Patents by Inventor Mitsunori Kimura
Mitsunori Kimura has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11848599Abstract: A drive circuit for a switch drives an upper-arm switch and a lower-arm switch that include body diodes. Of the body diodes in upper- and lower-arm switches, the diode through which a feedback current flows during a dead time is a target diode. Of the upper- and lower-arm switches, the switch that includes the target diode is a target switch. The remaining switch is an opposing arm switch. The drive circuit maintains an electric potential of a control terminal relative to a second terminal of the target switch at a negative voltage over a period from a timing subsequent to a start timing of a dead time immediately after the target switch is switched to an off-state until a point within a period over which the opposing arm switch is set to an on-state, and subsequently maintains the electric potential at an off-voltage until a next dead time is ended.Type: GrantFiled: April 6, 2020Date of Patent: December 19, 2023Assignee: DENSO CORPORATIONInventors: Mitsunori Kimura, Yoshinori Hayashi, Kengo Mochiki
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Publication number: 20220231617Abstract: An electric power conversion apparatus includes a semiconductor module, a control circuit board and a wireless communication unit. The semiconductor module has at least one semiconductor element built therein. The control circuit board is configured to control the semiconductor module. The wireless communication unit is configured to wirelessly communicate electrical signals between the semiconductor module and the control circuit board. The wireless communication unit includes a first communication device provided on the control circuit board so as to face the semiconductor module, and a second communication device provided on the semiconductor module so as to face the control circuit board. Moreover, there are no obstacles on a straight path between the first and second communication devices.Type: ApplicationFiled: April 4, 2022Publication date: July 21, 2022Applicant: DENSO CORPORATIONInventors: Hiromi ICHIJO, Mitsunori KIMURA
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Publication number: 20220165712Abstract: A power module includes three switching elements including a third switching element, a second switching element, and a third switching element. Each of the switching elements includes two positive electrode terminals including a third positive electrode terminal and a second positive electrode terminal, which are connected to a drain electrode. Each of the switching elements includes one negative electrode terminal including a negative electrode terminal connected to a source electrode. In the power module, a total number of the positive electrode terminals and the negative electrode terminals is three.Type: ApplicationFiled: February 8, 2022Publication date: May 26, 2022Inventors: TETSUYA MATSUOKA, MITSUNORI KIMURA, KAZUTOSHI SHIOMI
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Patent number: 10855269Abstract: In a drive circuit, one of an upper-arm switch and a lower-arm switch being in an on state by a main driver is referred to as a target arm switch. The other of the upper-arm switch and the lower-arm switch being in an off state by the main driver is referred to as an opposite arm switch. An intrinsic diode connected in antiparallel to the opposite arm switch is referred to as an opposite arm diode. The drive circuit includes a protective driver configured to determine whether a failure has occurred in the target arm switch. The protective driver is configured to change the target arm switch from the on state to the off state, and the opposite arm switch from the off state to the on state upon determining that a failure has occurred in the target arm switch.Type: GrantFiled: March 13, 2019Date of Patent: December 1, 2020Assignee: DENSO CORPORATIONInventors: Kengo Mochiki, Mitsunori Kimura, Yoshinori Hayashi
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Publication number: 20200235653Abstract: A drive circuit for a switch drives an upper-arm switch and a lower-arm switch that include body diodes. Of the body diodes in upper- and lower-arm switches, the diode through which a feedback current flows during a dead time is a target diode. Of the upper- and lower-arm switches, the switch that includes the target diode is a target switch. The remaining switch is an opposing arm switch. The drive circuit maintains an electric potential of a control terminal relative to a second terminal of the target switch at a negative voltage over a period from a timing subsequent to a start timing of a dead time immediately after the target switch is switched to an off-state until a point within a period over which the opposing arm switch is set to an on-state, and subsequently maintains the electric potential at an off-voltage until a next dead time is ended.Type: ApplicationFiled: April 6, 2020Publication date: July 23, 2020Applicant: DENSO CORPORATIONInventors: Mitsunori KIMURA, Yoshinori HAYASHI, Kengo MOCHIKI
