Patents by Inventor Mitsunori Iwamuro

Mitsunori Iwamuro has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8410000
    Abstract: The method for producing a photovoltaic cell includes applying, on a partial region of one surface side of a semiconductor substrate, a first p-type diffusion layer forming composition including a p-type impurity-containing glass powder and a dispersion medium; applying, on at least a region other than the partial region on the surface of the semiconductor substrate, a second p-type diffusion layer forming composition which includes a p-type impurity-containing glass powder and a dispersion medium and in which a concentration of the p-type impurity is lower than that of the first p-type diffusion layer forming composition, where the first p-type diffusion layer forming composition is applied; heat-treating the semiconductor substrate on which the first p-type diffusion layer forming composition and the second p-type diffusion layer forming composition are applied to form a p-type diffusion layer; and forming an electrode on the partial region.
    Type: Grant
    Filed: November 17, 2011
    Date of Patent: April 2, 2013
    Assignee: Hitachi Chemical Company, Ltd.
    Inventors: Youichi Machii, Masato Yoshida, Takeshi Nojiri, Kaoru Okaniwa, Mitsunori Iwamuro, Shuuichirou Adachi, Akihiro Orita, Tetsuya Satou, Keiko Kizawa
  • Publication number: 20130078759
    Abstract: The composition for forming an n-type diffusion layer in accordance with the present invention contains a glass powder and a dispersion medium, in which the glass powder includes an donor element and a total amount of the life time killer element in the glass powder is 1000 ppm or less. An n-type diffusion layer and a photovoltaic cell having an n-type diffusion layer are prepared by applying the composition for forming an n-type diffusion layer, followed by a thermal diffusion treatment.
    Type: Application
    Filed: April 22, 2011
    Publication date: March 28, 2013
    Inventors: Yoichi Machii, Masato Yoshida, Takeshi Nojiri, Kaoru Okaniwa, Mitsunori Iwamuro, Shuichiro Adachi, Tetsuya Sato, Keiko Kizawa
  • Patent number: 8404599
    Abstract: The method for producing a photovoltaic cell includes applying, on a partial region of one surface side of a semiconductor substrate, a first n-type diffusion layer forming composition including an n-type impurity-containing glass powder and a dispersion medium; applying, on at least a region other than the partial region on the surface of the semiconductor substrate, a second n-type diffusion layer forming composition which includes an n-type impurity-containing glass powder and a dispersion medium and in which a concentration of the n-type impurity is lower than that of the first n-type diffusion layer forming composition, where the first n-type diffusion layer forming composition is applied; heat-treating the semiconductor substrate on which the first n-type diffusion layer forming composition and the second n-type diffusion layer forming composition are applied to form an n-type diffusion layer; and forming an electrode on the partial region.
    Type: Grant
    Filed: November 17, 2011
    Date of Patent: March 26, 2013
    Assignee: Hitachi Chemical Company, Ltd.
    Inventors: Youichi Machii, Masato Yoshida, Takeshi Nojiri, Kaoru Okaniwa, Mitsunori Iwamuro, Shuuichirou Adachi, Akihiro Orita, Tetsuya Satou, Keiko Kizawa
  • Publication number: 20130071968
    Abstract: The composition for forming a composition for forming a p-type diffusion layer, the composition containing a glass powder and a dispersion medium, in which the glass powder includes an acceptor element and a total amount of a life time killer element in the glass powder is 1000 ppm or less. A p-type diffusion layer and a photovoltaic cell having a p-type diffusion layer are prepared by applying the composition for forming a p-type diffusion layer, followed by a thermal diffusion treatment.
