Patents by Inventor Mitsuhiro Tachibana

Mitsuhiro Tachibana has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210104412
    Abstract: There is provided a substrate processing method which includes: treating a substrate using a fluorine-containing gas; and exposing the substrate to a moisture-containing atmosphere.
    Type: Application
    Filed: November 13, 2020
    Publication date: April 8, 2021
    Inventors: Keiko HADA, Akitaka SHIMIZU, Koichi NAGAKURA, Mitsuhiro TACHIBANA
  • Patent number: 10903083
    Abstract: There is provided a substrate processing method which includes: treating a substrate using a fluorine-containing gas; and exposing the substrate to a moisture-containing atmosphere.
    Type: Grant
    Filed: January 10, 2017
    Date of Patent: January 26, 2021
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Keiko Hada, Akitaka Shimizu, Koichi Nagakura, Mitsuhiro Tachibana
  • Patent number: 10460946
    Abstract: A technique capable of removing a natural oxide film formed on a surface of a semiconductor layer which contains a compound of indium and an element other than indium as a main ingredient, without making a temperature of the semiconductor layer relatively high. The technique includes supplying a first etching gas which is ?-diketone to the semiconductor layer and heating the semiconductor layer to remove an oxide of the indium constituting the natural oxide film; and supplying a second etching gas to the semiconductor layer and heating the semiconductor layer to remove an oxide of the element constituting the natural oxide film. By using the first etching gas, it is possible to remove the indium oxide even if the temperature of the semiconductor layer is relatively low. This eliminates the need to increase the temperature to a relatively high level when removing the natural oxide film.
    Type: Grant
    Filed: June 7, 2016
    Date of Patent: October 29, 2019
    Assignees: TOKYO ELECTRON LIMITED, CENTRAL GLASS CO., LTD.
    Inventors: Jun Lin, Koji Takeya, Shinichi Kawaguchi, Mitsuhiro Tachibana, Akifumi Yao, Kunihiro Yamauchi
  • Publication number: 20180211844
    Abstract: A technique capable of removing a natural oxide film formed on a surface of a semiconductor layer which contains a compound of indium and an element other than indium as a main ingredient, without making a temperature of the semiconductor layer relatively high. The technique includes supplying a first etching gas which is ?-diketone to the semiconductor layer and heating the semiconductor layer to remove an oxide of the indium constituting the natural oxide film; and supplying a second etching gas to the semiconductor layer and heating the semiconductor layer to remove an oxide of the element constituting the natural oxide film. By using the first etching gas, it is possible to remove the indium oxide even if the temperature of the semiconductor layer is relatively low. This eliminates the need to increase the temperature to a relatively high level when removing the natural oxide film.
    Type: Application
    Filed: June 7, 2016
    Publication date: July 26, 2018
    Inventors: Jun LIN, Koji TAKEYA, Shinichi KAWAGUCHI, Mitsuhiro TACHIBANA, Akifumi YAO, Kunihiro YAMAUCHI
  • Patent number: 9991138
    Abstract: An etching method includes a step of etching a cobalt film formed on a surface of a target object by supplying an etching gas containing ?-diketone and an oxidizing gas for oxidizing the cobalt film to the target object. The supply of the etching gas and the oxidizing gas is carried out such that a flow rate ratio of the oxidizing gas to the etching gas is ranging from 0.5% to 50% while heating the target object to a temperature lower than or equal to 250° C.
    Type: Grant
    Filed: July 25, 2016
    Date of Patent: June 5, 2018
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Jun Lin, Koji Takeya, Mitsuhiro Tachibana, Akifumi Yao, Kunihiro Yamauchi, Tatsuo Miyazaki
  • Publication number: 20170200618
    Abstract: There is provided a substrate processing method which includes: treating a substrate using a fluorine-containing gas; and exposing the substrate to a moisture-containing atmosphere.
    Type: Application
    Filed: January 10, 2017
    Publication date: July 13, 2017
    Inventors: Keiko HADA, Akitaka SHIMIZU, Koichi NAGAKURA, Mitsuhiro TACHIBANA
  • Patent number: 9583312
    Abstract: A film formation device to conduct a film formation process for a substrate includes a rotating table, a film formation area configured to include a process gas supply part, a plasma processing part, a lower bias electrode provided at a lower side of a position of a height of the substrate on the rotating table, an upper bias electrode arranged at the same position of the height or an upper side of a position of the height, a high-frequency power source part connected to at least one of the lower bias electrode and the upper bias electrode and configured to form a bias electric potential on the substrate in such a manner that the lower bias electrode and the upper bias electrode are capacitively coupled, and an exhaust mechanism.
