assignee: Panasonic Intellectual Property Management Co., Ltd.
    Inventors: Mitsuaki Oya, Toshiya Yokogawa
  • Patent number: 9209350
    Abstract: When a belt-like nitride semiconductor stacking structure 110 having a principal plane of an m-plane is broken along a linear groove 104, two or more side surfaces may be formed on the lateral side thereof. This decreases the fabrication efficiency of the triangular prismatic m-plane nitride semiconductor light-emitting diode. To solve this problem, Angle X of not less than 75 degrees and not more than 105 degrees is formed between the linear groove 104 and one cleavage axis selected from the group consisting of an a-axis and a c-axis. Then, the belt-like nitride semiconductor stacking structure 110 was broken along the linear groove 104 to form a quadratic prismatic nitride semiconductor stacking structure 120. Subsequently, the quadratic prismatic nitride semiconductor stacking structure 120 is broken along another linear groove 106 to obtain a triangular prismatic m-plane nitride semiconductor light-emitting diode 130.
    Type: Grant
    Filed: September 26, 2014
    Date of Patent: December 8, 2015
    Assignee: PANASONIC INTELLECTUAL PROPERTY MANAGEMENT CO., LTD.
    Inventors: Mitsuaki Oya, Toshiya Yokogawa
  • Publication number: 20150200330
    Abstract: When a belt-like nitride semiconductor stacking structure 110 having a principal plane of an m-plane is broken along a linear groove 104, two or more side surfaces may be formed on the lateral side thereof. This decreases the fabrication efficiency of the triangular prismatic m-plane nitride semiconductor light-emitting diode. To solve this problem, Angle X of not less than 75 degrees and not more than 105 degrees is formed between the linear groove 104 and one cleavage axis selected from the group consisting of an a-axis and a c-axis. Then, the belt-like nitride semiconductor stacking structure 110 was broken along the linear groove 104 to form a quadratic prismatic nitride semiconductor stacking structure 120. Subsequently, the quadratic prismatic nitride semiconductor stacking structure 120 is broken along another linear groove 106 to obtain a triangular prismatic m-plane nitride semiconductor light-emitting diode 130.
    Type: Application
    Filed: September 26, 2014
    Publication date: July 16, 2015
    Inventors: MITSUAKI OYA, TOSHIYA YOKOGAWA
  • Publication number: 20150021653
    Abstract: Provided is a nitride semiconductor light-emitting element having a low contact resistance between an n-type nitride semiconductor layer and an n-side electrode. A portion of the n-type nitride semiconductor layer is removed by a plasma etching process using a gas containing halogen to expose a surface region 102a of the n-type nitride semiconductor layer 102. Next, such an exposed surface region 102a is further subjected to a plasma treatment using a gas containing oxygen. After that, the n-side electrode 109 formed of aluminum is formed so as to be in contact with the surface region 102a. In the surface region 102a, a carrier concentration is decreased from the inside of the n-type nitride semiconductor layer 102 toward the n-side electrode 109.
    Type: Application
    Filed: July 1, 2014
    Publication date: January 22, 2015
    Inventors: MITSUAKI OYA, TOSHIYA YOKOGAWA
  • Patent number: 8933543
    Abstract: A nitride-based semiconductor device of the present invention includes: a nitride-based semiconductor multilayer structure 20 which includes a p-type semiconductor region with a surface 12 being inclined from the m-plane by an angle of not less than 1° and not more than 5°; and an electrode 30 provided on the p-type semiconductor region. The p-type semiconductor region is formed by an AlxInyGazN (where x+y+z=1, x?0, y?0, and z?0) layer 26. The electrode 30 includes a Mg layer 32 and an Ag layer 34 provided on the Mg layer 32. The Mg layer 32 is in contact with the surface 12 of the p-type semiconductor region of the semiconductor multilayer structure 20.
    Type: Grant
    Filed: March 15, 2011
    Date of Patent: January 13, 2015
    Assignee: Panasonic Intellectual Property Management Co., Ltd.
