Abstract: A semiconductor device includes a differential amplifier, a current mirror circuit and a control current supply circuit. The amplifier has a first and a second transistor forming an input differential pair, the first transistor having a first gate and a first and a second impurity diffusion layer, the second transistor having a second gate and a third and a fourth impurity diffusion layer. The current mirror circuit has a third and a fourth transistor, the third transistor having a third gate and a fifth and a sixth impurity diffusion layer, the fourth transistor having a fourth gate and a seventh and an eighth impurity diffusion layer. The control current supply circuit has a non-volatile memory transistor having a control gate, a charge accumulating layer and a ninth and a tenth impurity diffusion layer. The first and the fifth impurity diffusion layers and the third and the fourth gates are connected to each other via a first wiring layer.