Patents by Inventor Mitsunori Aiko
Mitsunori Aiko has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240096744Abstract: A semiconductor chip (2,3) is mounted on the heat spreader (1). A frame (4) is bonded to an upper surface of the semiconductor chip (2,3). Mold resin (9) seals the heat spreader (1), the semiconductor chip (2,3) and the frame (4) and has a recess (10) provided on an upper surface of the mold resin (9). A heat dissipation plate (12) is externally attached to the recess (10) via a thermally conductive material (11) having thermal conductivity higher than that of the mold resin (9). The heat dissipation plate (12) is insulated from the semiconductor chip (2,3) and the frame (4) by the mold resin (9). The heat dissipation plate (12) is a flat plate having an upper surface and a lower surface which are opposite to each other and flat.Type: ApplicationFiled: August 10, 2021Publication date: March 21, 2024Applicant: Mitsubishi Electric CorporationInventors: Nobuyoshi KIMOTO, Mitsunori AIKO
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Publication number: 20220189851Abstract: It is an object to provide a technique allowing for suppression of the height of a protrusion from the surface of a semiconductor module. A semiconductor device includes: a semiconductor module having a first groove; a Belleville washer having a recess in an outer surface and a protrusion on an inner surface; and a screw passing through the hole of the Belleville washer and the first groove of the semiconductor module to fasten the semiconductor module and an attached body. A head of the screw is accommodated in the recess of the Belleville washer, and at least portion of the protrusion of the Belleville washer is accommodated in the first groove of the semiconductor module.Type: ApplicationFiled: June 25, 2019Publication date: June 16, 2022Applicant: Mitsubishi Electric CorporationInventors: Tsuyoshi TAKAYAMA, Takaaki SHIRASAWA, Mitsunori AIKO
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Patent number: 11302655Abstract: A semiconductor device includes a semiconductor element having an electrode, material of which is first metal, a lead frame through which a plurality of holes extend with an outer contour of the electrode being avoided in a first portion, and having the first portion, material of which is second metal, a bonding layer interposed between the first portion and the electrode, and solder being inside the plurality of holes and adjoining the bonding layer, the solder being thicker than the bonding layer. The plurality of holes have a plurality of first holes extending through the first portion in a thickness direction of the first portion. The bonding layer has a first bonding layer located on the electrode side and being an alloy of the first metal and tin, and a second bonding layer located on the first portion side and being an alloy of the second metal and tin. The plurality of first holes are located in an annular region inside the outer contour of the electrode.Type: GrantFiled: June 29, 2018Date of Patent: April 12, 2022Assignee: Mitsubishi Electric CorporationInventors: Nobuyoshi Kimoto, Mitsunori Aiko, Takaaki Shirasawa
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Publication number: 20210233869Abstract: A semiconductor device includes a semiconductor element having an electrode, material of which is first metal, a lead frame through which a plurality of holes extend with an outer contour of the electrode being avoided in a first portion, and having the first portion, material of which is second metal, a bonding layer interposed between the first portion and the electrode, and solder being inside the plurality of holes and adjoining the bonding layer, the solder being thicker than the bonding layer. The plurality of holes have a plurality of first holes extending through the first portion in a thickness direction of the first portion. The bonding layer has a first bonding layer located on the electrode side and being an alloy of the first metal and tin, and a second bonding layer located on the first portion side and being an alloy of the second metal and tin. The plurality of first holes are located in an annular region inside the outer contour of the electrode.Type: ApplicationFiled: June 29, 2018Publication date: July 29, 2021Applicant: Mitsubishi Electric CorporationInventors: Nobuyoshi KIMOTO, Mitsunori AIKO, Takaaki SHIRASAWA
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Patent number: 10950558Abstract: An object is to provide a technique for reducing process steps, and a stress generated at the peripheral portion of the joint portion between an electrode of a semiconductor element and a lead frame. A semiconductor device includes the following: a semiconductor element disposed on a heat spreader; a lead frame joined to an emitter electrode of the semiconductor element via solder, which is a joining material; a metal film disposed on a surface of the emitter electrode; and an anti-oxidation film disposed on a surface of the metal film. The metal film has a peripheral portion that is entirely exposed from the anti-oxidation film.Type: GrantFiled: March 27, 2017Date of Patent: March 16, 2021Assignee: Mitsubishi Electric CorporationInventors: Nobuyoshi Kimoto, Mitsunori Aiko, Takaaki Shirasawa
