Patents by Inventor Mitsunori Ishisaka
Mitsunori Ishisaka has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11685992Abstract: According to one aspect thereof, there is provided a substrate processing apparatus including: a reaction tube including an outer tube and an inner tube; a manifold connected to an open end of the reaction tube; a lid configured to close one end of the manifold; a first gas supply pipe configured to supply a cleaning gas; and a second gas supply pipe configured to supply a purge gas of purging a space inside the manifold. The reaction tube includes: an exhaust space; an exhaust outlet communicating with the exhaust space; a first exhaust port provided in the inner tube so as to face a substrate accommodated in the inner tube; and second exhaust ports through which the exhaust space communicates with the space inside the manifold. At least one of the second exhaust ports promotes gas exhaust in the exhaust space distanced away from the first exhaust port.Type: GrantFiled: January 9, 2020Date of Patent: June 27, 2023Assignee: KOKUSAI ELECTRIC CORPORATIONInventors: Yusaku Okajima, Takafumi Sasaki, Hidenari Yoshida, Shuhei Saido, Mitsunori Ishisaka, Hidetoshi Mimura
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Publication number: 20200149159Abstract: According to one aspect thereof, there is provided a substrate processing apparatus including: a reaction tube including an outer tube and an inner tube; a manifold connected to an open end of the reaction tube; a lid configured to close one end of the manifold; a first gas supply pipe configured to supply a cleaning gas; and a second gas supply pipe configured to supply a purge gas of purging a space inside the manifold. The reaction tube includes: an exhaust space; an exhaust outlet communicating with the exhaust space; a first exhaust port provided in the inner tube so as to face a substrate accommodated in the inner tube; and second exhaust ports through which the exhaust space communicates with the space inside the manifold. At least one of the second exhaust ports promotes gas exhaust in the exhaust space distanced away from the first exhaust port.Type: ApplicationFiled: January 9, 2020Publication date: May 14, 2020Applicant: KOKUSAI ELECTRIC CORPORATIONInventors: Yusaku OKAJIMA, Takafumi SASAKI, Hidenari YOSHIDA, Shuhei SAIDO, Mitsunori ISHISAKA, Hidetoshi MIMURA
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Patent number: 10604839Abstract: A substrate processing apparatus, including: a processing chamber having a first and a second processing regions; a substrate mounting table rotatably installed in the processing chamber on which a substrate is mounted, and a rotation instrument configured to rotate the substrate mounting table such that the substrate passes through the first processing region and the second processing region in this order, at least one of the first and the second processing regions including: a gas supply part including a line-shaped opening portion extending in a radial direction of the substrate mounting table and configured to supply a gas from the opening portion into the region; and a gap holding member protruding from a ceiling of the processing chamber opposing the substrate, around the opening portion, toward the substrate such that a space on the substrate has a predetermined gap to serve as a passage of the supplied gas.Type: GrantFiled: August 14, 2015Date of Patent: March 31, 2020Assignee: KOKUSAI ELECTRIC CORPORATIONInventors: Tetsuaki Inada, Yuichi Wada, Mitsunori Ishisaka, Mitsuhiro Hirano, Sadayoshi Horii, Hideharu Itatani, Satoshi Takano, Motonari Takebayashi
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Publication number: 20160053373Abstract: A substrate processing apparatus, including: a processing chamber having a first and a second processing regions; a substrate mounting table rotatably installed in the processing chamber on which a substrate is mounted, and a rotation instrument configured to rotate the substrate mounting table such that the substrate passes through the first processing region and the second processing region in this order, at least one of the first and the second processing regions including: a gas supply part including a line-shaped opening portion extending in a radial direction of the substrate mounting table and configured to supply a gas from the opening portion into the region; and a gap holding member protruding from a ceiling of the processing chamber opposing the substrate, around the opening portion, toward the substrate such that a space on the substrate has a predetermined gap to serve as a passage of the supplied gas.Type: ApplicationFiled: August 14, 2015Publication date: February 25, 2016Applicant: HITACHI KOKUSAI ELECTRIC INC.Inventors: Tetsuaki INADA, Yuichi WADA, Mitsunori ISHISAKA, Mitsuhiro HIRANO, Sadayoshi HORII, Hideharu ITATANI, Satoshi TAKANO, Motonari TAKEBAYASHI
