Patents by Inventor Mitsukuni Tsukihara
Mitsukuni Tsukihara has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20220285126Abstract: Provided is an ion implanter including an ion source that generates ions, an extraction unit that generates an ion beam by extracting the ions from the ion source and accelerating the ions, a linear acceleration unit that accelerates the ion beam extracted and accelerated by the extraction unit, an electrostatic acceleration/deceleration unit that accelerates or decelerates the ion beam emitted from the linear acceleration unit, and an implantation processing chamber in which implantation process is performed by irradiating a workpiece with the ion beam emitted from the electrostatic acceleration/deceleration unit.Type: ApplicationFiled: March 2, 2022Publication date: September 8, 2022Inventor: Mitsukuni Tsukihara
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Patent number: 9502210Abstract: An ion implanter includes: a beam deflector that deflects an ion beam passing through a previous stage beam path and outputs the beam to pass through a subsequent stage beam path toward a wafer; a beam filter slit that partially shields the beam traveling through the subsequent stage beam path and allows passage of a beam component having a predetermined trajectory toward the wafer; a dose cup that is disposed between the beam deflector and the beam filter slit and measures a part of the beam exiting from the beam deflector as a beam current; and a trajectory limiting mechanism that is disposed between the beam deflector and the dose cup and prevents a beam component having a trajectory deviated from the predetermined trajectory from being incident to a measurement region of the dose cup.Type: GrantFiled: August 7, 2015Date of Patent: November 22, 2016Assignee: Sumitomo Heavy Industries Ion Technology Co., Ltd.Inventors: Makoto Sano, Mitsukuni Tsukihara, Haruka Sasaki, Kouji Inada
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Patent number: 9449791Abstract: Provided is a beam irradiation apparatus including: a beam scanner that is configured such that a charged particle beam is reciprocatively scanned in a scanning direction; a measurement device that is capable of measuring an angular component of charged particles incident into a region of a measurement target; and a data processor that calculates effective irradiation emittance of the charged particle beam using results measured by the measurement device. The measurement device measures a time dependent value for angular distribution of the charged particle beam. The data processor transforms time information included in the time dependent value for the angular distribution to position information and thus calculates the effective irradiation emittance. The effective irradiation emittance represents emittance of a virtual beam bundle, the virtual beam bundle being formed by summing portions of the charged particle beam which are incident into the region of the measurement target.Type: GrantFiled: June 11, 2015Date of Patent: September 20, 2016Assignee: Sumitomo Heavy Industries Ion Technology Co., Ltd.Inventors: Mitsukuni Tsukihara, Noriyasu Ido, Noriyuki Suetsugu
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Publication number: 20160042915Abstract: An ion implanter includes: a beam deflector that deflects an ion beam passing through a previous stage beam path and outputs the beam to pass through a subsequent stage beam path toward a wafer; a beam filter slit that partially shields the beam traveling through the subsequent stage beam path and allows passage of a beam component having a predetermined trajectory toward the wafer; a dose cup that is disposed between the beam deflector and the beam filter slit and measures a part of the beam exiting from the beam deflector as a beam current; and a trajectory limiting mechanism that is disposed between the beam deflector and the dose cup and prevents a beam component having a trajectory deviated from the predetermined trajectory from being incident to a measurement region of the dose cup.Type: ApplicationFiled: August 7, 2015Publication date: February 11, 2016Inventors: Makoto Sano, Mitsukuni Tsukihara, Haruka Sasaki, Kouji Inada
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Publication number: 20150364297Abstract: Provided is a beam irradiation apparatus including: a beam scanner that is configured such that a charged particle beam is reciprocatively scanned in a scanning direction; a measurement device that is capable of measuring an angular component of charged particles incident into a region of a measurement target; and a data processor that calculates effective irradiation emittance of the charged particle beam using results measured by the measurement device. The measurement device measures a time dependent value for angular distribution of the charged particle beam. The data processor transforms time information included in the time dependent value for the angular distribution to position information and thus calculates the effective irradiation emittance. The effective irradiation emittance represents emittance of a virtual beam bundle, the virtual beam bundle being formed by summing portions of the charged particle beam which are incident into the region of the measurement target.Type: ApplicationFiled: June 11, 2015Publication date: December 17, 2015Inventors: Mitsukuni Tsukihara, Noriyasu Ido, Noriyuki Suetsugu
