Abstract: [PROBLEMS] To provide a semiconductor element manufacturing method by which a semiconductor element having high accuracy and high function can be manufactured by controlling diffusion depth and diffusion concentration in a pn junction region with high accuracy. [MEANS FOR SOLVING PROBLEMS] A diffusion control layer (2) composed of a thin film of a substance having a smaller diffusion coefficient than that of a diffusion source (3) is formed between a surface of a substrate (1) and the diffusion source (3), and an element of the diffusion source (3) is permitted to thermally diffuse through the diffusion control layer (2). Thus, the diffusion depth and the diffusion concentration in the semiconductor region, which is formed on the surface portion of the substrate and has a conductivity type different from that of the substrate, can be highly accurately controlled, and the semiconductor element having high accuracy and high function can be manufactured.

Abstract: A milling tool includes a cutting tool insert, roughly plate-shaped and having a rake face on an upper face and a flank on a side face and a main cutting edge at an intersection ridge line part at the intersection of the rake face and the flank, fitted in the periphery of a substantially cylindrical holder removably and so that an axial rake angle of the cutting edge ridge line of the main cutting edge is positive. When the cutting tool insert is rotated about the axis of rotation of the holder, the shape of the locus of rotation of the main cutting edge in a section parallel to the axis of rotation is made an approximate circular arc shape swelling outward with progress from the ends to the center.

Abstract: [PROBLEMS] To provide a semiconductor element manufacturing method by which a semiconductor element having high accuracy and high function can be manufactured by controlling diffusion depth and diffusion concentration in a pn junction region with high accuracy. [MEANS FOR SOLVING PROBLEMS] A diffusion control layer (2) composed of a thin film of a substance having a smaller diffusion coefficient than that of a diffusion source (3) is formed between a surface of a substrate (1) and the diffusion source (3), and an element of the diffusion source (3) is permitted to thermally diffuse through the diffusion control layer (2). Thus, the diffusion depth and the diffusion concentration in the semiconductor region, which is formed on the surface portion of the substrate and has a conductivity type different from that of the substrate, can be highly accurately controlled, and the semiconductor element having high accuracy and high function can be manufactured.

Abstract: An apparatus for reverse iontophoresis has a base, an electrode provided on the base, an electrolytic gel provided on the electrode adapted for contacting a first part of a specimen, and for extracting a molecule from a first part of the specimen, a sensor chip placed underneath the electrolytic gel and having a pigment membrane containing a pigment that changes color by reaction with the molecule, a light source irradiating light on the pigment membrane, and a light sensor receiving a reflection of the light from the pigment membrane.

Abstract: A milling tool includes a cutting tool insert, roughly plate-shaped and having a rake face on an upper face and a flank on a side face and a main cutting edge at an intersection ridge line part at the intersection of the rake face and the flank, fitted in the periphery of a substantially cylindrical holder removably and so that an axial rake angle of the cutting edge ridge line of the main cutting edge is positive. When the cutting tool insert is rotated about the axis of rotation of the holder, the shape of the locus of rotation of the main cutting edge in a section parallel to the axis of rotation is made an approximate circular arc shape swelling outward with progress from the ends to the center.

Abstract: A milling tool includes a cutting tool insert, roughly plate-shaped and having a rake face on an upper face and a flank on a side face and a main cutting edge at an intersection ridge line part at the intersection of the rake face and the flank, fitted in the periphery of a substantially cylindrical holder removably and so that an axial rake angle of the cutting edge ridge line of the main cutting edge is positive. When the cutting tool insert is rotated about the axis of rotation of the holder, the shape of the locus of rotation of the main cutting edge in a section parallel to the axis of rotation is made an approximate circular arc shape swelling outward with progress from the ends to the center.

Abstract: A milling tool includes a cutting tool insert, roughly plate-shaped and having a rake face on an upper face and a flank on a side face and a main cutting edge at an intersection ridge line part at the intersection of the rake face and the flank, fitted in the periphery of a substantially cylindrical holder removably and so that an axial rake angle of the cutting edge ridge line of the main cutting edge is positive. When the cutting tool insert is rotated about the axis of rotation of the holder, the shape of the locus of rotation of the main cutting edge in a section parallel to the axis of rotation is made an approximate circular arc shape swelling outward with progress from the ends to the center.

Abstract: An apparatus for reverse iontophoresis has a base, an electrode provided on the base, an electrolytic gel provided on the electrode adapted for contacting a first part of a specimen, and for extracting a molecule from a first part of the specimen, a sensor chip placed underneath the electrolytic gel and having a pigment membrane containing a pigment that changes color by reaction with the molecule, a light source irradiating light on the pigment membrane, and a light sensor receiving a reflection of the light from the pigment membrane

Abstract: A metal vapor laser apparatus of this invention includes at least two high reflecting mirrors arranged one near each side end portion of a discharge tube, heating units for heating the high reflecting mirrors, and transmission windows formed to transmit a laser beam reflected by the high reflecting mirrors.