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Patent number: 9142435Abstract: Provided is a substrate processing apparatus including a partitioned susceptor and configured to heat a substrate uniformly for improving process quality and yield. The substrate stage comprises a plurality of susceptor segments embedded with heating units, a substrate stage unit comprising the plurality of susceptor segments arranged in a flat configuration to define a substrate placement surface, and a uniform heating part mounted at the substrate placement surface.Type: GrantFiled: March 24, 2009Date of Patent: September 22, 2015Assignee: Hitachi Kokusai Electric Inc.Inventor: Mitsunori Ishisaka
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Patent number: 8906161Abstract: A tubular electrode (215) and a tubular magnet (216) are installed on an external section of a processing furnace (202) for an MMT device. A susceptor (217) for holding a wafer (200) is installed inside a processing chamber (201) of the processing furnace. A gate valve (244) for conveying the wafer into and out of the processing chamber; and a shower head (236) for spraying processing gas in a shower onto the wafer, are installed inside the processing furnace. A high frequency electrode (2) and a heater (3) are installed inside the susceptor (217) with a clearance between them and the walls forming the space. The clearances formed between the walls forming the space in the susceptor and the high frequency electrode and the heater prevent damage to the high frequency electrode and the heater even if a thermal expansion differential occurs between the high frequency electrode, the heater and the susceptor.Type: GrantFiled: June 30, 2009Date of Patent: December 9, 2014Assignee: Hitachi Kokusai Electric Inc.Inventors: Katsuhisa Kasanami, Toshimitsu Miyata, Mitsunori Ishisaka
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Publication number: 20120258018Abstract: There is provided a substrate procession apparatus, comprising: a processing chamber configured to house a plurality of substrates with a laminated film formed thereon which is composed of any one of copper-indium, copper-gallium, or copper-indium-gallium; a reaction tube formed so as to constitute the processing chamber; a gas supply tube configured to introduce elemental selenium-containing gas or elemental sulfur-containing gas to the processing chamber; an exhaust tube configured to exhaust an atmosphere in the processing chamber; heating section provided so as to surround the reaction tube; and a fan configured to forcibly circulate the atmosphere in the processing chamber in a short-side direction of the plurality of glass substrates, on surfaces of the plurality of glass substrates.Type: ApplicationFiled: March 22, 2012Publication date: October 11, 2012Applicant: HITACHI KOKUSAI ELECTRIC INC.Inventors: Eisuke NISHITANI, Yasuo KUNII, Kazuyuki TOYODA, Hidenari YOSHIDA, Mitsunori ISHISAKA
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Patent number: 8197638Abstract: Wafer contamination is prevented, while preventing damage to a high-frequency electrode and a susceptor. A main body 41 of the susceptor 40 of an MMT apparatus is composed of a heater arranging plate 42, an electrode arranging plate 48, and a supporting plate 56 all made from quartz. A circular electrode arranging hole 49 with a fixed depth is concentrically formed on the upper surface of the electrode arranging plate 48, and quadrangular pillars 50 are formed protruding in a matrix on the bottom of the electrode arranging hole 49. Multiple insertion holes 52 are formed in a disk-shaped high-frequency electrode 51, and the high-frequency electrode 51 is installed in the electrode arranging hole 49 by inserting each pillar 50 into each insertion hole 52. The gaps Sa and Sb are provided between the high-frequency electrode 51 and the electrode arranging plate 48. The pillar 50 boosts the strength of the electrode arranging plate 48.Type: GrantFiled: March 4, 2005Date of Patent: June 12, 2012Assignee: Hitachi Kokusai Electric Inc.Inventors: Mitsunori Ishisaka, Toshimitsu Miyata
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Patent number: 7842160Abstract: A tubular electrode (215) and a tubular magnet (216) are installed on an external section of a processing furnace (202) for an MMT device. A susceptor (217) for holding a wafer (200) is installed inside a processing chamber (201) of the processing furnace. A gate valve (244) for conveying the wafer into and out of the processing chamber; and a shower head (236) for spraying processing gas in a shower onto the wafer, are installed inside the processing furnace. A high frequency electrode (2) and a heater (3) are installed inside the susceptor (217) with a clearance between them and the walls forming the space. The clearances formed between the walls forming the space in the susceptor and the high frequency electrode and the heater prevent damage to the high frequency electrode and the heater even if a thermal expansion differential occurs between the high frequency electrode, the heater and the susceptor.Type: GrantFiled: May 14, 2008Date of Patent: November 30, 2010Assignee: Hitachi Kokusai Electric Inc.Inventors: Katsuhisa Kasanami, Toshimitsu Miyata, Mitsunori Ishisaka