    Type: Grant
    Filed: December 9, 2013
    Date of Patent: February 28, 2017
    Assignee: Tokyo Electron Limited
    Inventors: Jun Yamawaku, Chishio Koshimizu, Yohei Yamazawa, Mitsuhiro Tachibana, Hitoshi Kato, Takeshi Kobayashi, Shigehiro Miura, Takafumi Kimura
  • Publication number: 20170032990
    Abstract: An etching method includes a step of etching a cobalt film formed on a surface of a target object by supplying an etching gas containing ?-diketone and an oxidizing gas for oxidizing the cobalt film to the target object. The supply of the etching gas and the oxidizing gas is carried out such that a flow rate ratio of the oxidizing gas to the etching gas is ranging from 0.5% to 50% while heating the target object to a temperature lower than or equal to 250° C.
    Type: Application
    Filed: July 25, 2016
    Publication date: February 2, 2017
    Inventors: Jun LIN, Koji TAKEYA, Mitsuhiro TACHIBANA, Akifumi YAO, Kunihiro YAMAUCHI, Tatsuo MIYAZAKI
  • Patent number: 9136156
    Abstract: A substrate processing apparatus includes a processing chamber; process areas each of which supplies a reaction gas; a turntable that rotates to cause a substrate to pass through the process areas; a gas nozzle provided in one of the process areas; a separating area that supplies a separation gas to separate atmospheres of the process areas; and a cover part configured to cover the gas nozzle and cause the reaction gas supplied from the gas nozzle to remain around the gas nozzle. The cover part includes an upstream side wall, a downstream side wall, and an upper wall. The cover part also includes a guide surface configured to guide the separation gas to flow over a lower part of the upstream side wall to a space above the upper wall. The distance between the gas nozzle and the upstream side wall is greater than or equal to 8 mm.
    Type: Grant
    Filed: August 30, 2012
    Date of Patent: September 15, 2015
    Assignee: Tokyo Electron Limited
    Inventors: Tadashi Enomoto, Mitsuhiro Tachibana, Haruhiko Furuya, Kentaro Oshimo
  • Publication number: 20150240357
    Abstract: A substrate processing apparatus performing substrate processing by supplying a process gas to a circular substrate loaded on a rotatable table in a vacuum container while rotating the substrate, including: a recess formed at one side of the rotatable table to receive the substrate; a heater heating the rotatable table to heat the substrate to 600 degrees or more for processing; and six support pins disposed on a bottom surface of the recess such that the support pins are respectively placed at vertices of a regular hexagon, support the substrate at locations separated a distance of two-thirds (2/3) of a radius of the substrate from a center of the substrate, and support the substrate in a state of being raised from the bottom surface of the recess.
    Type: Application
    Filed: February 23, 2015
    Publication date: August 27, 2015
    Inventors: Mitsuhiro TACHIBANA, Yuji TAKABATAKE, Manabu HONMA
  • Patent number: 9111747
    Abstract: A film deposition apparatus configured to perform a film deposition process on a substrate in a vacuum chamber includes a turntable configured to rotate a substrate loading area to receive the substrate, a film deposition area including at least one process gas supplying part configured to supply a process gas onto the substrate loading area and configured to form a thin film by depositing at least one of an atomic layer and a molecular layer along with a rotation of the turntable, a plasma treatment part provided away from the film deposition area in a rotational direction of the turntable and configured to treat the at least one of the atomic layer and the molecular layer for modification by plasma, and a bias electrode part provided under the turntable without contacting the turntable and configured to generate bias potential to attract ions in the plasma toward the substrate.
