Abstract: In one embodiment, a method of manufacturing a semiconductor device includes etching a film with etching gas that includes a chain hydrocarbon compound expressed as CxHyFz where C, H and F respectively denote carbon, hydrogen and fluorine, “x” denotes an integer of three or more, and “y” and “z” respectively denote integers of one or more. Furthermore, the CxHyFz is the chain hydrocarbon compound in which each of terminal carbon atoms on a carbon chain of the chain hydrocarbon compound is bonded only to fluorine atoms out of hydrogen and fluorine atoms.

Abstract: Provided is a plasma etching method that enables, in a semiconductor fabrication process, selective processing of a film consisting of a single material, such as SiO2 or SiN, or a composite material of SiO2 and SiN over a mask material as well as processing into satisfactorily vertical processed shapes.

Abstract: Provided is a plasma etching method that enables, in a semiconductor fabrication process, selective processing of a film consisting of a single material, such as SiO2 or SiN, or a composite material of SiO2 and SiN over a mask material as well as processing into satisfactorily vertical processed shapes It is possible, for example, to enhance selectivity over a mask material or other materials excluding an etching target, to reduce damage on sidewalls, and to suppress etching in the lateral direction by generating a plasma of a gas compound having a thioether skeleton represented by general formula (1) or a mixed gas thereof and etching a film consisting of a composite material or a single material, such as SiO2 or SiN, thereby depositing a protective film that contains sulfur atoms and has a lower content of fluorine atoms than the cases of using common hydrofluorocarbon gases.

Abstract: In one embodiment, a method of manufacturing a semiconductor device includes etching a film with etching gas that includes a chain hydrocarbon compound expressed as CxHyFz where C, H and F respectively denote carbon, hydrogen and fluorine, “x” denotes an integer of three or more, and “y” and “z” respectively denote integers of one or more. Furthermore, the CxHyFz is the chain hydrocarbon compound in which each of terminal carbon atoms on a carbon chain of the chain hydrocarbon compound is bonded only to fluorine atoms out of hydrogen and fluorine atoms.

Abstract: An object of the present invention is to provide a simple, low-cost, and industrial method of producing a compound having a polyene skeleton containing hydrogen and fluorine and/or chlorine. A method of producing a. halogenated diene represented by formula (1): A1A2C=CA3-CA4=CA5A6 [A1, A2, A5, and A6 are each independently hydrogen, fluorine, chlorine, a (perfluoro)alkyl group having 1 to 3 carbon atoms, or a (perfluoro)alkenyl group; A3 and A4 are each independently hydrogen, fluorine, or chlorine; at least one of A1 to A6 is hydrogen; at least one of A1 to A6 is fluorine or chlorine] comprises a step of subjecting the same or different halogenated olefin(s) represented by for (2): A7A8C=CA9X [A7 and A8 are each independently hydrogen, fluorine, chlorine, a (perfluoro)alkyl group having 1 to 3 carbon atoms, or a (perfluoro)alkenyl group; A9 is each independently hydrogen, fluorine, or chlorine; X is bromine or iodine] to a coupling reaction in the presence of a zero-valent metal.