Abstract: An etching method includes: providing, within a chamber, a substrate that includes at least a silicon-containing material and a molybdenum film or a tungsten film which is in an exposed state, and selectively etching the molybdenum film or the tungsten film relative to the silicon-containing material by supplying, into the chamber, an oxidation gas and a hexafluoride gas as an etching gas.

Abstract: There is provided a substrate processing method which includes: treating a substrate using a fluorine-containing gas; and exposing the substrate to a moisture-containing atmosphere.

Abstract: There is provided a substrate processing method which includes: treating a substrate using a fluorine-containing gas; and exposing the substrate to a moisture-containing atmosphere.

Abstract: A technique capable of removing a natural oxide film formed on a surface of a semiconductor layer which contains a compound of indium and an element other than indium as a main ingredient, without making a temperature of the semiconductor layer relatively high. The technique includes supplying a first etching gas which is ?-diketone to the semiconductor layer and heating the semiconductor layer to remove an oxide of the indium constituting the natural oxide film; and supplying a second etching gas to the semiconductor layer and heating the semiconductor layer to remove an oxide of the element constituting the natural oxide film. By using the first etching gas, it is possible to remove the indium oxide even if the temperature of the semiconductor layer is relatively low. This eliminates the need to increase the temperature to a relatively high level when removing the natural oxide film.

Abstract: A technique capable of removing a natural oxide film formed on a surface of a semiconductor layer which contains a compound of indium and an element other than indium as a main ingredient, without making a temperature of the semiconductor layer relatively high. The technique includes supplying a first etching gas which is ?-diketone to the semiconductor layer and heating the semiconductor layer to remove an oxide of the indium constituting the natural oxide film; and supplying a second etching gas to the semiconductor layer and heating the semiconductor layer to remove an oxide of the element constituting the natural oxide film. By using the first etching gas, it is possible to remove the indium oxide even if the temperature of the semiconductor layer is relatively low. This eliminates the need to increase the temperature to a relatively high level when removing the natural oxide film.

Abstract: An etching method includes a step of etching a cobalt film formed on a surface of a target object by supplying an etching gas containing ?-diketone and an oxidizing gas for oxidizing the cobalt film to the target object. The supply of the etching gas and the oxidizing gas is carried out such that a flow rate ratio of the oxidizing gas to the etching gas is ranging from 0.5% to 50% while heating the target object to a temperature lower than or equal to 250° C.

Abstract: There is provided a substrate processing method which includes: treating a substrate using a fluorine-containing gas; and exposing the substrate to a moisture-containing atmosphere.

Abstract: A film formation device to conduct a film formation process for a substrate includes a rotating table, a film formation area configured to include a process gas supply part, a plasma processing part, a lower bias electrode provided at a lower side of a position of a height of the substrate on the rotating table, an upper bias electrode arranged at the same position of the height or an upper side of a position of the height, a high-frequency power source part connected to at least one of the lower bias electrode and the upper bias electrode and configured to form a bias electric potential on the substrate in such a manner that the lower bias electrode and the upper bias electrode are capacitively coupled, and an exhaust mechanism.

Abstract: An etching method includes a step of etching a cobalt film formed on a surface of a target object by supplying an etching gas containing ?-diketone and an oxidizing gas for oxidizing the cobalt film to the target object. The supply of the etching gas and the oxidizing gas is carried out such that a flow rate ratio of the oxidizing gas to the etching gas is ranging from 0.5% to 50% while heating the target object to a temperature lower than or equal to 250° C.

Abstract: A substrate processing apparatus includes a processing chamber; process areas each of which supplies a reaction gas; a turntable that rotates to cause a substrate to pass through the process areas; a gas nozzle provided in one of the process areas; a separating area that supplies a separation gas to separate atmospheres of the process areas; and a cover part configured to cover the gas nozzle and cause the reaction gas supplied from the gas nozzle to remain around the gas nozzle. The cover part includes an upstream side wall, a downstream side wall, and an upper wall. The cover part also includes a guide surface configured to guide the separation gas to flow over a lower part of the upstream side wall to a space above the upper wall. The distance between the gas nozzle and the upstream side wall is greater than or equal to 8 mm.

Abstract: A substrate processing apparatus performing substrate processing by supplying a process gas to a circular substrate loaded on a rotatable table in a vacuum container while rotating the substrate, including: a recess formed at one side of the rotatable table to receive the substrate; a heater heating the rotatable table to heat the substrate to 600 degrees or more for processing; and six support pins disposed on a bottom surface of the recess such that the support pins are respectively placed at vertices of a regular hexagon, support the substrate at locations separated a distance of two-thirds (2/3) of a radius of the substrate from a center of the substrate, and support the substrate in a state of being raised from the bottom surface of the recess.

Abstract: A film deposition apparatus configured to perform a film deposition process on a substrate in a vacuum chamber includes a turntable configured to rotate a substrate loading area to receive the substrate, a film deposition area including at least one process gas supplying part configured to supply a process gas onto the substrate loading area and configured to form a thin film by depositing at least one of an atomic layer and a molecular layer along with a rotation of the turntable, a plasma treatment part provided away from the film deposition area in a rotational direction of the turntable and configured to treat the at least one of the atomic layer and the molecular layer for modification by plasma, and a bias electrode part provided under the turntable without contacting the turntable and configured to generate bias potential to attract ions in the plasma toward the substrate.

