Abstract: A contact type image sensor has a driving circuit part which sequentially drives a plurality of photoelectric conversion elements of a photodetector in blocks which respectively have an arbitrary number of photoelectric conversion elements. The driving circuit part has a pair of shift registers, one for sequentially selecting the block and the other for sequentially selecting each of the photoelectric conversion elements within the selected block.

Abstract: A photoelectric conversion semiconductor device comprising photelectric conversion elements, selection switching elements and a driving circuit for sequentially driving the photoelectric elements. The above structural elements are formed on an insulating and transparent substrate. The driving circuit including a plurality of one-bit shift registers each having one switch and two series-connected complementary metal oxide semiconductor (CMOS) inverters. An input signal of each one-bit shift register is supplied to one of the CMOS inverters. An output signal of the other of the CMOS inverters is supplied to a next stage of the one-bit shift register. One of the output signals of the two CMOS inverters is supplied to one of the selection switching elements.

Abstract: A linear solid-state image sensor includes a first chip and a second chip, each of the first and second chips having a long substrate, a plural number of photo-responsive elements formed in a line on the substrate, an analog switch circuit driving the photo-responsive elements, and a shift register shifting signal to make the analog switch circuit successively effective. The second chip is mechanically connected to the first chip so that a shift direction of the shift register circuit is in agreement with a shift direction of the shift register circuit of the first chip.

Abstract: A method of producing a thin film transistor comprises the steps of preparing a structure having a substrate, an active layer and a diffusion layer formed on the substrate, and a gate electrode formed on the active layer, forming on the structure an interlayer insulator layer made of a silicon oxide hydrate (SiO.sub.x H.sub.y) having a predetermined composition, forming contact holes in the interlayer insulator layer, forming a wiring layer on the interlayer insulator layer, and carrying out a thermal process thereby diffusing hydrogen atoms within the interlayer insulator layer into at least the active layer and the diffusion layer.