Abstract: In a semiconductor device, each electrode pad portion is structured by a metal portion, such as a W film, buried in a recess of an oxide film and vertically extended and a pad film, such as an Al alloy film, partially contacted with the metal portion. An underlying film, such as a TiN film, underlies the pad film and the metal portion and is deposited on a conductive film, such as a Ti film, which is contacted with the oxide film and the recess of the oxide film. With this structure, peeling off can be avoided in the pad film, the underlying film, and the conductive film when a wiring line is bonded to the pad film.

Abstract: In a semiconductor device, each electrode pad portion is structured by a metal portion, such as a W film, buried in a recess of an oxide film and vertically extended and a pad film, such as an Al alloy film, partially contacted with the metal portion. An underlying film, such as a TiN film, underlies the pad film and the metal portion and is deposited on a conductive film, such as a Ti film, which is contacted with the oxide film and the recess of the oxide film. With this structure, peeling off can be avoided in the pad film, the underlying film, and the conductive film when a wiring line is bonded to the pad film.

Abstract: A lead structure is provided in a semiconductor device, having a body of a lead having at least a part of which is in contact with an adhesive which bonds with an insulation tape, and a protection layer selectively provided on the body of the lead so that the protection layer coats at least the part of the body in contact with the adhesive to completely isolate the body of the lead from the adhesive, to prevent an ion migration of a material of the body and also to prevent leakage of currents from and into the body of the lead.

Abstract: A lead frame is provided that prevents breaks in bonding wires caused by thermal stress which is applied when mounting a resin semiconductor. A plating layer is applied to the surfaces of internal leads to which bonding wires are to be connected and an insulating tape is adhered the internal lead 1 tips and bonding balls, so as to prevent peeling between the internal leads 1 and the resin, thereby preventing breaking of a bonding wire cause by stress applied during mounting. Additionally, a semiconductor device which makes use of this lead frame structure is provided.

Abstract: A lead structure includes an insulating film, a plurality of leads, and a plurality of adhesive layers separately provided on the insulating film. Two adjacent leads are fixed by adjacent adhesive layers, respectively, such that an adhesive does not exist on the insulating film between the adjacent adhesive layers. Therefore, ion migration between the leads through the adhesive layer can be prevented.

Abstract: A tape-fixed leadframe is provided, which prevents ion migration of metal contained in leads with a simple configuration. The leadframe is comprised of electrically-conductive lead fingers and an electrically-insulating tape for fixing the lead fingers. The tape includes an electrically-insulating base film and an electrically-insulating adhesive layer formed on a surface of the base film. The adhesive layer of the tape is adhered to the lead fingers, thereby fixing the lead fingers at their original positions. The adhesive layer has protruded parts located at respective sides of each of the lead fingers, intervening parts between two adjoining ones of the protruded parts, and depressed parts opposite to the lead fingers. The protruded parts are thicker than the intervening parts. The depressed parts are thinner than the intervening parts.