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Publication number: 20090277588Abstract: A tubular electrode (215) and a tubular magnet (216) are installed on an external section of a processing furnace (202) for an MMT device. A susceptor (217) for holding a wafer (200) is installed inside a processing chamber (201) of the processing furnace. A gate valve (244) for conveying the wafer into and out of the processing chamber; and a shower head (236) for spraying processing gas in a shower onto the wafer, are installed inside the processing furnace. A high frequency electrode (2) and a heater (3) are installed inside the susceptor (217) with a clearance between them and the walls forming the space. The clearances formed between the walls forming the space in the susceptor and the high frequency electrode and the heater prevent damage to the high frequency electrode and the heater even if a thermal expansion differential occurs between the high frequency electrode, the heater and the susceptor.Type: ApplicationFiled: June 30, 2009Publication date: November 12, 2009Applicant: Hitachi Kokusai Electric Inc.Inventors: Katsuhisa KASANAMI, Toshimitsu MIYATA, Mitsunori ISHISAKA
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Publication number: 20090241836Abstract: Provided is a substrate processing apparatus including a partitioned susceptor and configured to heat a substrate uniformly for improving process quality and yield. The substrate stage comprises a plurality of susceptor segments embedded with heating units, a substrate stage unit comprising the susceptor segments arranged in a flat configuration to define a substrate placement surface, and a uniform heat part mounted at the substrate placement surface.Type: ApplicationFiled: March 24, 2009Publication date: October 1, 2009Inventor: Mitsunori ISHISAKA
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Publication number: 20080223524Abstract: A tubular electrode (215) and a tubular magnet (216) are installed on an external section of a processing furnace (202) for an MMT device. A susceptor (217) for holding a wafer (200) is installed inside a processing chamber (201) of the processing furnace. A gate valve (244) for conveying the wafer into and out of the processing chamber; and a shower head (236) for spraying processing gas in a shower onto the wafer, are installed inside the processing furnace. A high frequency electrode (2) and a heater (3) are installed inside the susceptor (217) with a clearance between them and the walls forming the space. The clearances formed between the walls forming the space in the susceptor and the high frequency electrode and the heater prevent damage to the high frequency electrode and the heater even if a thermal expansion differential occurs between the high frequency electrode, the heater and the susceptor.Type: ApplicationFiled: May 14, 2008Publication date: September 18, 2008Applicant: Hitachi Kokusai Electric Inc.Inventors: Katsuhisa Kasanami, Toshimitsu Miyata, Mitsunori Ishisaka
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Publication number: 20080017111Abstract: Wafer contamination is prevented, while preventing damage to a high-frequency electrode and a susceptor. A main body 41 of the susceptor 40 of an MMT apparatus is composed of a heater arranging plate 42, an electrode arranging plate 48, and a supporting plate 56 all made from quartz. A circular electrode arranging hole 49 with a fixed depth is concentrically formed on the upper surface of the electrode arranging plate 48, and quadrangular pillars 50 are formed protruding in a matrix on the bottom of the electrode arranging hole 49. Multiple insertion holes 52 are formed in a disk-shaped high-frequency electrode 51, and the high-frequency electrode 51 is installed in the electrode arranging hole 49 by inserting each pillar 50 into each insertion hole 52. The gaps Sa and Sb are provided between the high-frequency electrode 51 and the electrode arranging plate 48. The pillar 50 boosts the strength of the electrode arranging plate 48.Type: ApplicationFiled: March 4, 2005Publication date: January 24, 2008Inventors: Mitsunori Ishisaka, Toshimitsu Miyata
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Publication number: 20060151117Abstract: A tubular electrode (215) and a tubular magnet (216) are installed on an external section of a processing furnace (202) for an MMT device. A susceptor (217) for holding a wafer (200) is installed inside a processing chamber (201) of the processing furnace. A gate valve (244) for conveying the wafer into and out of the processing chamber; and a shower head (236) for spraying processing gas in a shower onto the wafer, are installed inside the processing furnace. A high frequency electrode (2) and a heater (3) are installed inside the susceptor (217) with a clearance between them and the walls forming the space. The clearances formed between the walls forming the space in the susceptor and the high frequency electrode and the heater prevent damage to the high frequency electrode and the heater even if a thermal expansion differential occurs between the high frequency electrode, the heater and the susceptor.Type: ApplicationFiled: March 30, 2004Publication date: July 13, 2006Applicant: Hitachi Kokusai Electronic Inc.Inventors: Katsuhisa Kasanami, Toshimitsu Miyata, Mitsunori Ishisaka