Abstract: A chemically amplified resist including base resin represented by a general formula [1], a radiation-sensitive acid generator; polystyrene acting as a filler and a solvent dissolving the resin, the acid generator and the filler; wherein a content of the resin is between 10 and 20% in weight with respect to the entire chemically amplified resist, contents of the acid generator and the filler are between 1 and 15% in weight and between 0.5 and 6.0% in weight, respectively, with respect to the resin, and a balance is the solvent.

Abstract: A resist resin has a molecular structure in which protecting groups bond to a base resin such that elimination of the protecting groups from the resist resin increases its alkali-solubility.

Abstract: Provided is a chemically amplified resist composition comprising a photoacid generator and an acid sensitive resin which has a huge molecular weight and from which the dissolution controlling group is cleaved owing to the decomposition of the partially crosslinked structure by the acid released from the photoacid generator. By the above-described composition, ultrafine processing can be carried out with improved focal depth, whereby an excellent rectangular pattern can be formed.

Abstract: Provided is a chemically amplified resist composition comprising a photoacid generator which releases, by exposure to light, an acid containing both a sulfonic acid group and a carboxyl group; and an acid sensitive resin which contains a dissolution controlling group to be cleaved therefrom by the action of the acid, thereby forming a carboxy-containing alkali soluble resin; or a chemically amplified resist composition comprising a photoacid generator and an acid sensitive resin which has a huge molecular weight and from which the dissolution controlling group is cleaved owing to the decomposition of the partially crosslinked structure by the acid released from the photoacid generator. By the above-described composition, ultrafine processing can be carried out with improved focal depth, whereby an excellent rectangular pattern can be formed.

Abstract: Provided is a chemically amplified resist composition comprising a photoacid generator which releases, by exposure to light, an acid containing both a sulfonic acid group and a carboxyl group; and an acid sensitive resin which contains a dissolution controlling group to be cleaved therefrom by the action of the acid, thereby forming a carboxy-containing alkali soluble resin; or a chemically amplified resist composition comprising a photoacid generator and an acid sensitive resin which has a huge molecular weight and from which the dissolution controlling group is cleaved owing to the decomposition of the partially crosslinked structure by the acid released from the photoacid generator. By the above-described composition, ultrafine processing can be carried out with improved focal depth, whereby an excellent rectangular pattern can be formed.

Abstract: The whole surface of a resist pattern having a line width greater than a desired line width is exposed with an exposure amount equal to the amount for penetrating through the resist pattern or less. After heat treatment, a developer soluble portion is dissolved and removed by development for 5 seconds to obtain a resist pattern having a desired line width.

Abstract: A chemically amplified resist including base resin represented by a general formula [1], a radiation-sensitive acid generator; polystyrene acting as a filler and a solvent dissolving the resin, the acid generator and the filler; wherein a content of the resin is between 10 and 20% in weight with respect to the entire chemically amplified resist, contents of the acid generator and the filler are between 1 and 15% in weight and between 0.6 and 6.0% in weight, respectively, with respect to the resin, and a balance is the solvent. The chemically amplified resist having the excellent controllability with respect to dimensions and shapes can be obtained because a free volume of the chemically amplified resist is reduced by filling a free volume in the chemically amplified resist with the filler.

Abstract: A far-ultraviolet resist is a chemically amplified resist comprising a base resin and a photoacid generator. As the base resin, used are resins having a cyclic carbonate bonded by an amid bond, which is highly transparent to the far-ultraviolet radiation and is excellent in resistance to etching. These resins include t-butyl protective poly(2,5-carboxy nor-bornane amide), t-butyl protective poly(p-carboxy amino-cyclohexane amide), and t-butyl protective poly(2,5-carboxy amino-adamantane amide). These resins provide excellent adhesion to Si substrates, improved resistance to dragging and placement after exposure, and improved pattern shapes.

Abstract: In formation of a resist pattern using a chemical amplification type resist, a conspicuous sparingly soluble surface layer and film reduction are suppressed by controlling the ammonia concentration in the exposure/development atmosphere to the range of 2 to 9 ppb, thereby eliminating formation of a T-shaped resist pattern and film reduction. With this method, formation of the T-shaped resist pattern and film reduction are almost completely eliminated, so a rectangular resist pattern can be obtained, and additionally, the focal depth and dimensional accuracy can be improved.

Abstract: An object of the present invention is to inhibit a size difference possibly caused due to different pattern densities, and at the same time to form a desired resist having fewer irregularities on the side walls thereof, all with respect to a chemically amplified negative type resist. In order to achieve the object, a resist material of the present invention comprises a resin for forming the resist material, a first photo-acid generating agent having a molecular weight of 100-1000 and capable of producing an acid having a diffusion length of 10-30 nm, a second photo-acid generating agent having a molecular weight of 100-1000 and capable of producing an acid having a diffusion length of 30-60 nm. In particular, a mixing ratio for mixing the second photo-acid generating agent into the first photo-acid generating agent is 5-95 mol %, a mixing ratio for mixing a total amount of the first and second photo-acid generating agents into the resin is 1-15 wt %.

Abstract: The inhibition of reverse reactions of a protecting group elimination reaction, to thereby increase the dissolution contrast and resolution, is considered. The disclosed chemical amplification photoresist includes a base resin which is insoluble in a basic developer in the state in which a protecting group is attached to a predetermined site thereof but is soluble in the basic developer in the state in which the protecting group is eliminated therefrom, a photochemical acid generator which generates a hydrogen ion upon exposure to light, and a reverse reaction inhibitor. The reaction of a hydrogen ion generated by the photochemical acid generator with the base resin eliminates the protecting group, which renders the base resin soluble in the basic developer, with concomitant generation of a new hydrogen ion, so that solubilization of the photoresist in the basic developer is amplified. The reverse reaction inhibitor inhibits recombination of the eliminated protecting group with the base resin.

Abstract: When an underlying layer with a step is covered with a photo resist layer, the photo resist layer has a thick portion and a thin portion, and the difference in thickness causes a pattern extending over the step to be deformed due to influences of a standing wave; in order to prevent a pattern of a photo resist layer extending over an underlying layer with a step, the photo resist layer is regulated in such a manner that a difference between a target thickness of the thick portion and a certain thickness at an extreme value of a critical dimension on a characteristic curve is approximately equal to a difference between a target thickness of the thin portion and the certain thickness, then the influence of the standing wave becomes equivalent between the thick portion and the thin portion, and the pattern is prevented from the deformations.