Abstract: Semiconductor piezoresistive devices can be obtained by the plasma CVD method, i.e., exposing a substrate to a plasma atmosphere produced from silicon hydride gas containing boron hydride to deposit on the substrate a thin film of crystalline silicon as a piezoresistive material. In accordance with this method, it is possible to form piezoresistive devices into IC's and also to impart excellent properties thereto.

Abstract: Two resistance strain gages are secured to a cantilever beam at each of two parts thereof near its fixed end of lower rigidity than the other parts of the beam and are connected to constitute opposed arms of an electrical bridge, the free end of the beam being further supported in a manner permitting longitudinal displacement but prohibiting transverse displacement of the beam, and a mechanical quantity in the form of a mechanical force is applied to a selectively variable point on the beam, whereby the mechanical quantity is converted into a corresponding electrical quantity as the output of the bridge.