Abstract: A film deposition apparatus includes a vacuum chamber, and a turntable having a substrate receiving area provided in the vacuum chamber. A heating unit is provided to heat the turntable so as to heat the substrate up to 600 degrees C. or higher. A process gas supply part is provided to supply a process gas having a decomposition temperature of 520 degrees C. or lower under 1 atmospheric pressure or lower, to the substrate. A gas shower head is provided in the process gas supply part and has a plurality of gas discharge holes provided in an opposed part facing a passing area of the substrate placed on the turntable. A cooling mechanism is provided in the process gas supply part and is configured to cool the opposed part in the gas shower head up to a temperature lower than the decomposition temperature of the process gas.

Abstract: A method of depositing a film of forming a doped oxide film including a first oxide film containing a first element and doped with a second element on substrates mounted on a turntable including depositing the first oxide film onto the substrates by rotating the turntable predetermined turns while a first reaction gas containing the first element is supplied from a first gas supplying portion, an oxidation gas is supplied from a second gas supplying portion, and a separation gas is supplied from a separation gas supplying portion, and doping the first oxide film with the second element by rotating the turntable predetermined turns while a second reaction gas containing the second element is supplied from one of the first and second gas supplying portions, an inert gas is supplied from another one, and the separation gas is supplied from the separation gas supplying portion.

Abstract: A substrate processing apparatus for performing a plasma process inside a vacuum chamber includes a turntable including substrate mounting portions for the substrates formed along a peripheral direction of the vacuum chamber to orbitally revolve these; a plasma generating gas supplying portion supplying a plasma generating gas into a plasma generating area; an energy supplying portion supplying energy to the plasma generating gas to change the plasma generating gas to plasma; a bias electrode provided on a lower side of the turntable to face the plasma generating area and leads ions in the plasma onto surfaces of the wafers; and an evacuation port evacuating the vacuum chamber, wherein the bias electrode extends from a rotational center of the turntable to an outer edge side, and a width of the bias electrode in a rotational direction is smaller than a distance between adjacent substrate mounting portions.

Abstract: A method of depositing a film of forming a doped oxide film including a first oxide film containing a first element and doped with a second element on substrates mounted on a turntable including depositing the first oxide film onto the substrates by rotating the turntable predetermined turns while a first reaction gas containing the first element is supplied from a first gas supplying portion, an oxidation gas is supplied from a second gas supplying portion, and a separation gas is supplied from a separation gas supplying portion, and doping the first oxide film with the second element by rotating the turntable predetermined turns while a second reaction gas containing the second element is supplied from one of the first and second gas supplying portions, an inert gas is supplied from another one, and the separation gas is supplied from the separation gas supplying portion.

Abstract: A film formation device to conduct a film formation process for a substrate includes a rotating table, a film formation area configured to include a process gas supply part, a plasma processing part, a lower bias electrode provided at a lower side of a position of a height of the substrate on the rotating table, an upper bias electrode arranged at the same position of the height or an upper side of a position of the height, a high-frequency power source part connected to at least one of the lower bias electrode and the upper bias electrode and configured to form a bias electric potential on the substrate in such a manner that the lower bias electrode and the upper bias electrode are capacitively coupled, and an exhaust mechanism.

Abstract: A film deposition apparatus configured to perform a film deposition process on a substrate in a vacuum chamber includes a turntable configured to rotate a substrate loading area to receive the substrate, a film deposition area including at least one process gas supplying part configured to supply a process gas onto the substrate loading area and configured to form a thin film by depositing at least one of an atomic layer and a molecular layer along with a rotation of the turntable, a plasma treatment part provided away from the film deposition area in a rotational direction of the turntable and configured to treat the at least one of the atomic layer and the molecular layer for modification by plasma, and a bias electrode part provided under the turntable without contacting the turntable and configured to generate bias potential to attract ions in the plasma toward the substrate.

Abstract: A substrate processing apparatus includes a processing chamber; process areas each of which supplies a reaction gas; a turntable that rotates to cause a substrate to pass through the process areas; a gas nozzle provided in one of the process areas; a separating area that supplies a separation gas to separate atmospheres of the process areas; and a cover part configured to cover the gas nozzle and cause the reaction gas supplied from the gas nozzle to remain around the gas nozzle. The cover part includes an upstream side wall, a downstream side wall, and an upper wall. The cover part also includes a guide surface configured to guide the separation gas to flow over a lower part of the upstream side wall to a space above the upper wall. The distance between the gas nozzle and the upstream side wall is greater than or equal to 8 mm.

Abstract: A metal film with a lowered resistance by controlling a crystal structure. A tungsten film is formed through a first tungsten film formation in which a first tungsten film with amorphous content is formed by alternately executing multiple times a supplying a metal base material gas such as WF6 gas and supplying a hydrogen compound gas such as SiH4 gas, with a purge executed between the two gas supply by supplying an inert gas such as Ar gas or N2 gas and a second tungsten film formation in which a second tungsten film is formed by simultaneously supplying the WF6 gas and a reducing gas such as H2 gas onto the first tungsten film. The amorphous content in the first tungsten film is controlled by adjusting the length of time over which the purge is executed following the SiH4 gas supply.