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Patent number: 9208996Abstract: An ion implantation apparatus includes a beamline device for transporting ions from an ion source to an implantation processing chamber. The implantation processing chamber includes a workpiece holder for mechanically scanning a workpiece with respect to a beam irradiation region. The beamline device may be operated under a first implantation setting configuration suitable for transport of a low energy/high current beam for high-dose implantation into the workpiece, or a second implantation setting configuration suitable for transport of a high energy/low current beam for low-dose implantation into the workpiece. A beam center trajectory being a reference in a beamline is equal from the ion source to the implantation processing chamber in the first implantation setting configuration and the second implantation setting configuration.Type: GrantFiled: November 12, 2013Date of Patent: December 8, 2015Assignee: Sumitomo Heavy Industries Ion Technology Co., Ltd.Inventors: Mitsukuni Tsukihara, Mitsuaki Kabasawa
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Patent number: 8759801Abstract: During ion implantation into a wafer, an ion beam current is measured, a change in vacuum conductance which changes in accordance with a change of the location of a structure operating in a vacuum beam line chamber or a vacuum treatment chamber is obtained, furthermore, changes in degree of vacuum at one or plural places are detected using a vacuum gauge installed in the vacuum beam line chamber or the vacuum treatment chamber. The amount of an ion beam current is corrected using the obtained vacuum conductance and the detected degree of vacuum at one or plural places, and the dose amount implanted into the wafer is controlled.Type: GrantFiled: October 16, 2012Date of Patent: June 24, 2014Assignee: Sen CorporationInventors: Shiro Ninomiya, Mitsukuni Tsukihara, Tetsuya Kudo, Tatsuya Yamada
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Publication number: 20140134833Abstract: An ion implantation apparatus includes a beamline device for transporting ions from an ion source to an implantation processing chamber. The implantation processing chamber includes a workpiece holder for mechanically scanning a workpiece with respect to a beam irradiation region. The beamline device may be operated under a first implantation setting configuration suitable for transport of a low energy/high current beam for high-dose implantation into the workpiece, or a second implantation setting configuration suitable for transport of a high energy/low current beam for low-dose implantation into the workpiece. A beam center trajectory being a reference in a beamline is equal from the ion source to the implantation processing chamber in the first implantation setting configuration and the second implantation setting configuration.Type: ApplicationFiled: November 12, 2013Publication date: May 15, 2014Applicant: SEN CORPORATIONInventors: Mitsukuni Tsukihara, Mitsuaki Kabasawa
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Patent number: 7982192Abstract: In a beam processing apparatus including a beam scanner having a two electrodes type deflection scanning electrode, the beam scanner further includes shielding suppression electrode assemblies respectively at vicinities of upstream side and downstream side of the two electrodes type deflection scanning electrode and having openings in a rectangular shape for passing a charged particle beam. Each of the shielding suppression electrode assemblies is an assembly electrode comprising one sheet of a suppression electrode and two sheets of shielding ground electrodes interposing the suppression electrode. A total of front side portions and rear side portions of the two electrodes type deflection scanning electrode is shielded by the two sheets of shielding ground electrodes.Type: GrantFiled: April 21, 2008Date of Patent: July 19, 2011Assignee: SEN CorporationInventors: Mitsukuni Tsukihara, Mitsuaki Kabasawa, Hiroshi Matsushita, Takanori Yagita, Yoshitaka Amano, Yoshito Fujii
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Patent number: 7851772Abstract: An ion implantation apparatus according to the invention includes a park electrode as a deflecting apparatus arranged at a section of a beam line from an outlet of a mass analysis magnet apparatus to a front side of a mass analysis slit for deflecting an ion beam in a predetermined direction of being deviated from a beam trajectory line by an operation of an electric field. When the ion beam does not satisfy a desired condition, a park voltage is applied to the park electrode, thereby, the ion beam is brought into an evacuated state by being deflected from the beam trajectory line. As a result, the ion beam cannot pass through the mass analysis slit, and therefore, the ion beam which does not arrive at a wafer to prevent the ion beam which does not satisfy the condition from being irradiated to the wafer.Type: GrantFiled: April 10, 2008Date of Patent: December 14, 2010Assignee: Sen Corporation an Shi and Axcelis CompanyInventors: Mitsukuni Tsukihara, Takanori Yagita, Hiroshi Sogabe, Toshio Yumiyama, Mitsuaki Kabasawa
