Patents by Inventor Mitsuhiro Sawada

Mitsuhiro Sawada has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor electroluminescent device with a multiple-quantum well layer formed therein
    Patent number: 8610105
    Abstract: Provided is a semiconductor electroluminescent device with an InGaAlAs-based well layer having tensile strain, or a semiconductor electroluminescent device with an InGaAsP-based well layer having tensile strain and with an InGaAlAs-based barrier layer which is high-performance and highly reliable in a wide temperature range. In a multiple-quantum well layer of the semiconductor electroluminescent device, a magnitude of interface strain at an interface between the well layer and the barrier layer is smaller than a magnitude of critical interface strain determined by a layer thickness value which is larger one of a thickness of the well layer and a thickness of the barrier layer.
    Type: Grant
    Filed: November 9, 2009
    Date of Patent: December 17, 2013
    Assignee: Oclaro Japan, Inc.
    Inventors: Toshihiko Fukamachi, Takashi Shiota, Takeshi Kitatani, Nozomu Yasuhara, Atsushi Nakamura, Mitsuhiro Sawada
  • SEMICONDUCTOR ELECTROLUMINESCENT DEVICE
    Publication number: 20100288997
    Abstract: Provided is a semiconductor electroluminescent device with an InGaAlAs-based well layer having tensile strain, or a semiconductor electroluminescent device with an InGaAsP-based well layer having tensile strain and with an InGaAlAs-based barrier layer which is high-performance and highly reliable in a wide temperature range. In a multiple-quantum well layer of the semiconductor electroluminescent device, a magnitude of interface strain at an interface between the well layer and the barrier layer is smaller than a magnitude of critical interface strain determined by a layer thickness value which is larger one of a thickness of the well layer and a thickness of the barrier layer.
    Type: Application
    Filed: November 9, 2009
    Publication date: November 18, 2010
    Inventors: Toshihiko FUKAMACHI, Takashi Shiota, Takeshi Kitatani, Nozomu Yasuhara, Atsushi Nakamura, Mitsuhiro Sawada