Abstract: There is provided a pneumatic booster, comprising: a front shell; a rear shell; a housing formed as that respective openings of the front shell and the rear shell are integrally connected to each other, and a power piston arranged in the housing so as to divide an interior of the housing into a constant-pressure chamber on the front shell side and a working-pressure chamber on the rear shell side, wherein thrust force of the power piston generated by pressure difference between the constant-pressure chamber and the working-pressure chamber is applied to inputted force transmitted from a brake pedal to an input rod so as to obtain combined force, the combined force being outputted with a given boost ratio from an output rod, and wherein a thickness of the front shell is made to be thinner than a thickness of the rear shell.

Abstract: This dry cleaning method for a plasma processing apparatus is a dry cleaning method for a plasma processing apparatus that includes: a vacuum container provided with a dielectric member; a planar electrode and a high-frequency antenna that are provided outside the dielectric member; and a high-frequency power source that supplies high-frequency power to both the high-frequency antenna and the planar electrode, to thereby introduce high-frequency power into the vacuum container via the dielectric member and produce an inductively-coupled plasma, the method comprising the steps of: introducing a gas including fluorine into the vacuum container and also introducing high-frequency power into the vacuum container from the high-frequency power source, to thereby produce an inductively-coupled plasma in the gas including fluorine; and by use of the inductively-coupled plasma, removing a product including at least one of a precious metal and a ferroelectric that is adhered to the dielectric member.

Abstract: An etching method which uses an apparatus having a chamber in which an etching gas is excited by plasma; a table arranged in the chamber which heats a substrate mounted thereon; and a frame member which includes etching-endurable material which is arranged around the table, and which has an upper surface arranged at a position lower than an upper surface of the table, the etching method including: arranging the substrate on the upper surface of the table such that a peripheral part of the substrate projects above the table; and arranging the substrate such that a ratio of a height from the upper surface of the frame member to a bottom surface of the substrate and a projecting length from a side surface of the table to an outer circumference of the substrate is 1.

Abstract: A plasma processing apparatus of the present invention performs on a substrate to be processed, plasma processing with a noble metal material and a ferroelectric material and is provided with a constituent member that is exposed to plasma while being heated. The constituent member is formed with an aluminum alloy of at least 99% aluminum purity.

Abstract: There is provided a pneumatic booster, comprising: a front shell; a rear shell; a housing formed as that respective openings of the front shell and the rear shell are integrally connected to each other, and a power piston arranged in the housing so as to divide an interior of the housing into a constant-pressure chamber on the front shell side and a working-pressure chamber on the rear shell side, wherein thrust force of the power piston generated by pressure difference between the constant-pressure chamber and the working-pressure chamber is applied to inputted force transmitted from a brake pedal to an input rod so as to obtain combined force, the combined force being outputted with a given boost ratio from an output rod, and wherein a thickness of the front shell is made to be thinner than a thickness of the rear shell.

Abstract: This dry cleaning method for a plasma processing apparatus is a dry cleaning method for a plasma processing apparatus that includes: a vacuum container provided with a dielectric member; a planar electrode and a high-frequency antenna that are provided outside the dielectric member; and a high-frequency power source that supplies high-frequency power to both the high-frequency antenna and the planar electrode, to thereby introduce high-frequency power into the vacuum container via the dielectric member and produce an inductively-coupled plasma, the method comprising the steps of: introducing a gas including fluorine into the vacuum container and also introducing high-frequency power into the vacuum container from the high-frequency power source, to thereby produce an inductively-coupled plasma in the gas including fluorine; and by use of the inductively-coupled plasma, removing a product including at least one of a precious metal and a ferroelectric that is adhered to the dielectric member.

Abstract: A silicon wafer cleaning method, comprising a first cleaning process, in which, after completion of mirror polishing of the surface, the silicon wafer is immersed in a non-ionic surfactant aqueous solution; a second cleaning process, in which the wafer, after completion of the first cleaning process, is immersed in a dissolved-ozone aqueous solution; and, a third cleaning process, in which the wafer, after completion of the second cleaning process, is immersed in an aqueous solution containing ammonia and hydrogen peroxide; and in which the processes are performed in succession.

Abstract: A method for manufacturing a device, includes: (A) forming a first electrode layer on a substrate; (B) forming a ferroelectric layer on the first electrode layer; (C) forming a second electrode layer on the ferroelectric layer; (D) forming a mask having a predetermined pattern on the second electrode layer; (E) forming a memory element by selectively removing the first electrode layer, the ferroelectric layer, and the second electrode layer using the mask; and (F) removing the mask, where at least, the processes (D) and (E), or the processes (E) and (F) are continuously performed under a reduced pressure.

Abstract: A silicon wafer cleaning method, comprising a first cleaning process, in which, after completion of mirror polishing of the surface, the silicon wafer is immersed in a non-ionic surfactant aqueous solution; a second cleaning process, in which the wafer, after completion of the first cleaning process, is immersed in a dissolved-ozone aqueous solution; and, a third cleaning process, in which the wafer, after completion of the second cleaning process, is immersed in an aqueous solution containing ammonia and hydrogen peroxide; and in which the processes are performed in succession.

Abstract: A pneumatic booster includes a casing, a valve body axially movably disposed in the casing and having a tubular portion extending backward to the outside of the casing and open at the rear end thereof, a set of a power piston and a diaphragm fixedly mounted on the valve body and partitioning the interior of the casing into a constant pressure chamber communicating with a negative pressure source and a variable pressure chamber adapted to selectively communicate with the negative source and the ambient air, a valve unit disposed in the tubular portion of the valve body for selectively placing the variable pressure chamber in communication with the negative pressure source and the ambient air, an input rod extending into the tubular portion of the valve body for actuating the valve unit, and an output rod connected to the valve body.

Abstract: A pneumatic servo booster including a housing, a power piston unit partitioning the interior of the housing into front and rear chambers and having therein a first passage with one end opening to the front chamber and the other end opening to the interior of the power piston unit and a second passage with one end opening to the rear chamber and the other end opening to the interior of the power piston unit, and a valve mechanism provided in the interior of the power piston unit and being associated with an input rod to control the communication between first and second passages and between the second passage and another passage which is communicated with a source of a first reference pressure. A plurality of diversion channels are provided in at least one of the first and second passages to decrease the speed of the air flow in the passage and to rectify the air flow thereby suppressing noise.

Abstract: A pneumatic booster includes a housing, a power piston and flexible diaphragm assembly partitioning the interior of the housing into two chambers, a poppet valve mechanism for selectively connecting or disconnecting communication between the two chambers and disconnecting or connecting communication between one of the chambers and a reference pressure, an input rod for actuating the poppet valve mechanism and an output rod connected to the power piston. The poppet valve mechanism includes a plunger connected to the inner end of the input rod, a valve member, a valve body having an axial bore therein for slidably receiving the plunger, and a restricting member mounted on the plunger for restricting the relative axial displacement of the plunger and the valve body. A resilient member is interposed between the restricting member and the valve body to avoid impacting abutment between the restricting member and the valve body.