Abstract: A semiconductor integrated circuit that has a quick response to changes in source/drain electrode voltage having an LDMOS transistor. The transistor has a second conduction type first well region formed in a first conduction type semiconductor substrate; a first conduction type second well region formed in the first well region; a second conduction type third well region formed in the second well region; a drain region formed in the second well region; a source region formed in the third well region; a gate electrode formed through a gate insulating film over the third well region between the drain region and the source region; and an insulating layer formed between the gate electrode and the drain region. Parasitic capacitances between the semiconductor substrate and the source region and those between the substrate and the drain region are respectively in series.

Abstract: A semiconductor integrated circuit that has a quick response to changes in source/drain electrode voltage having an LDMOS transistor. The transistor has a second conduction type first well region formed in a first conduction type semiconductor substrate; a first conduction type second well region formed in the first well region; a second conduction type third well region formed in the second well region; a drain region formed in the second well region; a source region formed in the third well region; a gate electrode formed through a gate insulating film over the third well region between the drain region and the source region; and an insulating layer formed between the gate electrode and the drain region. Parasitic capacitances between the semiconductor substrate and the source region and those between the substrate and the drain region are respectively in series.