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Patent number: 10715053Abstract: A power conversion apparatus is provided in which an upper arm semiconductor device, a lower arm semiconductor device and a capacitor. At least either upper arm semiconductor device or lower arm semiconductor device constitutes a parallel-connected body. In an opposite arm against the parallel-connected body, a permissible element is provided. In the switching elements that constitute the parallel-connected body, a last off element and a non-last off circuit are identified. Inductance of a last off closed circuit where current flows through the last off element, reflux element in the opposite arm and the capacitor is smaller than inductance of a non-last off closed circuit where current flows through the last off element, reflux element in the opposite arm and the capacitor.Type: GrantFiled: March 16, 2018Date of Patent: July 14, 2020Assignee: DENSO CORPORATIONInventors: Mitsunori Kimura, Kengo Mochiki
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Patent number: 10424570Abstract: A power conversion apparatus performs power conversion. The power conversion apparatus includes a semiconductor module and a cooler. The semiconductor module includes an insulated-gate bipolar transistor, a metal-oxide-semiconductor field-effect transistor, and a lead frame. The insulated-gate bipolar transistor and the metal-oxide-semiconductor field-effect transistor are connected in parallel to each other and provided on the same lead frame. The cooler has a coolant flow passage. The coolant flow passage extends such that the coolant flow passage and the lead frame of the semiconductor module are opposed to each other. The semiconductor module is configured such that the metal-oxide-semiconductor field-effect transistor is not disposed further downstream than the insulated-gate bipolar transistor in a flow direction of a coolant in the coolant flow passage of the cooler.Type: GrantFiled: April 17, 2017Date of Patent: September 24, 2019Assignee: DENSO CORPORATIONInventors: Mitsunori Kimura, Hiroshi Shimizu, Kengo Mochiki, Yasuyuki Ohkouchi, Yuu Yamahira, Tetsuya Matsuoka, Kazuma Fukushima
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Publication number: 20190288678Abstract: In a drive circuit, one of an upper-arm switch and a lower-arm switch being in an on state by a main driver is referred to as a target arm switch. The other of the upper-arm switch and the lower-arm switch being in an off state by the main driver is referred to as an opposite arm switch. An intrinsic diode connected in antiparallel to the opposite arm switch is referred to as an opposite arm diode. The drive circuit includes a protective driver configured to determine whether a failure has occurred in the target arm switch. The protective driver is configured to change the target arm switch from the on state to the off state, and the opposite arm switch from the off state to the on state upon determining that a failure has occurred in the target arm switch.Type: ApplicationFiled: March 13, 2019Publication date: September 19, 2019Applicant: DENSO CORPORATIONInventors: Kengo MOCHIKI, Mitsunori KIMURA, Yoshinori HAYASHI
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Patent number: 10396651Abstract: A power conversion apparatus includes a semiconductor module including a semiconductor device and a control circuit unit controlling the semiconductor module. The semiconductor module has main and subsidiary semiconductor devices connected in parallel. The control circuit unit performs control such that the subsidiary semiconductor device is turned on after the main semiconductor device is turned on, and the main semiconductor device is turned off after the subsidiary semiconductor device is turned off. The control circuit unit performs control such that, one of the turn-on and turn-off switching timings has a switching speed faster than that of the other of the switching timings. The semiconductor module is configured such that, at a high-speed switching timing, an induction current directed to turn off the subsidiary semiconductor device is generated in a control terminal of the subsidiary semiconductor device depending on temporal change of a main current flowing to the main semiconductor device.Type: GrantFiled: July 26, 2018Date of Patent: August 27, 2019Assignee: DENSO CORPORATIONInventors: Kengo Mochiki, Mitsunori Kimura, Hiroshi Shimizu, Yasuyuki Ohkouchi, Yuu Yamahira, Tetsuya Matsuoka, Kazuma Fukushima
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Patent number: 10193445Abstract: A control device is applied for a power supply system that includes two boost converters. The two boost converters boosts inputted direct-current voltages to predetermined output voltages and output ends of the two boost converters are connected in parallel with each other. The control device includes a switching portion and a control portion. The switching portion controls switching of a switching element included in each of the two boost converters. The control portion shifts switching timings of the switching elements of the two boost converters from each other.Type: GrantFiled: September 27, 2016Date of Patent: January 29, 2019Assignee: DENSO CORPORATIONInventors: Daisuke Suekawa, Mitsunori Kimura