    Type: Grant
    Filed: June 13, 2013
    Date of Patent: August 18, 2015
    Assignee: TOKYO ELECTRON LIMITED
    Inventors: Jun Yamawaku, Chishio Koshimizu, Mitsuhiro Tachibana, Hitoshi Kato, Takeshi Kobayashi, Shigehiro Miura, Takafumi Kimura
  • Publication number: 20150211119
    Abstract: A film deposition apparatus includes a vacuum chamber, and a turntable having a substrate receiving area provided in the vacuum chamber. A heating unit is provided to heat the turntable so as to heat the substrate up to 600 degrees C. or higher. A process gas supply part is provided to supply a process gas having a decomposition temperature of 520 degrees C. or lower under 1 atmospheric pressure or lower, to the substrate. A gas shower head is provided in the process gas supply part and has a plurality of gas discharge holes provided in an opposed part facing a passing area of the substrate placed on the turntable. A cooling mechanism is provided in the process gas supply part and is configured to cool the opposed part in the gas shower head up to a temperature lower than the decomposition temperature of the process gas.
    Type: Application
    Filed: January 26, 2015
    Publication date: July 30, 2015
    Inventors: Yuji ONO, Mitsuhiro TACHIBANA, Manabu HONMA
  • Patent number: 8895456
    Abstract: A method of depositing a film of forming a doped oxide film including a first oxide film containing a first element and doped with a second element on substrates mounted on a turntable including depositing the first oxide film onto the substrates by rotating the turntable predetermined turns while a first reaction gas containing the first element is supplied from a first gas supplying portion, an oxidation gas is supplied from a second gas supplying portion, and a separation gas is supplied from a separation gas supplying portion, and doping the first oxide film with the second element by rotating the turntable predetermined turns while a second reaction gas containing the second element is supplied from one of the first and second gas supplying portions, an inert gas is supplied from another one, and the separation gas is supplied from the separation gas supplying portion.
    Type: Grant
    Filed: December 18, 2013
    Date of Patent: November 25, 2014
    Assignee: Tokyo Electron Limited
    Inventors: Mitsuhiro Tachibana, Hiroaki Ikegawa, Yu Wamura, Muneyuki Otani, Jun Ogawa, Kosuke Takahashi
  • Publication number: 20140220260
    Abstract: A substrate processing apparatus for performing a plasma process inside a vacuum chamber includes a turntable including substrate mounting portions for the substrates formed along a peripheral direction of the vacuum chamber to orbitally revolve these; a plasma generating gas supplying portion supplying a plasma generating gas into a plasma generating area; an energy supplying portion supplying energy to the plasma generating gas to change the plasma generating gas to plasma; a bias electrode provided on a lower side of the turntable to face the plasma generating area and leads ions in the plasma onto surfaces of the wafers; and an evacuation port evacuating the vacuum chamber, wherein the bias electrode extends from a rotational center of the turntable to an outer edge side, and a width of the bias electrode in a rotational direction is smaller than a distance between adjacent substrate mounting portions.
    Type: Application
    Filed: February 4, 2014
    Publication date: August 7, 2014
    Applicant: Tokyo Electron Limited
    Inventors: Jun Yamawaku, Chishio Koshimizu, Mitsuhiro Tachibana, Hitoshi Kato, Takeshi Kobayashi, Shigehiro Miura, Takafumi Kimura
  • Publication number: 20140179122
    Abstract: A method of depositing a film of forming a doped oxide film including a first oxide film containing a first element and doped with a second element on substrates mounted on a turntable including depositing the first oxide film onto the substrates by rotating the turntable predetermined turns while a first reaction gas containing the first element is supplied from a first gas supplying portion, an oxidation gas is supplied from a second gas supplying portion, and a separation gas is supplied from a separation gas supplying portion, and doping the first oxide film with the second element by rotating the turntable predetermined turns while a second reaction gas containing the second element is supplied from one of the first and second gas supplying portions, an inert gas is supplied from another one, and the separation gas is supplied from the separation gas supplying portion.
    Type: Application
    Filed: December 18, 2013
    Publication date: June 26, 2014
    Applicant: Tokyo Electron Limited
    Inventors: Mitsuhiro Tachibana, Hiroaki Ikegawa, Yu Wamura, Muneyuki Otani, Jun Ogawa, Kosuke Takahashi
  • Publication number: 20140170859
    Abstract: A film formation device to conduct a film formation process for a substrate includes a rotating table, a film formation area configured to include a process gas supply part, a plasma processing part, a lower bias electrode provided at a lower side of a position of a height of the substrate on the rotating table, an upper bias electrode arranged at the same position of the height or an upper side of a position of the height, a high-frequency power source part connected to at least one of the lower bias electrode and the upper bias electrode and configured to form a bias electric potential on the substrate in such a manner that the lower bias electrode and the upper bias electrode are capacitively coupled, and an exhaust mechanism.