    Type: Application
    Filed: April 22, 2011
    Publication date: March 21, 2013
    Inventors: Yoichi Machii, Masato Yoshida, Takeshi Nojiri, Kaoru Okaniwa, Mitsunori Iwamuro, Shuichiro Adachi, Tetsuya Sato, Keiko Kizawa
  • Publication number: 20130025670
    Abstract: The semiconductor substrate of the present invention contains a semiconductor layer and an impurity diffusion layer containing at least one impurity atom selected from the group consisting of an n-type impurity atom and a p-type impurity atom and at least one metallic atom selected from the group consisting of K, Na, Li, Ba, Sr, Ca, Mg, Be, Zn, Pb, Cd, V, Sn, Zr, Mo, La, Nb, Ta, Y, Ti, Ge, Te, and Lu.
    Type: Application
    Filed: July 24, 2012
    Publication date: January 31, 2013
    Inventors: Tetsuya SATO, Masato YOSHIDA, Takeshi NOJIRI, Yoichi MACHII, Mitsunori IWAMURO, Akihiro ORITA
  • Publication number: 20130025669
    Abstract: The invention provides a photovoltaic cell substrate that is a semiconductor substrate comprising an n-type diffusion layer, an n+-type diffusion layer having a higher n-type impurity concentration than the n-type diffusion layer, and a concave portion at a surface of the n+-type diffusion layer.
    Type: Application
    Filed: July 24, 2012
    Publication date: January 31, 2013
    Inventors: Tetsuya SATO, Masato Yoshida, Takeshi Nojiri, Youichi Machii, Mitsunori Iwamuro, Akihiro Orita
  • Publication number: 20120313199
    Abstract: The invention provides a material for forming a passivation film for a semiconductor substrate. The material includes a polymer compound having an anionic group or a cationic group.
    Type: Application
    Filed: May 25, 2012
    Publication date: December 13, 2012
    Inventors: Akihiro Orita, Masato Yoshida, Takeshi Nojiri, Yoichi Machii, Mitsunori Iwamuro, Shuchiro Adachi, Tetsuya Sato, Toru Tanaka
  • Publication number: 20120260981
    Abstract: The present invention provides a paste composition for an electrode, the paste composition including phosphorus-tin-containing copper alloy particles, glass particles, a solvent and a resin. The present invention also provides a photovoltaic cell element having an electrode formed from the paste composition, and a photovoltaic cell.
    Type: Application
    Filed: April 11, 2012
    Publication date: October 18, 2012
    Inventors: Shuichiro ADACHI, Masato Yoshida, Takeshi Nojiri, Mitsunori Iwamuro, Keiko Kizawa, Takuya Aoyagi, Hiroki Yamamoto, Takashi Naito, Takahiko Kato
  • Publication number: 20120260988
    Abstract: A paste composition for an electrode, the paste composition comprising: phosphorous-containing copper alloy particles in which the content of phosphorous is from 6% by mass to 8% by mass; glass particles; a solvent; and a resin.
    Type: Application
    Filed: April 5, 2012
    Publication date: October 18, 2012
    Inventors: Shuichiro Adachi, Masato Yoshida, Takeshi Nojiri, Mitsunori Iwamuro, Keiko Kizawa, Takuya Aoyagi, Hiroki Yamamoto, Takashi Naito, Takahiko Kato
  • Publication number: 20120260982
    Abstract: The present invention provides a paste composition for an electrode, the paste composition comprising phosphorus-containing copper alloy particles, tin-containing particles, glass particles, a solvent and a resin. The present invention also provides a photovoltaic cell element having an electrode formed from the paste composition, and a photovoltaic cell.
    Type: Application
    Filed: April 11, 2012
    Publication date: October 18, 2012
    Inventors: Shuichiro ADACHI, Masato Yoshida, Takeshi Nojiri, Mitsunori Iwamuro, Keiko Kizawa, Takuya Aoyagi, Hiroki Yamamoto, Takashi Naito, Takahiko Kato
  • Publication number: 20120184062
    Abstract: The composition for forming an n-type diffusion layer in accordance with the present invention contains a donor element-containing glass powder and a dispersion medium. An n-type diffusion layer and a photovoltaic cell having an n-type diffusion layer are prepared by applying the composition for forming an n-type diffusion layer, followed by a thermal diffusion treatment.
