Abstract: This semiconductor pressure sensor includes: a first semiconductor substrate; a second semiconductor substrate; and a first piezoresistance element and a second piezoresistance element provided in the second semiconductor substrate. A first recess and a second recess are formed on the first semiconductor substrate, and a first cavity surrounded by the first recess and the second semiconductor substrate and a second cavity surrounded by the second recess and the second semiconductor substrate are formed. The first piezoresistance element is formed at a position overlapping an outer periphery of the first cavity or a position inward of the outer periphery of the first cavity. The second piezoresistance element is formed at a position overlapping an outer periphery of the second cavity, a position overlapping an inner periphery of the second cavity, or a position inward of the outer periphery and outward of the inner periphery of the second cavity.