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Publication number: 20180331617Abstract: A power conversion apparatus includes a semiconductor module including a semiconductor device and a control circuit unit controlling the semiconductor module. The semiconductor module has main and subsidiary semiconductor devices connected in parallel. The control circuit unit performs control such that the subsidiary semiconductor device is turned on after the main semiconductor device is turned on, and the main semiconductor device is turned off after the subsidiary semiconductor device is turned off. The control circuit unit performs control such that, one of the turn-on and turn-off switching timings has a switching speed faster than that of the other of the switching timings. The semiconductor module is configured such that, at a high-speed switching timing, an induction current directed to turn off the subsidiary semiconductor device is generated in a control terminal of the subsidiary semiconductor device depending on temporal change of a main current flowing to the main semiconductor device.Type: ApplicationFiled: July 26, 2018Publication date: November 15, 2018Applicant: DENSO CORPORATIONInventors: Kengo MOCHIKI, Mitsunori KIMURA, Hiroshi SHIMIZU, Yasuyuki OHKOUCHI, Yuu YAMAHIRA, Tetsuya MATSUOKA, Kazuma FUKUSHIMA
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Patent number: 10116213Abstract: A semiconductor module includes an IGBT and a MOSFET. The IGBT is made of a silicon semiconductor. The MOSFET is made of a wide-bandgap semiconductor having a wider bandgap than the silicon semiconductor. The IGBT and the MOSFET are connected in parallel to each other to form a semiconductor element pair. The IGBT has a greater surface area than the MOSFET. The semiconductor module is configured to operate in a region that includes a low-current region and a high-current region. Electric current flowing through the semiconductor element pair is higher in the high-current region than in the low-current region. In the low-current region, the on-resistance of the MOSFET is lower than the on-resistance of the IGBT. In contrast, in the high-current region, the on-resistance of the IGBT is lower than the on-resistance of the MOSFET.Type: GrantFiled: April 19, 2017Date of Patent: October 30, 2018Assignee: DENSO CORPORATIONInventors: Hiroshi Shimizu, Mitsunori Kimura, Kengo Mochiki, Yuu Yamahira, Tetsuya Matsuoka, Kazuma Fukushima, Yasuyuki Ohkouchi
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Patent number: 10103723Abstract: In a driving apparatus for switches connected in parallel to each other, drivers respectively turn on or off the switches. A temperature obtainer obtains a value of a temperature parameter correlating with a temperature of at least one of the first and second switches. A selector selects at least one of the switches as at least one drive target switch. A driver causes at least one of the drivers to turn on the at least one drive target switch during an on duration and thereafter turn off the at least one drive target switch in each target switching cycle. The selector adjusts the number of the selected at least one drive target switch based on the value of the temperature parameter.Type: GrantFiled: November 16, 2017Date of Patent: October 16, 2018Assignee: DENSO CORPORATIONInventors: Hiroshi Shimizu, Kengo Mochiki, Yuu Yamahira, Tetsuya Matsuoka, Kazuma Fukushima, Mitsunori Kimura, Yasuyuki Ohkouchi
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Patent number: 10090761Abstract: A power conversion apparatus includes a first semiconductor element pair that includes a MOSFET made of wide bandgap semiconductor material and a wide bandgap diode made of wide bandgap semiconductor material which is reverse parallel-connected to the MOSFET, a second semiconductor element pair that includes an IGBT made of silicon semiconductor material and a silicon diode made of silicon semiconductor material which is reverse parallel-connected to the IGBT, and a control circuit section for controlling switching operation of the MOSFET and the IGBT. The first and second semiconductor element pairs are connected in series to each other.Type: GrantFiled: April 18, 2017Date of Patent: October 2, 2018Assignee: DENSO CORPORATIONInventors: Hiroshi Shimizu, Mitsunori Kimura, Kengo Mochiki, Yuu Yamahira, Tetsuya Matsuoka, Kazuma Fukushima, Yasuyuki Ohkouchi
