Abstract: A semiconductor device includes a first substrate, a second substrate, a connection part, and an alignment mark. The connection part includes a first electrode which is disposed on the first substrate, a second electrode which is disposed on the second substrate, and a connection bump which connects the first electrode and the second electrode. The alignment mark includes a first mark which is disposed on the first substrate and a second mark which is disposed on the second substrate. A sum of a height of the first mark and a height of the second mark is substantially equal to a sum of a height of the first electrode, a height of the second electrode, and a height of the connection bump.

Abstract: A solid-state imaging device has a first substrate and a second substrate. The first substrate has a plurality of first photoelectric conversion units. The second substrate has a second semiconductor layer. The second semiconductor layer has a plurality of second photoelectric conversion units. A first dimension of a first range is smaller than a second dimension of a second range. The first range is the entirety of the second photoelectric conversion unit. The first dimension is a dimension of the first range in a direction parallel to a main surface of the second substrate. The second range is a range in which the second light is incident in the second semiconductor layer. The second dimension is a dimension of the second range in the direction parallel to the main surface of the second substrate.

Abstract: A plurality of first pixels P1 corresponding to color filters of two or more colors constitute a pixel group. A plurality of the pixel groups are arranged so that each of the pixel groups corresponds to one of second pixels P2. The light which is transmitted through the color filters enters first photoelectric conversion units of the first pixels P1 corresponding to the color filters. The light which is transmitted through the pixel group enters a second photoelectric conversion unit of the second pixel P2 corresponding to the pixel group. The number of colors of the color filters corresponding to the plurality of first pixels P1 that constitute the pixel group, and the number of the first pixels P1 corresponding to each color are equal to each other among the plurality of pixel groups.

Abstract: A solid-state imaging device is a solid-state imaging device in which a first substrate formed on a first semiconductor wafer and a second substrate formed on a second semiconductor wafer are bonded via connect that electrically connects the substrates, wherein the first substrate includes photoelectric conversion units, the second substrate includes an output circuit that acquires a signal generated by the photoelectric conversion unit via the connector and outputs the signal, and dummy connectors that support the first and second bonded substrates are further arranged in a substrate region in which the connectors are not arranged in a substrate region of at least one of the first substrate and the second substrate.

Abstract: A semiconductor device includes a first substrate, a second substrate, a connection part, and an alignment mark. The connection part includes a first electrode which is disposed on the first substrate, a second electrode which is disposed on the second substrate, and a connection bump which connects the first electrode and the second electrode. The alignment mark includes a first mark which is disposed on the first substrate and a second mark which is disposed on the second substrate. A sum of a height of the first mark and a height of the second mark is substantially equal to a sum of a height of the first electrode, a height of the second electrode, and a height of the connection bump.

Abstract: A stacked solid-state imaging device includes a first substrate and a second substrate that are stacked on each other, a photoelectric conversion unit that converts incident light into an electrical signal, an electrode portion that is provided on the first substrate and has an exposed surface exposed to the outside in order to deliver an electrical signal to and from the outside, a connection portion that electrically connects a first contact portion provided on the first substrate and a second contact portion provided on the second substrate, and a wiring portion that is provided on the first substrate and electrically connects the electrode portion and the first contact portion in which the connection portion is arranged so as not to overlap the exposed surface when seen from a stacked direction in which the first substrate and the second substrate are stacked on each other.

Abstract: A plurality of first pixels P1 corresponding to color filters of two or more colors constitute a pixel group. A plurality of the pixel groups are arranged so that each of the pixel groups corresponds to one of second pixels P2. The light which is transmitted through the color filters enters first photoelectric conversion units of the first pixels P1 corresponding to the color filters. The light which is transmitted through the pixel group enters a second photoelectric conversion unit of the second pixel P2 corresponding to the pixel group. The number of colors of the color filters corresponding to the plurality of first pixels P1 that constitute the pixel group, and the number of the first pixels P1 corresponding to each color are equal to each other among the plurality of pixel groups.

Abstract: In a solid-state imaging apparatus in which a first substrate formed on a first semiconductor wafer and a second substrate formed on a second semiconductor wafer are bonded via a connection portion configured to electrically connect the first and second substrates, the first substrate includes a first pixel region in which a plurality of first photoelectric conversion elements partially transmit incident light and are arranged in a two-dimensional shape. The second substrate includes a second pixel region in which a plurality of second photoelectric conversion elements are arranged in a two-dimensional shape in at least a partial region of a region corresponding to the first pixel region. The first photoelectric conversion elements generate imaging signals, and the second photoelectric conversion elements generate signals to be used in imaging preparation.

Abstract: A semiconductor device includes a first semiconductor substrate and a second semiconductor substrate. The first semiconductor substrate and the second semiconductor substrate are electrically connected to each other in a state in which a first connection surface of the first semiconductor substrate and a second connection surface of the second semiconductor substrate face each other. A concave portion is formed in at least one of the first connection surface and the second connection surface. An electrode, which is electrically connected to a portion of wirings included in a wiring layer provided in the first semiconductor substrate or the second semiconductor substrate in which the concave portion is formed and is capable of being electrically connected to an outside, is formed in an inside of the concave portion.

Abstract: A solid-state imaging device is a solid-state imaging device in which a first substrate formed on a first semiconductor wafer and a second substrate formed on a second semiconductor wafer are bonded via connect that electrically connects the substrates, wherein the first substrate includes photoelectric conversion units, the second substrate includes an output circuit that acquires a signal generated by the photoelectric conversion unit via the connector and outputs the signal, and dummy connectors that support the first and second bonded substrates are further arranged in a substrate region in which the connectors are not arranged in a substrate region of at least one of the first substrate and the second substrate.

