Abstract: A semiconductor device and a method of manufacturing such a semiconductor device having a field effect transistor with improved current driving performance (e.g., an increase of drain current) of the field effect transistor comprising the steps of ion implanting an element from the main surface to the inside of a silicon layer as a semiconductor substrate to a level shallower than the implantation depth of the impurities in the step of forming the semiconductor region before the step of ion implanting impurities from the main surface to the inside of the silicon layer as a semiconductor substrate to form the semiconductor region being aligned with the gate electrode.

Abstract: A semiconductor device and a method of manufacturing such a semiconductor device having a field effect transistor with improved current driving performance (e.g., an increase of drain current) of the field effect transistor comprising the steps of ion implanting an element from the main surface to the inside of a silicon layer as a semiconductor substrate to a level shallower than the implantation depth of the impurities in the step of forming the semiconductor region before the step of ion implanting impurities from the main surface to the inside of the silicon layer as a semiconductor substrate to form the semiconductor region being aligned with the gate electrode.

Abstract: A semiconductor device and a method of manufacturing such a semiconductor device having a field effect transistor with improved current driving performance (e.g., an increase of drain current) of the field effect transistor comprising the steps of ion implanting an element from the main surface to the inside of a silicon layer as a semiconductor substrate to a level shallower than the implantation depth of the impurities in the step of forming the semiconductor region before the step of ion implanting impurities from the main surface to the inside of the silicon layer as a semiconductor substrate to form the semiconductor region being aligned with the gate electrode.

Abstract: A method of manufacturing a semiconductor device having a field effect transistor with improved current driving performance (increase of drain current) includes the steps of ion implanting a group IV element from the main surface to the inside of a silicon layer serving as a semiconductor substrate to a level shallower than the implantation depth of the impurities in the step of forming the semiconductor region before the step of ion implanting impurities from the main surface to the inside of the silicon layer serving as a semiconductor substrate so as to form a semiconductor region which is aligned with the gate electrode.

Abstract: A method of manufacturing a semiconductor device having a field effect transistor with improved current driving performance (increase of drain current) of a field effect transistor comprising the steps of ion implanting a group IV element from the main surface to the inside of a silicon layer as a semiconductor substrate to a level shallower than the implantation depth of the impurities in the step of forming the semiconductor region before the step of ion implanting impurities from the main surface to the inside of the silicon layer as a semiconductor substrate to form the semiconductor region being aligned with the gate electrode.

Abstract: The present invention relates to an ion implantation process in a wafer process for a semiconductor integrated circuit device. Particularly, according to the present invention, a shallow junction can be formed by performing the implantation of ion while holding a wafer to be processed at a low temperature.

Abstract: An ion injecting apparatus and a process for fabricating a semiconductor integrated circuit device by using the ion implanting apparatus is provided. When a wafer, e.g., a Si wafer, is to be implanted with ions, an electrode or the like made of a highly pure Si material is used to achieve a high throughput and a high density implantation. This serves to prevent the occurrence of contamination due to sputtering of the electrode member along the beam passage in the ion implanting apparatus during the high density beam implantation.