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Patent number: 10916483Abstract: An object of the present invention is to provide a semiconductor device having a structure in which a resin hardly enters between an insert electrode and a nut at a time of resin sealing. The semiconductor device according to the present invention includes an insert electrode having an insert hole into which a bolt is inserted from outside, a nut which has a screw hole to be screwed with the bolt and is disposed on an inside of the insert electrode so that the screw hole is communicated with the insert hole, at least one semiconductor element being electrically connected to the insert electrode, and a resin sealing the inside of the insert electrode, the nut, and the at least one semiconductor element, wherein a burr is provided on an outer periphery of a direct contact surface of the nut being in direct contact with the insert electrode.Type: GrantFiled: April 23, 2019Date of Patent: February 9, 2021Assignee: Mitsubishi Electric CorporationInventors: Takahiko Murakami, Mitsunori Aiko, Takaaki Shirasawa, Natsuki Tsuji
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Patent number: 10714404Abstract: A technique disclosed in the Description relates to a technique for improving the heat dissipation capability of a semiconductor element and the heat dissipation capability of a lead electrode without increasing the size of a product. A semiconductor device of the technique includes the following: a semiconductor element; a lead electrode having a lower surface connected to an upper surface of the semiconductor element at one end of the lead electrode, the lead electrode being an external terminal; a cooling mechanism disposed on a lower surface side of the semiconductor element; and a heat dissipation mechanism provided to be thermally joined between the lower surface of the lead electrode and the cooling mechanism, the lower surface being more adjacent to an other-end side of the lead electrode than the one end, the heat dissipation mechanism including at least one insulating layer.Type: GrantFiled: January 29, 2016Date of Patent: July 14, 2020Assignee: Mitsubishi Electric CorporationInventors: Ryoji Murai, Mitsunori Aiko, Takaaki Shirasawa
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Publication number: 20200013730Abstract: An object is to provide a technique for reducing process steps, and a stress generated at the peripheral portion of the joint portion between an electrode of a semiconductor element and a lead frame. A semiconductor device includes the following: a semiconductor element disposed on a heat spreader; a lead frame joined to an emitter electrode of the semiconductor element via solder, which is a joining material; a metal film disposed on a surface of the emitter electrode; and an anti-oxidation film disposed on a surface of the metal film. The metal film has a peripheral portion that is entirely exposed from the anti-oxidation film.Type: ApplicationFiled: March 27, 2017Publication date: January 9, 2020Applicant: Mitsubishi Electric CorporationInventors: Nobuyoshi KIMOTO, Mitsunori AIKO, Takaaki SHIRASAWA
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Publication number: 20190252276Abstract: An object of the present invention is to provide a semiconductor device having a structure in which a resin hardly enters between an insert electrode and a nut at a time of resin sealing. The semiconductor device according to the present invention includes an insert electrode having an insert hole into which a bolt is inserted from outside, a nut which has a screw hole to be screwed with the bolt and is disposed on an inside of the insert electrode so that the screw hole is communicated with the insert hole, at least one semiconductor element being electrically connected to the insert electrode, and a resin sealing the inside of the insert electrode, the nut, and the at least one semiconductor element, wherein a burr is provided on an outer periphery of a direct contact surface of the nut being in direct contact with the insert electrode.Type: ApplicationFiled: April 23, 2019Publication date: August 15, 2019Applicant: Mitsubishi Electric CorporationInventors: Takahiko MURAKAMI, Mitsunori AIKO, Takaaki SHIRASAWA, Natsuki TSUJI
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Patent number: 10304748Abstract: An object of the present invention is to provide a semiconductor device having a structure in which a resin hardly enters between an insert electrode and a nut at a time of resin sealing. The semiconductor device according to the present invention includes an insert electrode having an insert hole into which a bolt is inserted from outside, a nut which has a screw hole to be screwed with the bolt and is disposed on an inside of the insert electrode so that the screw hole is communicated with the insert hole, at least one semiconductor element being electrically connected to the insert electrode, and a resin sealing the inside of the insert electrode, the nut, and the at least one semiconductor element, wherein a burr is provided on an outer periphery of a direct contact surface of the nut being in direct contact with the insert electrode.Type: GrantFiled: July 27, 2015Date of Patent: May 28, 2019Assignee: Mitsubishi Electric CorporationInventors: Takahiko Murakami, Mitsunori Aiko, Takaaki Shirasawa, Natsuki Tsuji