    Inventors: Toshiya Yokogawa, Mitsuaki Oya, Atsushi Yamada, Akihiro Isozaki
  • Patent number: 8791473
    Abstract: An illuminating device according to the present invention includes at least a first nitride-based semiconductor light-emitting element and a second nitride-based semiconductor light-emitting element, in which: the first nitride-based semiconductor light-emitting element and the second nitride-based semiconductor light-emitting element each include a semiconductor chip; the semiconductor chip includes a nitride-based semiconductor multilayer structure 45 formed from an AlxInyGazN (x+y+z=1, x?0, y?0, z?0) semiconductor, and the nitride-based semiconductor multilayer structure 20 includes an active layer region 24 having an m-plane as an interface; the first nitride-based semiconductor light-emitting element and the second nitride-based semiconductor light-emitting element each emit polarized light from the active layer region 24; and, when the polarized light emitted from the first nitride-based semiconductor light-emitting element and the polarized light emitted from the second nitride-based semiconductor ligh
    Type: Grant
    Filed: July 9, 2009
    Date of Patent: July 29, 2014
    Assignee: Panasonic Corporation
    Inventors: Toshiya Yokogawa, Akira Inoue, Masaki Fujikane, Mitsuaki Oya, Atsushi Yamada, Tadashi Yano
  • Patent number: 8748899
    Abstract: A nitride-based semiconductor device according to the present disclosure includes a nitride-based semiconductor multilayer structure 20 with a p-type semiconductor region, of which the surface 12 defines a tilt angle of one to five degrees with respect to an m plane, and an electrode 30, which is arranged on the p-type semiconductor region. The p-type semiconductor region is made of an AlxInyGazN (where x+y+z=1, x?0, y?0 and z?0) semiconductor layer 26. The electrode 30 includes an Mg layer 32, which is in contact with the surface 12 of the p-type semiconductor region, and a metal layer 34 formed on the Mg layer 32. The metal layer 34 is formed from at least one metallic element that is selected from the group consisting of Pt, Mo and Pd.
    Type: Grant
    Filed: April 16, 2012
    Date of Patent: June 10, 2014
    Assignee: Panasonic Corporation
    Inventors: Toshiya Yokogawa, Mitsuaki Oya, Atsushi Yamada, Ryou Kato
  • Patent number: 8729587
    Abstract: An exemplary nitride-based semiconductor device includes: a nitride-based semiconductor multilayer structure 20 which has a p-type GaN-based semiconductor region whose surface 12 is inclined from the m-plane by an angle of not less than 1° and not more than 5° or the principal surface has a plurality of m-plane steps; and an electrode 30 that is arranged on the p-type GaN-based semiconductor region. The electrode 30 includes a Mg alloy layer 32 which is formed from Mg and metal selected from a group consisting of Pt, Mo, and Pd. The Mg alloy layer 32 is in contact with the surface 12 of the p-type GaN-based semiconductor region of the semiconductor multilayer structure 20.
    Type: Grant
    Filed: August 28, 2012
    Date of Patent: May 20, 2014
    Assignee: Panasonic Corporation
    Inventors: Toshiya Yokogawa, Mitsuaki Oya, Atsushi Yamada, Ryou Kato
  • Patent number: 8729579
    Abstract: An illuminating device includes at least first and second nitride-based semiconductor light-emitting elements each having a semiconductor chip with an active layer region. The active layer region is at an angle of 1° or more with an m plane, and an angle formed by a normal line of a principal surface in the active layer region and a normal line of the m plane is 1° or more and 5° or less. The first and second nitride-based semiconductor light-emitting elements have thicknesses of d1 and d2, respectively, and emit the polarized light having wavelengths ?1 and ?2, respectively, where the inequalities of ?1<?2 and d1<d2 are satisfied.
    Type: Grant
    Filed: March 28, 2012
    Date of Patent: May 20, 2014
    Assignee: Panasonic Corporation
    Inventors: Toshiya Yokogawa, Akira Inoue, Masaki Fujikane, Mitsuaki Oya, Atsushi Yamada, Tadashi Yano
  • Patent number: 8686561
    Abstract: A nitride-based semiconductor light-emitting device 100 includes a GaN substrate 10, of which the principal surface is an m-plane 12, a semiconductor multilayer structure 20 that has been formed on the m-plane 12 of the GaN-based substrate 10, and an electrode 30 arranged on the semiconductor multilayer structure 20. The electrode 30 includes an Mg layer 32, which contacts with the surface of a p-type semiconductor region in the semiconductor multilayer structure 20.
