Abstract: A field effect transistor includes at least one line trench extending downward from a top surface of a channel region which laterally surrounds or underlies the at least one line trench, a gate dielectric contacting all surfaces of the at least one line trench and including a planar gate dielectric portion that extends over an entirety of a top surface of the channel region, a gate electrode, a source region, and a drain region.

Abstract: Provided is a method for producing a heat sink that can easily and effectively form a heat radiating film on the surface of a substrate without requiring enormous heat energy for increasing the temperature of the substrate. The method is a method for producing a heat sink having a substrate and a heat radiating film formed on the surface of the substrate, including a first step of casting a substrate by injecting molten metal into a cavity of molding dies; and a second step of applying a heat radiating coating to the substrate through spraying or dropping in the period from when the molding dies are opened after the casting until when the temperature of the substrate that has been cast becomes lower than the deposition temperature that is a temperature necessary to deposit the heat radiating coating on the substrate.

Abstract: Provided is a method for producing a heat sink that can easily and effectively form a heat radiating film on the surface of a substrate without requiring enormous heat energy for increasing the temperature of the substrate. The method is a method for producing a heat sink having a substrate and a heat radiating film formed on the surface of the substrate, including a first step of casting a substrate by injecting molten metal into a cavity of molding dies; and a second step of applying a heat radiating coating to the substrate through spraying or dropping in the period from when the molding dies are opened after the casting until when the temperature of the substrate that has been cast becomes lower than the deposition temperature that is a temperature necessary to deposit the heat radiating coating on the substrate.

Abstract: A light-emitting device includes a light-emitting element, a first sealing unit that covers the light-emitting element and includes a light-transmissive resin, and a second sealing unit disposed on top of the first sealing unit and includes a light-transmissive resin. The light-transmissive resin of the first and second sealing units contain phosphor of the same type but at different levels of concentration.

Abstract: According to one embodiment, a semiconductor device includes a conductive member, a semiconductor element, a sealing section. The semiconductor element is provided on an upper surface of the conductive member. The sealing section seals part of the conductive member and the semiconductor element. The upper end of the semiconductor element is located above the uppermost portion of the conductive member. The conductive member includes an inclined surface and a lower surface. The inclined surface is provided on an outside of the sealing section and makes an acute angle with the upper surface. The lower surface is provided outside the sealing section and makes an obtuse angle with the inclined surface.

Abstract: A semiconductor light-emitting device includes a substrate, a semiconductor light-emitting element, a frame body, a first translucent resin, and a second translucent resin. The substrate has a convex portion. The semiconductor light-emitting element placed on the convex portion. The frame body is provided so as to surround the convex portion. The first translucent resin covers an upper surface and a side surface of the light-emitting element, extends from the convex portion to the frame body, and contains a fluorescent body. The second translucent resin is provided on the substrate so as to bury the light-emitting element and the frame body.

Abstract: A light-emitting device includes a light-emitting element, a first sealing unit that covers the light-emitting element and includes a light-transmissive resin, and a second sealing unit disposed on top of the first sealing unit and includes a light-transmissive resin. The light-transmissive resin of the first and second sealing units contain phosphor of the same type but at different levels of concentration.

Abstract: A light emitting device may include a base provided with a recess portion in a side surface thereof, a light emitting element mounted on a main surface of the base, a first resin body filled in an inside of the recess portion, and covering at least the main surface and the light emitting element, a second resin body covering an outside of the first resin body from the main surface side to at least a position of the lowermost end of the recess portion in a direction orthogonal to the main surface, and phosphor, provided in the second resin body, for absorbing light emitted from the light emitting element and then emitting light having a different wavelength.