Abstract: A nonvolatile magnetic memory device includes a magnetoresistance effect element that includes: a layered structure having a recording layer; a first wiring electrically connected to a lower part of the layered structure; a second wiring electrically connected to an upper part of the layered structure; and an interlayer insulation layer surrounding the layered structure. The magnetoresistance effect element further includes a low Young modulus region having a Young modulus lower than that of a material forming the interlayer insulation layer. The recording layer has an easy magnetization axis, and a hard magnetization axis orthogonal to the easy magnetization axis. When the magnetostriction constant ? of a material forming the recording layer is a positive value or a negative value, the low Young modulus region is disposed in an extension region of the easy magnetization axis or in an extension region of the hard magnetization axis of the recording layer, respectively.