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Patent number: 7791049Abstract: A beam line before incidence on a beam scanner is arranged with an injector flag Faraday cup that detects a beam current by measuring a total beam amount of an ion beam to be able to be brought in and out thereto and therefrom. When the ion beam is shut off by placing the injector flag Faraday cup on a beam trajectory line, the ion beam impinges on graphite provided at the injector flag Faraday cup. At this occasion, even when the graphite is sputtered by the ion beam, since the injector flag Faraday cup is arranged on an upstream side of the beam scanner and the ion beam is shut off by the injector flag Faraday cup, particles of the sputtered graphite do not adhere to a peripheral member of the injector flag Faraday cup.Type: GrantFiled: April 10, 2008Date of Patent: September 7, 2010Assignee: Sen Corporation an SHI and Axcelis CompanyInventors: Mitsukuni Tsukihara, Yoshito Fujii
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Patent number: 7755067Abstract: An ion implantation apparatus reciprocally scans an ion beam extracted from an ion source and passed through a mass analysis magnet apparatus and a mass analysis slit and irradiates to a wafer. The ion beam is converged and shaped by providing a first quadrupole vertical focusing electromagnet at a section of a beam line from an outlet of the mass analysis magnet apparatus before incidence of the mass analysis slit and providing a second quadrupole vertical focusing electromagnet having an effective magnetic field effect larger than that of the first quadrupole focusing electromagnet at a section of the beam line from an outlet of the mass analysis slit before incidence on the beam scanner.Type: GrantFiled: April 10, 2008Date of Patent: July 13, 2010Assignee: SEN CorporationInventors: Mitsukuni Tsukihara, Takanori Yagita, Yoshitaka Amano, Mitsuaki Kabasawa
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Patent number: 7718980Abstract: A beam processing system is for causing a particle beam extracted from a beam generating source to pass through a mass analysis magnet device, a mass analysis slit, and a deflection scanner in the order named, thereby irradiating the particle beam onto a processing object. The mass analysis slit is installed between the mass analysis magnet device and the deflection scanner at a position where the particle beam having passed through the mass analysis magnet device converges most in a lateral direction. A first DC quadrupole electromagnet and a second DC quadrupole electromagnet are installed on an upstream side and a downstream side of the mass analysis slit, respectively.Type: GrantFiled: May 30, 2007Date of Patent: May 18, 2010Assignee: SEN CorporationInventors: Mitsukuni Tsukihara, Mitsuaki Kabasawa
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Patent number: 7687782Abstract: A beam deflection scanner performs reciprocating deflection scanning with an ion beam or a charged particle beam to thereby periodically change a beam trajectory and comprises a pair of scanning electrodes installed so as to be opposed to each other with the beam trajectory interposed therebetween and a pair of correction electrodes installed in a direction perpendicular to an opposing direction of the pair of scanning electrodes, with the beam trajectory interposed therebetween, and extending along a beam traveling axis. Positive and negative potentials are alternately applied to the pair of scanning electrodes, while a correction voltage is constantly applied to the pair of correction electrodes. A correction electric field produced by the pair of correction electrodes is exerted on the ion beam or the charged particle beam passing between the pair of scanning electrodes at the time of switching between the positive and negative potentials.Type: GrantFiled: May 30, 2007Date of Patent: March 30, 2010Assignee: SEN Corporation, an SHI and Axcelis CompanyInventors: Mitsukuni Tsukihara, Mitsuaki Kabasawa, Yoshitaka Amano, Hiroshi Matsushita
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Patent number: 7597531Abstract: Embodiments of the invention are directed to a method of controlling a mover device The method includes generating a moving force from a moving force generating unit to move a processing base with respect to a movable base, thereby moving the processing base with respect to a fixed base as a result of the movement of the processing base with respect to the movable base; moving the movable base on the fixed base in the opposite direction to the moving direction of the processing base by virtue of a reaction force caused by the moving force generated from the moving force generating unit to move the processing base, so that the movable base moves in the opposite direction to the moving direction of the processing base on the fixed base. The method further includes controlling the moving velocity of the processing base with respect to the fixed base.Type: GrantFiled: January 28, 2005Date of Patent: October 6, 2009Assignee: SEN Corporation, an SHI and Axcelis CompanyInventors: Keiji Okada, Michiro Sugitani, Yoshitomo Hidaka, Junichi Murakami, Fumiaki Sato, Mitsukuni Tsukihara, Suguru Hirokawa, Masamitsu Shinozuka
