Patents by Inventor Mitsuhiro Yamanaka

Mitsuhiro Yamanaka has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Vertical gate semiconductor device and method for fabricating the same
    Patent number: 7187041
    Abstract: A first region 11 functioning as a transistor includes a drain region 111, a body region 112 formed over the drain region 111, a source region 113A formed over the body region 112 and a trench formed through the body region 112 and having a gate electrode 120 buried therein. A source region 113B is formed over the body region 112 extending in a second region 12.
    Type: Grant
    Filed: October 13, 2004
    Date of Patent: March 6, 2007
    Assignee: Matsushita Electric Industrial Co., Ltd.
    Inventors: Shuji Mizokuchi, Mitsuhiro Yamanaka, Hiroyuki Gunji
  • Vertical gate semiconductor device and method for fabricating the same
    Publication number: 20060186466
    Abstract: A first region 11 functioning as a transistor includes a drain region 111, a body region 112 formed over the drain region 111, a source region 113A formed over the body region 112 and a trench formed through the body region 112 and having a gate electrode 120 buried therein. A source region 113B is formed over the body region 112 extending in a second region 12.
    Type: Application
    Filed: April 24, 2006
    Publication date: August 24, 2006
    Applicant: MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
    Inventors: Shuji Mizokuchi, Mitsuhiro Yamanaka, Hiroyuki Gunji
  • Vertical gate semiconductor device and method for fabricating the same
    Publication number: 20050133861
    Abstract: A first region 11 functioning as a transistor includes a drain region 111, a body region 112 formed over the drain region 111, a source region 113A formed over the body region 112 and a trench formed through the body region 112 and having a gate electrode 120 buried therein. A source region 113B is formed over the body region 112 extending in a second region 12.
    Type: Application
    Filed: October 13, 2004
    Publication date: June 23, 2005
    Applicant: MATSUSHITA ELECRIC INDUSTRIAL CO., LTD.
    Inventors: Shuji Mizokuchi, Mitsuhiro Yamanaka, Hiroyuki Gunji