Abstract: A liquid crystal display device includes at least one scanning signal line extending in a first direction, at least one data signal line intersecting with the at least one scanning signal line, and a pixel including a pixel electrode, a common electrode opposite the pixel electrode, and a liquid crystal layer. The common electrode includes a slit, and the slit is arranged in a region overlapping the pixel electrode, the slit includes a slit center portion extending in a straight line at a first angle with respect to the first direction, the at least one data signal line includes a portion adjacent to the slit center portion and extends at a second angle with respect to the first direction, and the first angle and the second angle are different.

Abstract: A display device is provided and includes first signal line between first and second pixel areas in first direction; first switching element in first pixel area, first switching element including first relay electrode in first pixel area; second switching element in second pixel area, second switching element including second relay electrode in second pixel area; first pixel electrode in the first pixel area; and second pixel electrode in second pixel area, wherein first pixel electrode includes first connector, second pixel electrode includes second connector, first and second connectors are arranged in first direction with first signal line interposed therebetween, gap width between first connector and first signal line is different from gap width between first signal line and second connector, and gap width between first relay electrode and first signal line is different from gap width between first signal line and second relay electrode.

Abstract: A semiconductor device including: one or more pieces of first wiring having a main wiring section and a bifurcation wiring section; one or a plurality of pieces of second wiring having a trunk wiring section and a plurality of branch wiring sections within a gap region between the main wiring section and the bifurcation wiring section; one or a plurality of transistors each divided and formed into a plurality of pieces, the plurality of branch wiring sections individually functioning as a gate electrode and the one or plurality of transistors having a source region formed within the main wiring section and within the bifurcation wiring section and having a drain region formed between the plurality of branch wiring sections; and one or a plurality of pieces of third wiring electrically connected to the drain region of the one or plurality of transistors.

Abstract: A display device is provided and includes first signal line between first and second pixel areas in first direction; first switching element in first pixel area, first switching element including first relay electrode in first pixel area; second switching element in second pixel area, second switching element including second relay electrode in second pixel area; first pixel electrode in the first pixel area; and second pixel electrode in second pixel area, wherein first pixel electrode includes first connector, second pixel electrode includes second connector, first and second connectors are arranged in first direction with first signal line interposed therebetween, gap width between first connector and first signal line is different from gap width between first signal line and second connector, and gap width between first relay electrode and first signal line is different from gap width between first signal line and second relay electrode.

Abstract: According to one embodiment, a display device including a first signal line positioned between a first and second pixel area, a common electrode, a first and second switching element, a first and second pixel electrode, wherein the first pixel electrode includes a first connector, the second pixel electrode includes a second connector and a second projection, the common electrode includes an opening, the first and second connector are arranged with the first signal line interposed therebetween, the second projection is disposed in the first direction between the first signal line and the second connector, and a first gap is different from a second gap.

Abstract: A semiconductor device including: one or more pieces of first wiring having a main wiring section and a bifurcation wiring section; one or a plurality of pieces of second wiring having a trunk wiring section and a plurality of branch wiring sections within a gap region between the main wiring section and the bifurcation wiring section; one or a plurality of transistors each divided and formed into a plurality of pieces, the plurality of branch wiring sections individually functioning as a gate electrode and the one or plurality of transistors having a source region formed within the main wiring section and within the bifurcation wiring section and having a drain region formed between the plurality of branch wiring sections; and one or a plurality of pieces of third wiring electrically connected to the drain region of the one or plurality of transistors.

Abstract: A semiconductor device including: one or more pieces of first wiring having a main wiring section and a bifurcation wiring section; one or a plurality of pieces of second wiring having a trunk wiring section and a plurality of branch wiring sections within a gap region between the main wiring section and the bifurcation wiring section; one or a plurality of transistors each divided and formed into a plurality of pieces, the plurality of branch wiring sections individually functioning as a gate electrode and the one or plurality of transistors having a source region formed within the main wiring section and within the bifurcation wiring section and having a drain region formed between the plurality of branch wiring sections; and one or a plurality of pieces of third wiring electrically connected to the drain region of the one or plurality of transistors.

Abstract: According to one embodiment, a display device including a first signal line positioned between a first and second pixel area, a common electrode, a first and second switching element, a first and second pixel electrode, wherein the first pixel electrode includes a first connector, the second pixel electrode includes a second connector and a second projection, the common electrode includes an opening, the first and second connector are arranged with the first signal line interposed therebetween, the second projection is disposed in the first direction between the first signal line and the second connector, and a first gap is different from a second gap.