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Patent number: 10224267Abstract: A first switching element and a second switching element are thermally connected to each other since the first switching element and the second switching element are fixed on a second substrate. An upper arm is capable of increasing the current capacity of the semiconductor device because of the parallel connection of the first switching element and the second switching element. The lower arm is capable of increasing the current capacity of the semiconductor device because of the parallel connection of the first switching element and the second switching element.Type: GrantFiled: July 16, 2013Date of Patent: March 5, 2019Assignee: Mitsubishi Electric CorporationInventors: Shintaro Araki, Mitsunori Aiko, Takaaki Shirasawa, Khalid Hassan Hussein
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Publication number: 20180350713Abstract: A technique disclosed in the Description relates to a technique for improving the heat dissipation capability of a semiconductor element and the heat dissipation capability of a lead electrode without increasing the size of a product. A semiconductor device of the technique includes the following: a semiconductor element; a lead electrode having a lower surface connected to an upper surface of the semiconductor element at one end of the lead electrode, the lead electrode being an external terminal; a cooling mechanism disposed on a lower surface side of the semiconductor element; and a heat dissipation mechanism provided to be thermally joined between the lower surface of the lead electrode and the cooling mechanism, the lower surface being more adjacent to an other-end side of the lead electrode than the one end, the heat dissipation mechanism including at least one insulating layer.Type: ApplicationFiled: January 29, 2016Publication date: December 6, 2018Applicant: Mitsubishi Electric CorporationInventors: Ryoji MURAI, Mitsunori AIKO, Takaaki SHIRASAWA
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Publication number: 20180068913Abstract: An object of the present invention is to provide a semiconductor device having a structure in which a resin hardly enters between an insert electrode and a nut at a time of resin sealing. The semiconductor device according to the present invention includes an insert electrode having an insert hole into which a bolt is inserted from outside, a nut which has a screw hole to be screwed with the bolt and is disposed on an inside of the insert electrode so that the screw hole is communicated with the insert hole, at least one semiconductor element being electrically connected to the insert electrode, and a resin sealing the inside of the insert electrode, the nut, and the at least one semiconductor element, wherein a burr is provided on an outer periphery of a direct contact surface of the nut being in direct contact with the insert electrode.Type: ApplicationFiled: July 27, 2015Publication date: March 8, 2018Applicant: Mitsubishi Electric CorporationInventors: Takahiko MURAKAMI, Mitsunori AIKO, Takaaki SHIRASAWA, Natsuki TSUJI
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Patent number: 9484927Abstract: A semiconductor device includes a semiconductor element having a gate and controlled with a gate voltage, a gate drive circuit which controls the gate voltage, an electrode connected to the semiconductor element, a principal current in the semiconductor element flowing through the electrode, a temperature sensing part which senses the temperature of the electrode, a generation section which generates, on the basis of the temperature sensed by the temperature sensing part, a first control signal for giving a maximum amount of energization to the semiconductor element in such a range that the temperature of the electrode does not exceed a predetermined temperature, and a comparison section which compares the first control signal and a second control signal transmitted from the outside for the purpose of controlling the gate voltage, and selects a selective control signal which is one of the control signals with which the temperature of the electrode can be limited.Type: GrantFiled: December 28, 2012Date of Patent: November 1, 2016Assignee: Mitsubishi Electric CorporationInventors: Mitsunori Aiko, Shintaro Araki
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Patent number: 9472538Abstract: Fixing a semiconductor element to a substrate, electrically connecting signal and main terminals to the semiconductor element, a terminal aggregate includes a frame portion, the signal terminal, the main terminal, which has a larger width than the signal terminal, and a dummy terminal, and forming a to-be-encapsulated body in which the substrate, the semiconductor element, and the terminal aggregate are integrated, mounting the to-be-encapsulated body on a lower mold half such that a plurality of blocks formed in the lower mold half are meshed with the signal, main, and dummy terminals with no space left therebetween after the mounting, placing a bottom surface of an upper mold half on top surfaces of the plurality of blocks, and top surfaces of the signal, main, and dummy terminals to form a cavity for the substrate and the semiconductor element, and performing molding by injecting mold resin into the cavity are included.Type: GrantFiled: July 4, 2013Date of Patent: October 18, 2016Assignee: Mitsubishi Electric CorporationInventors: Seiichiro Inokuchi, Mitsunori Aiko, Shintaro Araki, Natsuki Tsuji
