Patents by Inventor Mitsuma Ohishi

Mitsuma Ohishi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Thin film transistor, liquid crystal display using thin film transistor, and method of manufacturing thin film transistor
    Patent number: 7410818
    Abstract: A semiconductor film, which is located over a gate electrode for forming a channel region between a source electrode and a drain electrode, has a width greater than a width of the source electrode and a width of the drain electrode located over the gate electrode. Irregularities are formed in a width direction of the semiconductor film on both edge portions in the channel region.
    Type: Grant
    Filed: November 22, 2006
    Date of Patent: August 12, 2008
    Assignee: NEC LCD Technologies, Ltd.
    Inventors: Mitsuma Ohishi, Satoshi Kimura
  • Thin film transistor, liquid crystal display using thin film transistor, and method of manufacturing thin film transistor
    Publication number: 20070063283
    Abstract: A semiconductor film, which is located over a gate electrode for forming a channel region between a source electrode and a drain electrode, has a width greater than a width of the source electrode and a width of the drain electrode located over the gate electrode. Irregularities are formed in a width direction of the semiconductor film on both edge portions in the channel region.
    Type: Application
    Filed: November 22, 2006
    Publication date: March 22, 2007
    Applicant: NEC LCD TECHNOLOGIES, LTD.
    Inventors: Mitsuma Ohishi, Satoshi Kimura
  • Thin film transistor, liquid crystal display using thin film transistor, and method of manufacturing thin film transistor
    Patent number: 7161212
    Abstract: A semiconductor film, which is located over a gate electrode for forming a channel region between a source electrode and a drain electrode, has a width greater than a width of the source electrode and a width of the drain electrode located over the gate electrode. Irregularities are formed in a width direction of the semiconductor film on both edge portions in the channel region.
    Type: Grant
    Filed: February 8, 2005
    Date of Patent: January 9, 2007
    Assignee: NEC LCD Technologies, Ltd.
    Inventors: Mitsuma Ohishi, Satoshi Kimura
  • Thin film transistor, liquid crystal display using thin film transistor, and method of manufacturing thin film transistor
    Publication number: 20050173762
    Abstract: A semiconductor film, which is located over a gate electrode for forming a channel region between a source electrode and a drain electrode, has a width greater than a width of the source electrode and a width of the drain electrode located over the gate electrode. Irregularities are formed in a width direction of the semiconductor film on both edge portions in the channel region.
    Type: Application
    Filed: February 8, 2005
    Publication date: August 11, 2005
    Applicant: NEC LCD Technologies, Ltd.
    Inventors: Mitsuma Ohishi, Satoshi Kimura