Abstract: A semiconductor device including: one or more pieces of first wiring having a main wiring section and a bifurcation wiring section; one or a plurality of pieces of second wiring having a trunk wiring section and a plurality of branch wiring sections within a gap region between the main wiring section and the bifurcation wiring section; one or a plurality of transistors each divided and formed into a plurality of pieces, the plurality of branch wiring sections individually functioning as a gate electrode and the one or plurality of transistors having a source region formed within the main wiring section and within the bifurcation wiring section and having a drain region formed between the plurality of branch wiring sections; and one or a plurality of pieces of third wiring electrically connected to the drain region of the one or plurality of transistors.

Abstract: A semiconductor device including: one or more pieces of first wiring having a main wiring section and a bifurcation wiring section; one or a plurality of pieces of second wiring having a trunk wiring section and a plurality of branch wiring sections within a gap region between the main wiring section and the bifurcation wiring section; one or a plurality of transistors each divided and formed into a plurality of pieces, the plurality of branch wiring sections individually functioning as a gate electrode and the one or plurality of transistors having a source region formed within the main wiring section and within the bifurcation wiring section and having a drain region formed between the plurality of branch wiring sections; and one or a plurality of pieces of third wiring electrically connected to the drain region of the one or plurality of transistors.

Abstract: A semiconductor device including: one or more pieces of first wiring having a main wiring section and a bifurcation wiring section; one or a plurality of pieces of second wiring having a trunk wiring section and a plurality of branch wiring sections within a gap region between the main wiring section and the bifurcation wiring section; one or a plurality of transistors each divided and formed into a plurality of pieces, the plurality of branch wiring sections individually functioning as a gate electrode and the one or plurality of transistors having a source region formed within the main wiring section and within the bifurcation wiring section and having a drain region formed between the plurality of branch wiring sections; and one or a plurality of pieces of third wiring electrically connected to the drain region of the one or plurality of transistors.

Abstract: A semiconductor device including: one or more pieces of first wiring having a main wiring section and a bifurcation wiring section; one or a plurality of pieces of second wiring having a trunk wiring section and a plurality of branch wiring sections within a gap region between the main wiring section and the bifurcation wiring section; one or a plurality of transistors each divided and formed into a plurality of pieces, the plurality of branch wiring sections individually functioning as a gate electrode and the one or plurality of transistors having a source region formed within the main wiring section and within the bifurcation wiring section and having a drain region formed between the plurality of branch wiring sections; and one or a plurality of pieces of third wiring electrically connected to the drain region of the one or plurality of transistors.

Abstract: A semiconductor device including: one or more pieces of first wiring having a main wiring section and a bifurcation wiring section; one or a plurality of pieces of second wiring having a trunk wiring section and a plurality of branch wiring sections within a gap region between the main wiring section and the bifurcation wiring section; one or a plurality of transistors each divided and formed into a plurality of pieces, the plurality of branch wiring sections individually functioning as a gate electrode and the one or plurality of transistors having a source region formed within the main wiring section and within the bifurcation wiring section and having a drain region formed between the plurality of branch wiring sections; and one or a plurality of pieces of third wiring electrically connected to the drain region of the one or plurality of transistors.

Abstract: Disclosed herein is a semiconductor device including: one or a plurality of pieces of first wiring having a main wiring section and a bifurcation wiring section; one or a plurality of pieces of second wiring having a trunk wiring section and a plurality of branch wiring sections within a gap region between the main wiring section and the bifurcation wiring section; one or a plurality of transistors each divided and formed into a plurality of pieces, the plurality of branch wiring sections individually functioning as a gate electrode and the one or plurality of transistors having a source region formed within the main wiring section and within the bifurcation wiring section and having a drain region formed between the plurality of branch wiring sections; and one or a plurality of pieces of third wiring electrically connected to the drain region of the one or plurality of transistors.

Abstract: Disclosed herein is a semiconductor device including: one or a plurality of pieces of first wiring having a main wiring section and a bifurcation wiring section; one or a plurality of pieces of second wiring having a trunk wiring section and a plurality of branch wiring sections within a gap region between the main wiring section and the bifurcation wiring section; one or a plurality of transistors each divided and formed into a plurality of pieces, the plurality of branch wiring sections individually functioning as a gate electrode and the one or plurality of transistors having a source region formed within the main wiring section and within the bifurcation wiring section and having a drain region formed between the plurality of branch wiring sections; and one or a plurality of pieces of third wiring electrically connected to the drain region of the one or plurality of transistors.