Abstract: According to one embodiment, an imprint method is provided. In the imprint method, a template including a mechanoluminescent material is brought into contact with a resist on a substrate. The posture of the template is adjusted on the basis of the intensity of mechanoluminescence from the template. Light is emitted to the resist to harden the resist. The template is separated from the resist.

Abstract: According to one embodiment, an imprint method is provided. In the imprint method, a template including a mechanoluminescent material is brought into contact with a resist on a substrate. The posture of the template is adjusted on the basis of the intensity of mechanoluminescence from the template. Light is emitted to the resist to harden the resist. The template is separated from the resist.

Abstract: According to one embodiment, a pattern data creating method includes a calculation process, a determination process, and a correction process. In the calculation process, it is calculated a stress distribution of stresses that are applied to a template when a distance between the template and a substrate on which resist are disposed is predetermined, the template including a template pattern. In the determination process, it is determined whether or not there is a stress concentration spot in the template pattern at which a stress value larger than a predetermined criterion value is to appear. If the stress concentration spot is present, in the correction process, it is a corrected pattern data of the template pattern such that the stress value at the stress concentration spot becomes a stress value not larger than the predetermined criterion value.

Abstract: According to one embodiment, an imprint method is provided. In the imprint method, a template including a mechanoluminescent material is brought into contact with a resist on a substrate. The posture of the template is adjusted on the basis of the intensity of mechanoluminescence from the template. Light is emitted to the resist to harden the resist. The template is separated from the resist.

Abstract: According to one embodiment, a pattern data creating method includes a calculation process, a determination process, and a correction process. In the calculation process, it is calculated a stress distribution of stresses that are applied to a template when a distance between the template and a substrate on which resist are disposed is predetermined, the template including a template pattern. In the determination process, it is determined whether or not there is a stress concentration spot in the template pattern at which a stress value larger than a predetermined criterion value is to appear. If the stress concentration spot is present, in the correction process, it is a corrected pattern data of the template pattern such that the stress value at the stress concentration spot becomes a stress value not larger than the predetermined criterion value.

Abstract: A pattern writing method acquires the area of a pattern segment located in each of a plurality of small regions obtained by dividing a region on which a pattern is to be written, small region by small region, and writes a pattern based on an optimum dose calculated based on this area. This method employs a scheme of shifting pattern segments and averaging the accumulated area, so that even when the pitch of repetitive patterns slightly differs from the side length of each small region in the pitch direction, a peculiar error does not occur, thereby ensuring highly-precise proximity effect correction and contributing to improving the precision of writing an LSI pattern.

Abstract: A charged beam lithography system includes a charged particle gun for generating charged beams, a main deflecting system and a sub-deflecting system for deflecting the charged beams generated by the charged particle gun, and a control computer. The charged beam lithography system is designed to cause the surface of a substrate to be irradiated with the charged beams from the charged particle gun while continuously moving a stage, to write a desired pattern for each of stripes defined by the maximum deflection widths of the main deflecting system and the sub-deflecting system. The charged beam lithography system further comprises: a real time proximity effect correcting circuit for calculating an optimum dosage for each of the stripes by correcting the dosage of the electron beams in view of the influence of the proximity effect; and a cash memory for storing the optimum dosage data for at least two of the stripes.