Abstract: In a card-type portable device, a terminal board is provided in the terminal board mounting area of a circuit board. Terminal electrodes are provided on a surface of the terminal board. The terminal electrodes are arranged at a height position according to a device specification by setting the thickness of the terminal board such that the terminal electrodes are positioned at the specified height position even when the height position of the circuit board is freely set. Also, by placing the circuit board along the wall of the bottom of a casing, the space defined by the circuit board and the upper wall of the casing is increased. Accordingly, tall electronic components can be provided on the circuit board in the casing, while maintaining the specified thickness of the casing.

Abstract: In a card-type portable device, a terminal board is provided in the terminal board mounting area of a circuit board. Terminal electrodes are provided on a surface of the terminal board. The terminal electrodes are arranged at a height position according to a device specification by setting the thickness of the terminal board such that the terminal electrodes are positioned at the specified height position even when the height position of the circuit board is freely set. Also, by placing the circuit board along the wall of the bottom of a casing, the space defined by the circuit board and the upper wall of the casing is increased. Accordingly, tall electronic components can be provided on the circuit board in the casing, while maintaining the specified thickness of the casing.

Abstract: A high-frequency amplifying integrated-circuit device is provided in which variations of gain can be reduced and which can be manufactured at a low cost as compared with prior art devices. A high-frequency amplifying integrated-circuit device includes a semiconductor substrate; and a transistor which is formed on the semiconductor substrate and which has a plurality of first electrodes, a plurality of second electrodes, and at least one third electrode, a high-frequency signal input to the plurality of second electrodes being amplified by the transistor and output from the third electrode, wherein at least two first electrodes from among the plurality of first electrodes are each grounded via a capacitor, and the electrostatic capacitance values of the two capacitors are set at mutually different values.