    Type: Grant
    Filed: December 7, 2012
    Date of Patent: April 1, 2014
    Assignee: Panasonic Corporation
    Inventors: Toshiya Yokogawa, Mitsuaki Oya, Atsushi Yamada, Ryou Kato
  • Patent number: 8648378
    Abstract: A nitride-based semiconductor light-emitting device 100 includes a GaN substrate 10, of which the principal surface is an m-plane 12, a semiconductor multilayer structure 20 that has been formed on the m-plane 12 of the GaN-based substrate 10, and an electrode 30 arranged on the semiconductor multilayer structure 20. The electrode 30 includes an Mg layer 32, which contacts with the surface of a p-type semiconductor region in the semiconductor multilayer structure 20.
    Type: Grant
    Filed: December 7, 2012
    Date of Patent: February 11, 2014
    Assignee: Panasonic Corporation
    Inventors: Toshiya Yokogawa, Mitsuaki Oya, Atsushi Yamada, Ryou Kato
  • Patent number: 8441108
    Abstract: A nitride-based semiconductor light-emitting device 100 includes: a GaN substrate 10 with an m-plane surface 12; a semiconductor multilayer structure 20 provided on the m-plane surface 12 of the GaN substrate 10; and an electrode 30 provided on the semiconductor multilayer structure 20. The electrode 30 includes a Zn layer 32 and a metal layer 34 provided on the Zn layer 32. The Zn layer 32 is in contact with a surface of a p-type semiconductor region of the semiconductor multilayer structure 20.
    Type: Grant
    Filed: March 16, 2010
    Date of Patent: May 14, 2013
    Assignee: Panasonic Corporation
    Inventors: Mitsuaki Oya, Toshiya Yokogawa, Atsushi Yamada, Akihiro Isozaki
  • Patent number: 8357607
    Abstract: A nitride-based semiconductor light-emitting device 100 includes a GaN substrate 10, of which the principal surface is an m-plane 12, a semiconductor multilayer structure 20 that has been formed on the m-plane 12 of the GaN-based substrate 10, and an electrode 30 arranged on the semiconductor multilayer structure 20. The electrode 30 includes an Mg alloy layer 32 which is formed of Mg and a metal selected from a group consisting of Pt, Mo, and Pd. The Mg alloy layer 32 is in contact with a surface of a p-type semiconductor region of the semiconductor multilayer structure 20.
    Type: Grant
    Filed: March 9, 2010
    Date of Patent: January 22, 2013
    Assignee: Panasonic Corporation
    Inventors: Mitsuaki Oya, Toshiya Yokogawa, Atsushi Yamada, Ryou Kato
  • Publication number: 20130015427
    Abstract: A nitride-based semiconductor light-emitting device 100 includes: a GaN substrate 10 with an m-plane surface 12; a semiconductor multilayer structure 20 provided on the m-plane surface 12 of the GaN substrate 10; and an electrode 30 provided on the semiconductor multilayer structure 20. The electrode 30 includes an Mg layer 32 and an Ag layer 34 provided on the Mg layer 32. The Mg layer 32 is in contact with a surface of a p-type semiconductor region of the semiconductor multilayer structure 20.
    Type: Application
    Filed: September 14, 2012
    Publication date: January 17, 2013
    Applicant: PANASONIC CORPORATION
    Inventors: Mitsuaki OYA, Toshiya YOKOGAWA, Atsushi YAMADA, Akihiro ISOZAKI
  • Publication number: 20130009187
    Abstract: A nitride-based semiconductor light-emitting device 100 includes a GaN substrate 10, of which the principal surface is an m-plane 12, a semiconductor multilayer structure 20 that has been formed on the m-plane 12 of the GaN-based substrate 10, and an electrode 30 arranged on the semiconductor multilayer structure 20. The electrode 30 includes an Mg alloy layer 32 which is formed of Mg and a metal that makes an alloy with Mg less easily than Au. The Mg alloy layer 32 is in contact with a surface of a p-type semiconductor region of the semiconductor multilayer structure 20.