    Type: Application
    Filed: March 22, 2012
    Publication date: July 19, 2012
    Inventors: YOUICHI MACHII, Masato Yoshida, Takeshi Nojiri, Kaoru Okaniwa, Mitsunori Iwamuro, Shuuichirou Adachi, Takuya Aoyagi
  • Publication number: 20120178201
    Abstract: The composition for forming an n-type diffusion layer in accordance with the present invention contains a donor element-containing glass powder and a dispersion medium. An n-type diffusion layer and a photovoltaic cell having an n-type diffusion layer are prepared by applying the composition for forming an n-type diffusion layer, followed by a thermal diffusion treatment.
    Type: Application
    Filed: March 23, 2012
    Publication date: July 12, 2012
    Inventors: YOUICHI MACHII, Masato Yoshida, Takeshi Nojiri, Kaoru Okaniwa, Mitsunori Iwamuro, Shuuichirou Adachi, Takuya Aoyagi
  • Publication number: 20120122263
    Abstract: The method for producing a photovoltaic cell includes applying, on a partial region of one surface side of a semiconductor substrate, a first n-type diffusion layer forming composition including an n-type impurity-containing glass powder and a dispersion medium; applying, on at least a region other than the partial region on the surface of the semiconductor substrate, a second n-type diffusion layer forming composition which includes an n-type impurity-containing glass powder and a dispersion medium and in which a concentration of the n-type impurity is lower than that of the first n-type diffusion layer forming composition, where the first n-type diffusion layer forming composition is applied; heat-treating the semiconductor substrate on which the first n-type diffusion layer forming composition and the second n-type diffusion layer forming composition are applied to form an n-type diffusion layer; and forming an electrode on the partial region.
    Type: Application
    Filed: November 17, 2011
    Publication date: May 17, 2012
    Inventors: Youichi MACHII, Masato Yoshida, Takeshi Nojiri, Kaoru Okaniwa, Mitsunori Iwamuro, Shuuichirou Adachi, Akihiro Orita, Tetsuya Satou, Keiko Kizawa
  • Publication number: 20120122264
    Abstract: The method for producing a photovoltaic cell includes applying, on a partial region of one surface side of a semiconductor substrate, a first p-type diffusion layer forming composition including a p-type impurity-containing glass powder and a dispersion medium; applying, on at least a region other than the partial region on the surface of the semiconductor substrate, a second p-type diffusion layer forming composition which includes a p-type impurity-containing glass powder and a dispersion medium and in which a concentration of the p-type impurity is lower than that of the first p-type diffusion layer forming composition, where the first p-type diffusion layer forming composition is applied; heat-treating the semiconductor substrate on which the first p-type diffusion layer forming composition and the second p-type diffusion layer forming composition are applied to form a p-type diffusion layer; and forming an electrode on the partial region.
    Type: Application
    Filed: November 17, 2011
    Publication date: May 17, 2012
    Inventors: Youichi MACHII, Masato YOSHIDA, Takeshi NOJIRI, Kaoru OKANIWA, Mitsunori IWAMURO, Shuuichirou ADACHI, Akihiro ORITA, Tetsuya SATOU, Keiko KIZAWA
  • Publication number: 20120122265
    Abstract: The method for producing a photovoltaic cell includes applying an n-type diffusion layer forming composition including an n-type impurity-containing glass powder and a dispersion medium onto a first region on one surface side of a semiconductor substrate; applying a p-type diffusion layer forming composition including a p-type impurity-containing glass powder and a dispersion medium onto a second region other than the first region on the surface of the semiconductor substrate where the first region is provided; a thermal diffusion process in which an n-type diffusion layer and a p-type diffusion layer are formed by heat-treating the semiconductor substrate onto which the n-type diffusion layer forming composition and the p-type diffusion layer forming composition are applied; and forming an electrode on each of the first region where the n-type diffusion layer is formed and the second region where the p-type diffusion layer is formed, respectively.