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Patent number: 9455718Abstract: A semiconductor device includes a semiconductor element having a gate and controlled with a gate voltage, a gate drive circuit which controls the gate voltage, an electrode connected to the semiconductor element, a principal current in the semiconductor element flowing through the electrode, a temperature sensing part which senses the temperature of the electrode, a generation section which generates, on the basis of the temperature sensed by the temperature sensing part, a first control signal for giving a maximum amount of energization to the semiconductor element in such a range that the temperature of the electrode does not exceed a predetermined temperature, and a comparison section which compares the first control signal and a second control signal transmitted from the outside for the purpose of controlling the gate voltage, and selects a selective control signal which is one of the control signals with which the temperature of the electrode can be limited.Type: GrantFiled: December 28, 2012Date of Patent: September 27, 2016Assignee: Mitsubishi Electric CorporationInventors: Mitsunori Aiko, Shintaro Araki
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Publication number: 20160126168Abstract: A first switching element and a second switching element are thermally connected to each other since the first switching element and the second switching element are fixed on a second substrate. An upper arm is capable of increasing the current capacity of the semiconductor device because of the parallel connection of the first switching element and the second switching element. The lower arm is capable of increasing the current capacity of the semiconductor device because of the parallel connection of the first switching element and the second switching element.Type: ApplicationFiled: July 16, 2013Publication date: May 5, 2016Applicant: Mitsubishi Electric CorporationInventors: Shintaro ARAKI, Mitsunori AIKO, Takaaki SHIRASAWA, Khalid Hassan HUSSEIN
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Publication number: 20160079221Abstract: Fixing a semiconductor element to a substrate, electrically connecting signal and main terminals to the semiconductor element, a terminal aggregate includes a frame portion, the signal terminal, the main terminal, which has a larger width than the signal terminal, and a dummy terminal, and forming a to-be-encapsulated body in which the substrate, the semiconductor element, and the terminal aggregate are integrated, mounting the to-be-encapsulated body on a lower mold half such that a plurality of blocks formed in the lower mold half are meshed with the signal, main, and dummy terminals with no space left therebetween after the mounting, placing a bottom surface of an upper mold half on top surfaces of the plurality of blocks, and top surfaces of the signal, main, and dummy terminals to form a cavity for the substrate and the semiconductor element, and performing molding by injecting mold resin into the cavity are included.Type: ApplicationFiled: July 4, 2013Publication date: March 17, 2016Applicant: MITSUBISHI ELECTRIC CORPORATIONInventors: Seiichiro INOKUCHI, Mitsunori AIKO, Shintaro ARAKI, Natsuki TSUJI
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Patent number: 9283850Abstract: A semiconductor device of the present invention is a semiconductor device applicable in a cooling system including an ECU functioning as a setting part that sets target temperature of a refrigerant used to cool the semiconductor device, and a sensor functioning as a detector that detects the temperature of the refrigerant as refrigerant's temperature. The semiconductor device generates variable heating loss. The semiconductor device includes a heating controller that controls the heating loss in the semiconductor device such that the target temperature and the refrigerant's temperature become the same.Type: GrantFiled: September 14, 2012Date of Patent: March 15, 2016Assignee: Mitsubishi Electric CorporationInventors: Noboru Miyamoto, Mitsunori Aiko
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Publication number: 20150333757Abstract: A semiconductor device includes a semiconductor element having a gate and controlled with a gate voltage, a gate drive circuit which controls the gate voltage, an electrode connected to the semiconductor element, a principal current in the semiconductor element flowing through the electrode, a temperature sensing part which senses the temperature of the electrode, a generation section which generates, on the basis of the temperature sensed by the temperature sensing part, a first control signal for giving a maximum amount of energization to the semiconductor element in such a range that the temperature of the electrode does not exceed a predetermined temperature, and a comparison section which compares the first control signal and a second control signal transmitted from the outside for the purpose of controlling the gate voltage, and selects a selective control signal which is one of the control signals with which the temperature of the electrode can be limited.Type: ApplicationFiled: December 28, 2012Publication date: November 19, 2015Applicant: MITSUBISHI ELECTRIC CORPORATIONInventors: Mitsunori AIKO, Shintaro ARAKI