    Type: Application
    Filed: September 14, 2012
    Publication date: January 10, 2013
    Applicant: PANASONIC CORPORATION
    Inventors: Mitsuaki OYA, Toshiya YOKOGAWA, Atsushi YAMADA, Ryou KATO
  • Publication number: 20130001513
    Abstract: A nitride-based semiconductor device includes: a semiconductor multilayer structure 20 including a p-type GaN-based semiconductor region whose surface 12 is inclined by an angle of not less than 1° and not more than 5° or the principal surface has a plurality of m-plane steps; and an electrode 30 that is provided on the p-type semiconductor region. The p-type semiconductor region is made of an AlxInyGazN (where x+y+z=1, x?0, y?0, and z?0) layer 26. The electrode 30 includes a Zn layer 32, and the Zn layer 32 is in contact with the surface of the p-type semiconductor region of the semiconductor multilayer structure 20.
    Type: Application
    Filed: September 11, 2012
    Publication date: January 3, 2013
    Applicant: PANASONIC CORPORATION
    Inventors: Toshiya YOKOGAWA, Mitsuaki OYA, Atsushi YAMADA, Akihiro ISOZAKI
  • Publication number: 20120326161
    Abstract: An exemplary nitride-based semiconductor device includes: a semiconductor multilayer structure 20 which includes a p-type semiconductor region with a surface 12 being inclined from the m-plane by an angle of not less than 1° and not more than 5° or the principal surface has a plurality of m-plane steps; and an electrode 30 provided on the p-type semiconductor region. The p-type semiconductor region is formed by an AlxInyGazN (where x+y+z=1, x?0, y?0, and z>0) layer 26. The electrode 30 includes a Zn layer 32 and a Ag layer 34 provided on the Zn layer 32. The Zn layer is in contact with the surface 12 of the p-type semiconductor region of the semiconductor multilayer structure 20.
    Type: Application
    Filed: August 29, 2012
    Publication date: December 27, 2012
    Applicant: PANASONIC CORPORATION
    Inventors: Toshiya YOKOGAWA, Mitsuaki OYA, Atsushi YAMADA, Akihiro ISOZAKI
  • Publication number: 20120319156
    Abstract: An exemplary nitride-based semiconductor device includes: a nitride-based semiconductor multilayer structure 20 which has a p-type GaN-based semiconductor region whose surface 12 is inclined from the m-plane by an angle of not less than 1° and not more than 5° or the principal surface has a plurality of m-plane steps; and an electrode 30 that is arranged on the p-type GaN-based semiconductor region. The electrode 30 includes a Mg alloy layer 32 which is formed from Mg and metal selected from a group consisting of Pt, Mo, and Pd. The Mg alloy layer 32 is in contact with the surface 12 of the p-type GaN-based semiconductor region of the semiconductor multilayer structure 20.
    Type: Application
    Filed: August 28, 2012
    Publication date: December 20, 2012
    Applicant: PANASONIC CORPORATION
    Inventors: Toshiya YOKOGAWA, Mitsuaki OYA, Atsushi YAMADA, Ryou KATO
  • Patent number: 8334199
    Abstract: A nitride-based semiconductor light-emitting device 100 includes: a GaN substrate 10 with an m-plane surface 12; a semiconductor multilayer structure 20 provided on the m-plane surface 12 of the GaN substrate 10; and an electrode 30 provided on the semiconductor multilayer structure 20. The electrode 30 includes a Zn layer 32 and an Ag layer 34 provided on the Zn layer 32. The Zn layer 32 is in contact with a surface of a p-type semiconductor region of the semiconductor multilayer structure 20.
    Type: Grant
    Filed: March 17, 2010
    Date of Patent: December 18, 2012
    Assignee: Panasonic Corporation
    Inventors: Mitsuaki Oya, Toshiya Yokogawa, Atsushi Yamada, Akihiro Isozaki
  • Patent number: 8318594
    Abstract: A nitride-based semiconductor light-emitting device 100 includes: a GaN substrate 10 with an m-plane surface 12; a semiconductor multilayer structure 20 provided on the m-plane surface 12 of the GaN substrate 10; and an electrode 30 provided on the semiconductor multilayer structure 20. The electrode 30 includes an Mg layer 32 and an Ag layer 34 provided on the Mg layer 32. The Mg layer 32 is in contact with a surface of a p-type semiconductor region of the semiconductor multilayer structure 20.
    Type: Grant
    Filed: March 17, 2010
    Date of Patent: November 27, 2012
    Assignee: Panasonic Corporation
    Inventors: Mitsuaki Oya, Toshiya Yokogawa, Atsushi Yamada, Akihiro Isozaki