Abstract: A solid-state imaging device is a solid-state imaging device in which a first substrate formed on a first semiconductor wafer and a second substrate formed on a second semiconductor wafer are bonded via connect that electrically connects the substrates, wherein the first substrate includes photoelectric conversion units, the second substrate includes an output circuit that acquires a signal generated by the photoelectric conversion unit via the connector and outputs the signal, and dummy connectors that support the first and second bonded substrates are further arranged in a substrate region in which the connectors are not arranged in a substrate region of at least one of the first substrate and the second substrate.

Abstract: A semiconductor device includes a first semiconductor substrate and a second semiconductor substrate. The first semiconductor substrate and the second semiconductor substrate are electrically connected to each other in a state in which a first connection surface of the first semiconductor substrate and a second connection surface of the second semiconductor substrate face each other. A concave portion is formed in at least one of the first connection surface and the second connection surface. An electrode, which is electrically connected to a portion of wirings included in a wiring layer provided in the first semiconductor substrate or the second semiconductor substrate in which the concave portion is formed and is capable of being electrically connected to an outside, is formed in an inside of the concave portion.

Abstract: In a solid-state imaging apparatus in which a first substrate formed on a first semiconductor wafer and a second substrate formed on a second semiconductor wafer are bonded via a connection portion configured to electrically connect the first and second substrates, the first substrate includes a first pixel region in which a plurality of first photoelectric conversion elements partially transmit incident light and are arranged in a two-dimensional shape. The second substrate includes a second pixel region in which a plurality of second photoelectric conversion elements are arranged in a two-dimensional shape in at least a partial region of a region corresponding to the first pixel region. The first photoelectric conversion elements generate imaging signals, and the second photoelectric conversion elements generate signals to be used in imaging preparation.

Abstract: An encapsulated endoscope in which exposure amount is controlled at the light source side, and a MOS image sensor is not required to mount a vertical scanning circuit for electronic shutter which is to provide an exposure amount control function. Therefore, since a vertical scanning circuit for electronic shutter is not mounted, the sensor area can be made smaller so that size of the interior of the encapsulated endoscope can be reduced.

Abstract: The present invention relates to solid-state imaging apparatus such as digital camera for outputting video signals, and more particularly relates to a solid-state imaging apparatus in which vertical stripe-like noise and horizontal shading can be corrected.

Abstract: A solid-state imaging apparatus, comprising: a pixel section including a matrix having a plurality of pixels, each pixel including photoelectric conversion means, a storage section, transfer means, amplification means, and reset means, on a column basis, an output signal line whose one end is coupled to a constant-current source, and in which the area carrying thereon the matrix of the pixels includes a light-shielding area, a read area, and a transition area disposed between the light-shielding area and the read area; and control means for performing control to keep the potential difference between the one end and the other end of the constant-current source in a range with which the constant-current source can be operated by using the pixel signal to be output to the output signal line at the time of resetting the pixel of the transition area, when outputting the pixel signal corresponding to the incident light from the pixel of the read area.

Abstract: A solid-state imaging apparatus including a solid-state imaging device having a pixel section having unit pixels for generating imaging signal associated with an object each formed of a first pixel and a second pixel adjacent to the first pixel, a read drive section where one or more pixels of the first and second pixels are respectively treated as a read unit group so as to effect read operation by the read unit group based on a setting signal inputted from an external source, and an output section for generating a difference signal between signals outputted from the first and second pixels to output it as an imaging signal associated with the unit pixel; and a section for interpolating an imaging signal at a predetermined location between the unit pixels based on imaging signals outputted from the difference signal output section.

Abstract: A solid-state imaging apparatus including: a pixel section having two-dimensionally arrayed unit pixels each having a first pixel and a second pixel respectively containing photoelectric conversion devices that are located at positions regarded as the same position at which image is formed by an imaging optical system; a reset control means for simultaneously resetting respectively independently all first pixels and all second pixels of each unit pixel arrayed in the pixel section; a difference signal output means for obtaining a difference signal between signals of the first pixel and of the second pixel; a control section for rendering control such that a reset is effected of signals of all first pixels of the pixel section and, after a desired exposure time, a reset is effected of signals of all second pixels of the pixel section by the reset control means, and then signals of the first pixel and of the second pixel are read out respectively in a simultaneous or substantially simultaneous manner immediatel

Abstract: A solid-state imaging apparatus, comprising: a pixel section including a matrix having a plurality of pixels, each pixel including photoelectric conversion means, a storage section, transfer means, amplification means, and reset means, on a column basis, an output signal line whose one end is coupled to a constant-current source, and in which the area carrying thereon the matrix of the pixels includes a light-shielding area, a read area, and a transition area disposed between the light-shielding area and the read area; and control means for performing control to keep the potential difference between the one end and the other end of the constant-current source in a range with which the constant-current source can be operated by using the pixel signal to be output to the output signal line at the time of resetting the pixel of the transition area, when outputting the pixel signal corresponding to the incident light from the pixel of the read area.

Abstract: A solid-state imaging apparatus comprising: a solid-state imaging device including a pixel section having unit pixels for generating imaging signal associated with an object each formed of a first pixel and a second pixel adjacent to the first pixel where a plurality of the unit pixels are two-dimensionally arranged so that a shift in a first direction occurs between the unit pixels arranged in the first direction and the unit pixels arranged in the first direction so as to be adjacent thereto in a second direction different from the first direction, a read drive section where one or more pixels of the first pixels and one or more pixels of the second pixels are respectively treated as a read unit group so as to effect read operation by the read unit group based on a setting signal inputted from an external source, and a difference signal output means for generating a difference signal between a signal outputted from the first pixel and a signal outputted from the second pixel to output it as an imaging signa