Abstract: In forming a desired print gap between a sheet of paper fed on a platen and a print head by driving a moving mechanism for changing a space between the platen and the print head, a condition where the space between the platen and the print head becomes smaller than a predetermined value is detected, and in this case the space between the platen and the print head is increased by a driving portion for driving the moving mechanism. Accordingly, when a thin paper is used as the sheet of paper, cutting, wrinkling, etc. of the thin paper can be prevented.

Abstract: A method for producing a semiconductor device according to the present invention comprises the following steps. A PxOy (x>0, y>0) insulating layer is formed on III-V group compound semiconductor substrate including indium and/or phosphorus. Then the substrate is subjected to heat treatment, and finally an electrode metal layer is formed on the insulating layer. This method ensures to increase the barrier height of MES type diode and the forward current-voltage characteristics of Schottky diode. Further, another method of the present invention comprises the following steps. An aluminum or indium layer is formed on III-V group compound semiconductor substrate including indium or phosphorus. The substrate is subjected to a first heat treatment. Then an insulating layer composed of phosphoric oxide PxOy (x>0, y>0) is formed on the aluminum or indium layer. Further, the substrate is subjected to a second heat treatment, and finally an electrode metal layer is formed on the insulating layer.