Abstract: To provide a heterojunction photoelectric conversion device including passivation layers for reducing surface defects of a silicon substrate. The photoelectric conversion device includes a first silicon semiconductor layer which is in contact with one surface of a single crystal silicon substrate; a second silicon semiconductor layer which is in contact with the first silicon semiconductor layer; a third silicon semiconductor layer which is in contact with the other surface of the single crystal silicon substrate; and a fourth silicon semiconductor layer which is in contact with the third silicon semiconductor layer. Further, the fluorine concentration in the first silicon semiconductor layer and the third silicon semiconductor layer is lower than or equal to 1×1017 atoms/cm3.