Patents by Inventor Mitsuko Ito

Mitsuko Ito has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20070276109
    Abstract: The invention relates to a porous nano material polymer composite. The porous nano material polymer composite according to the invention is prepared by impregnating monomer in the nanometer order holes of a nano material by supercritical carbon dioxide fluid, and by polymerizing the monomer in situ. Therefore, the polymer composite has a network structure in which polymer penetrates into nano pores.
    Type: Application
    Filed: March 4, 2005
    Publication date: November 29, 2007
    Applicant: NIHON UNIVERSITY
    Inventors: Takashi Sawaguchi, Shoichiro Yano, Toshiki Hagiwara, Mitsuko Ito
  • Patent number: 4638443
    Abstract: A gas detecting apparatus incorporates a number of gas detecting elements which react with a variety of gases and exhibit gas sensitivities differing from one another in dependence on the gas species. The detection patterns obtained by quantitizing the detection outputs of the gas detecting elements are compared with a plurality of standard patterns prepared previously for assumed combinations of gas species and concentrations thereof. On the basis of the standard pattern which is same or most similar to the detection pattern, the gas species is identified.
    Type: Grant
    Filed: February 21, 1984
    Date of Patent: January 20, 1987
    Assignee: Hitachi, Ltd.
    Inventors: Masayoshi Kaneyasu, Hideo Arima, Mitsuko Ito, Shoichi Iwanaga, Nobuo Sato, Takanobu Noro, Akira Ikagami, Tokio Isogai
  • Patent number: 4586143
    Abstract: A gas detecting apparatus is disclosed in which detection outputs from a plurality of semiconductor gas detecting elements different in gas detection characteristic from each other and previously-obtained characteristic values of the semiconductor gas detecting elements for a mixed gas are subjected to operational processing to detect one or more specified constituent gases contained in the mixed gas, and in which when the specified constituent gas is detected, the detection information is announced by some means, and also the supply of gas is stopped or a supply gas is diluted.
    Type: Grant
    Filed: January 28, 1983
    Date of Patent: April 29, 1986
    Assignee: Hitachi, Ltd.
    Inventors: Masayoshi Kaneyasu, Takanobu Noro, Hideo Arima, Mitsuko Ito, Shoichi Iwanaga, Nobuo Sato, Akira Ikegami, Tokio Isogai
  • Patent number: 4481499
    Abstract: A gas detector with a layer of gas sensing material comprising an oxide semiconductor, wherein at least one coating layer each of a p-type oxide semiconductor and an n-type oxide semiconductor is provided in a multi-layer arrangement on the surface of said layer of gas sensing material that contacts the gas. The gas detector can selectively identify only specific gases.
    Type: Grant
    Filed: April 27, 1983
    Date of Patent: November 6, 1984
    Assignee: Hitachi, Ltd.
    Inventors: Hideo Arima, Masayoshi Kaneyasu, Mitsuko Ito