    Type: Application
    Filed: November 17, 2011
    Publication date: May 17, 2012
    Inventors: Youichi Machii, Masato Yoshida, Takeshi Nojiri, Kaoru Okaniwa, Mitsunori Iwamuro, Shuuichirou Adachi, Akihiro Orita, Tetsuya Satou, Keiko Kizawa
  • Publication number: 20110277831
    Abstract: The paste composition for an electrode are constituted with copper-containing particles having a peak temperature of an exothermic peak showing a maximum area in the simultaneous ThermoGravimetry/Differential Thermal Analysis of 280° C. or higher, glass particles, a solvent, and a resin. Further, the photovoltaic cell has an electrode formed by using the paste composition for a photovoltaic cell electrode.
    Type: Application
    Filed: January 25, 2011
    Publication date: November 17, 2011
    Inventors: Masato YOSHIDA, Takeshi Nojiri, Mitsunori Iwamuro, Shuuichirou Adachi, Keiko Kizawa, Takuya Aoyagi, Hiroki Yamamoto, Takashi Naito, Takahiko Kato
  • Publication number: 20110256658
    Abstract: In a method for producing a photovoltaic cell, the improvement comprising: 1) coating a portion of a semiconductor substrate with a layer of a composition comprising donor element-containing glass particles and a dispersion medium, and 2) heating the coated semiconductor substrate to a temperature sufficient to cause donor element diffusion from the glass particles into the semiconductor substrate so as to form an n-type diffusion region in the semiconductor substrate.
    Type: Application
    Filed: January 25, 2011
    Publication date: October 20, 2011
    Inventors: YOUICHI MACHII, Masato Yoshida, Takashi Nojiri, Kaoru Okaniwa, Mitsunori Iwamuro, Shuuichirou Adachi, Akihiro Orita, Tetsuya Sato, Keiko Kizawa
  • Publication number: 20110212564
    Abstract: In a method for producing a photovoltaic cell, the improvement comprising: 1) coating a portion of a semiconductor substrate with a layer of a composition comprising acceptor element-containing glass particles and a dispersion medium, and 2) heating the coated semiconductor substrate to a temperature sufficient to cause acceptor element diffusion from the glass particles into the semiconductor substrate so as to form an p-type diffusion region in the semiconductor substrate.
    Type: Application
    Filed: January 25, 2011
    Publication date: September 1, 2011
    Inventors: YOUICHI MACHII, Masato Yoshida, Takeshi Nojiri, Kaoru Okaniwa, Mitsunori Iwamuro, Shuuichirou Adachi, Akihiro Orita, Tetsuya Sato, Keiko Kizawa
  • Publication number: 20110209751
    Abstract: The paste composition for an electrode according to the present invention includes metal particles containing copper as a main component, a flux, glass particles, a solvent, and a resin. Further, a photovoltaic cell according to the present invention has an electrode formed by using the paste composition for an electrode.
    Type: Application
    Filed: January 25, 2011
    Publication date: September 1, 2011
    Inventors: Takeshi Nojiri, Masato Yoshida, Mitsunori Iwamuro, Shuuichirou Adachi, Keiko Kizawa, Takuya Aoyagi, Hiroki Yamamoto, Takashi Naito, Takahiko Kato
  • Publication number: 20110195540
    Abstract: The composition for forming a p-type diffusion layer in accordance with the present invention contains an acceptor element-containing glass powder and a dispersion medium. A p-type diffusion layer and a photovoltaic cell having a p-type diffusion layer are prepared by applying the composition for forming a p-type diffusion layer, followed by a thermal diffusion treatment.
    Type: Application
    Filed: January 25, 2011
    Publication date: August 11, 2011
    Inventors: YOUICHI MACHII, Masato Yoshida, Takeshi Nojiri, Kaoru Okaniwa, Mitsunori Iwamuro, Shuuichirou Adachi