    Type: Application
    Filed: December 9, 2013
    Publication date: June 19, 2014
    Applicant: Tokyo Electron Limited
    Inventors: Jun YAMAWAKU, Chishio Koshimizu, Yohei Yamazawa, Mitsuhiro Tachibana, Hitoshi Kato, Takeshi Kobayashi, Shigehiro Miura, Takafumi Kimura
  • Publication number: 20130337635
    Abstract: A film deposition apparatus configured to perform a film deposition process on a substrate in a vacuum chamber includes a turntable configured to rotate a substrate loading area to receive the substrate, a film deposition area including at least one process gas supplying part configured to supply a process gas onto the substrate loading area and configured to form a thin film by depositing at least one of an atomic layer and a molecular layer along with a rotation of the turntable, a plasma treatment part provided away from the film deposition area in a rotational direction of the turntable and configured to treat the at least one of the atomic layer and the molecular layer for modification by plasma, and a bias electrode part provided under the turntable without contacting the turntable and configured to generate bias potential to attract ions in the plasma toward the substrate.
    Type: Application
    Filed: June 13, 2013
    Publication date: December 19, 2013
    Inventors: Jun YAMAWAKU, Chishio KOSHIMIZU, Mitsuhiro TACHIBANA, Hitoshi KATO, Takeshi KOBAYASHI, Shigehiro MIURA, Takafumi KIMURA
  • Publication number: 20130061804
    Abstract: A substrate processing apparatus includes a processing chamber; process areas each of which supplies a reaction gas; a turntable that rotates to cause a substrate to pass through the process areas; a gas nozzle provided in one of the process areas; a separating area that supplies a separation gas to separate atmospheres of the process areas; and a cover part configured to cover the gas nozzle and cause the reaction gas supplied from the gas nozzle to remain around the gas nozzle. The cover part includes an upstream side wall, a downstream side wall, and an upper wall. The cover part also includes a guide surface configured to guide the separation gas to flow over a lower part of the upstream side wall to a space above the upper wall. The distance between the gas nozzle and the upstream side wall is greater than or equal to 8 mm.
    Type: Application
    Filed: August 30, 2012
    Publication date: March 14, 2013
    Inventors: Tadashi ENOMOTO, Mitsuhiro TACHIBANA, Haruhiko FURUYA, Kentaro OSHIMO
  • Publication number: 20090246373
    Abstract: A metal film with a lowered resistance by controlling a crystal structure. A tungsten film is formed through a first tungsten film formation in which a first tungsten film with amorphous content is formed by alternately executing multiple times a supplying a metal base material gas such as WF6 gas and supplying a hydrogen compound gas such as SiH4 gas, with a purge executed between the two gas supply by supplying an inert gas such as Ar gas or N2 gas and a second tungsten film formation in which a second tungsten film is formed by simultaneously supplying the WF6 gas and a reducing gas such as H2 gas onto the first tungsten film. The amorphous content in the first tungsten film is controlled by adjusting the length of time over which the purge is executed following the SiH4 gas supply.
    Type: Application
    Filed: July 6, 2006
    Publication date: October 1, 2009
    Applicant: Tokyo Electron Limited
    Inventors: Mitsuhiro Tachibana, Masahito Sugiura, Takashi Nishimori, Kohichi Satoh
  • Patent number: 7592256
    Abstract: A method of forming a tungsten film on a surface of an object to be processed in a vessel capable of being vacuumized, includes the steps of forming a tungsten film by alternately repeating a reduction gas supplying process for supplying a reduction gas and a tungsten gas supplying process for supplying a tungsten-containing gas with an intervening purge process therebetween for supplying an inert gas while vacuumizing the vessel. A reduction gas supplying period of a reduction gas supplying process among the repeated reduction gas supplying processes is set to be longer than that of the remaining reduction gas supplying processes.
    Type: Grant
    Filed: August 7, 2002
    Date of Patent: September 22, 2009
    Assignee: Tokyo Electron Limited
    Inventors: Kazuya Okubo, Mitsuhiro Tachibana, Cheng Fang, Kohichi Sato, Hotaka Ishizuka