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Publication number: 20080258074Abstract: In a beam processing apparatus including a beam scanner having a two electrodes type deflection scanning electrode, the beam scanner further includes shielding suppression electrode assemblies respectively at vicinities of upstream side and downstream side of the two electrodes type deflection scanning electrode and having openings in a rectangular shape for passing a charged particle beam. Each of the shielding suppression electrode assemblies is an assembly electrode comprising one sheet of a suppression electrode and two sheets of shielding ground electrodes interposing the suppression electrode. A total of front side portions and rear side portions of the two electrodes type deflection scanning electrode is shielded by the two sheets of shielding ground electrodes.Type: ApplicationFiled: April 21, 2008Publication date: October 23, 2008Applicant: SEN Corporation, an SHI and Axcelis CompanyInventors: Mitsukuni TSUKIHARA, Mitsuaki Kabasawa, Hiroshi Matsushita, Takanori Yagita, Yoshitaka Amano, Yoshito Fujii
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Publication number: 20080251734Abstract: An ion implantation apparatus reciprocally scans an ion beam extracted from an ion source and passed through a mass analysis magnet apparatus and a mass analysis slit and irradiates to a wafer. The ion beam is converged and shaped by providing a first quadrupole vertical focusing electromagnet at a section of a beam line from an outlet of the mass analysis magnet apparatus before incidence of the mass analysis slit and providing a second quadrupole vertical focusing electromagnet having an effective magnetic field effect larger than that of the first quadrupole focusing electromagnet at a section of the beam line from an outlet of the mass analysis slit before incidence on the beam scanner.Type: ApplicationFiled: April 10, 2008Publication date: October 16, 2008Applicant: SEN Corporation, an SHI and Axcelis CompanyInventors: Mitsukuni Tsukihara, Takanori Yagita, Yoshitaka Amano, Mitsuaki Kabasawa
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Publication number: 20080251713Abstract: An ion implantation apparatus according to the invention includes a park electrode as a deflecting apparatus arranged at a section of a beam line from an outlet of a mass analysis magnet apparatus to a front side of a mass analysis slit for deflecting an ion beam in a predetermined direction of being deviated from a beam trajectory line by an operation of an electric field. When the ion beam does not satisfy a desired condition, a park voltage is applied to the park electrode, thereby, the ion beam is brought into an evacuated state by being deflected from the beam trajectory line. As a result, the ion beam cannot pass through the mass analysis slit, and therefore, the ion beam which does not arrive at a wafer to prevent the ion beam which does not satisfy the condition from being irradiated to the wafer.Type: ApplicationFiled: April 10, 2008Publication date: October 16, 2008Applicant: SEN Corporation, an SHI and Axcelis CompanyInventors: Mitsukuni Tsukihara, Takanori Yagita, Hiroshi Sogabe, Toshio Yumiyama, Mitsuaki Kabasawa
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Publication number: 20080251737Abstract: A beam line before incidence on a beam scanner is arranged with an injector flag Faraday cup that detects a beam current by measuring a total beam amount of an ion beam to be able to be brought in and out thereto and therefrom. When the ion beam is shut off by placing the injector flag Faraday cup on a beam trajectory line, the ion beam impinges on graphite provided at the injector flag Faraday cup. At this occasion, even when the graphite is sputtered by the ion beam, since the injector flag Faraday cup is arranged on an upstream side of the beam scanner and the ion beam is shut off by the injector flag Faraday cup, particles of the sputtered graphite do not adhere to a peripheral member of the injector flag Faraday cup.Type: ApplicationFiled: April 10, 2008Publication date: October 16, 2008Applicant: SEN Corporation, An SHI and Axcelis CompanyInventors: Mitsukuni TSUKIHARA, Yoshito Fujii
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Patent number: 7429743Abstract: The present invention is a method to enhance accuracy of irradiation with beam for an irradiation system with a beam. The irradiation system comprises a beam generation source, a mass analysis device, a beam transformer, a scanner which swings the beam reciprocally with high speed, a beam parallelizing device, an acceleration/deceleration device, an energy filtering device, and beam monitors. The beam transformer comprises a vertically focusing synchronized quadrupole electromagnet syQD and a horizontally focusing synchronized quadrupole electromagnet syQF. Consequently, it is possible to correct at least one of a deviation in beam divergence angle and a deviation in beam size within a range between a center trajectory and an outer trajectory after swinging of the beam by the scanner.Type: GrantFiled: August 12, 2005Date of Patent: September 30, 2008Assignee: SEN CorporationInventors: Mitsuaki Kabasawa, Mitsukuni Tsukihara