Abstract: A method for fabricating a dielectric memory device is carried out in the following manner. A first lower electrode is formed above a substrate, and then a first insulating film is formed on the first lower electrode. Through the first insulating film, a hole is formed which reaches an upper surface of the first lower electrode, and then a conductive film is formed on at least the sides and bottom of the hole. Etching is performed to remove a portion of the conductive film located on the bottom of the hole, thereby forming a second lower electrode made of the conductive film remaining on the sides of the hole. On the first and second lower electrodes, a capacitor insulating film is formed so that the hole is not fully filled with the film; and then an upper electrode is formed on the capacitor insulating film.

Abstract: When the Cu-containing aluminum film is dry-etched with etching gas containing chlorine gas, the gas stay time ? of the etching gas staying in the chamber, which is expressed by P·V/Q, where P being the chamber pressure (unit: Pa), V the chamber volume (unit: L) and Q the total flow of etching gas (unit: Pa·L/sec), is from 0.15 seconds to 0.30 seconds inclusive.

Abstract: When the Cu-containing aluminum film is dry-etched with etching gas containing chlorine gas, the gas stay time &tgr; of the etching gas staying in the chamber, which is expressed by P·V/Q, where P being the chamber pressure (unit: Pa), V the chamber volume (unit: L) and Q the total flow of etching gas (unit: Pa·L/sec), is from 0.15 seconds to 0.30 seconds inclusive.

Abstract: A plasma generating apparatus includes a vacuum chamber having an insulated inner surface, more than two electrodes arranged on the insulated inner surface of the vacuum chamber, a high frequency applying device for applying high frequencies having different phases in order of positions of the electrodes, and a holder on which an object to be processed is placed. In the apparatus, a magnetic field is produced under plural alternating electric fields, so that electrons in a plasma generating portion are rotated to generate high density plasma under a high vacuum when the high frequencies are applied to the electrodes to generate the plasma and a specified process such as etching, CVD, or doping is carried on the object by reaction products generated at the portion.

Abstract: A scanning electron microscope is disclosed in which an objective lens includes a first pole piece and a second pole piece. The first pole piece is provided with a hole through which an electron beam passes, and is disposed between an electron gun for emitting the electron beam and the second pole piece. The second pole piece has a planar portion on which a specimen is placed, and the second pole piece being mounted on a supporting block movable in a plane substantially perpendicular to the projecting direction of the electron beam.