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Publication number: 20180269799Abstract: A power conversion apparatus is provided in which an upper arm semiconductor device, a lower arm semiconductor device and a capacitor. At least either upper arm semiconductor device or lower arm semiconductor device constitutes a parallel-connected body. In an opposite arm against the parallel-connected body, a permissible element is provided. In the switching elements that constitute the parallel-connected body, a last off element and a non-last off circuit are identified. Inductance of a last off closed circuit where current flows through the last off element, reflux element in the opposite arm and the capacitor is smaller than inductance of a non-last off closed circuit where current flows through the last off element, reflux element in the opposite arm and the capacitor.Type: ApplicationFiled: March 16, 2018Publication date: September 20, 2018Applicant: DENSO CORPORATIONInventors: Mitsunori KIMURA, Kengo MOCHIKI
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Patent number: 10050512Abstract: A power conversion apparatus includes a semiconductor module including a semiconductor device and a control circuit unit controlling the semiconductor module. The semiconductor module has main and subsidiary semiconductor devices connected in parallel. The control circuit unit performs control such that the subsidiary semiconductor device is turned on after the main semiconductor device is turned on, and the main semiconductor device is turned off after the subsidiary semiconductor device is turned off. The control circuit unit performs control such that, one of the turn-on and turn-off switching timings has a switching speed faster than that of the other of the switching timings. The semiconductor module is configured such that, at a high-speed switching timing, an induction current directed to turn off the subsidiary semiconductor device is generated in a control terminal of the subsidiary semiconductor device depending on temporal change of a main current flowing to the main semiconductor device.Type: GrantFiled: April 19, 2017Date of Patent: August 14, 2018Assignee: DENSO CORPORATIONInventors: Kengo Mochiki, Mitsunori Kimura, Hiroshi Shimizu, Yasuyuki Ohkouchi, Yuu Yamahira, Tetsuya Matsuoka, Kazuma Fukushima
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Publication number: 20180145672Abstract: In a driving apparatus for switches connected in parallel to each other, drivers respectively turn on or off the switches. A temperature obtainer obtains a value of a temperature parameter correlating with a temperature of at least one of the first and second switches. A selector selects at least one of the switches as at least one drive target switch. A driver causes at least one of the drivers to turn on the at least one drive target switch during an on duration and thereafter turn off the at least one drive target switch in each target switching cycle. The selector adjusts the number of the selected at least one drive target switch based on the value of the temperature parameter.Type: ApplicationFiled: November 16, 2017Publication date: May 24, 2018Applicant: DENSO CORPORATIONInventors: Hiroshi SHIMIZU, Kengo MOCHIKI, Yuu YAMAHIRA, Tetsuya MATSUOKA, Kazuma FUKUSHIMA, Mitsunori KIMURA, Yasuyuki OHKOUCHI
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Patent number: 9881852Abstract: A semiconductor module of an electric power converter includes an IGBT and a MOSFET which are connected in parallel to each other and provided on the same lead frame, either one of the IGBT and the MOSFET is a first switching element and the remaining one is a second switching element, and the conduction path of the second switching element is disposed at a position that is separated from a conduction path of the first switching element in the same lead frame.Type: GrantFiled: April 19, 2017Date of Patent: January 30, 2018Assignee: DENSO CORPORATIONInventors: Mitsunori Kimura, Hiroshi Shimizu, Kengo Mochiki, Yasuyuki Ohkouchi, Yuu Yamahira, Tetsuya Matsuoka, Kazuma Fukushima
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Patent number: 9843261Abstract: At least one monitor circuit monitors a temperature of at least one monitored element of switching elements of a power conversion circuit. At least one arrival determination circuit determines that a temperature of at least one non-monitored element of the switching elements has increased and reached a passing temperature. Based on the temperature of the monitored element and arrival determination signals, a temperature estimating unit obtains a temperature difference by subtracting a current temperature of the monitored and non-monitored element at the arrival determination time from an output limitation temperature set for each of the monitored and non-monitored element, and estimates a limitation subject temperature of the monitored or non-monitored element having a smallest temperature difference among the temperature differences.Type: GrantFiled: March 14, 2017Date of Patent: December 12, 2017Assignee: DENSO CORPORATIONInventors: Mitsunori Kimura, Daisuke Suekawa
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Publication number: 20170301662Abstract: A power conversion apparatus performs power conversion. The power conversion apparatus includes a semiconductor module and a cooler. The semiconductor module includes an insulated-gate bipolar transistor, a metal-oxide-semiconductor field-effect transistor, and a lead frame. The insulated-gate bipolar transistor and the metal-oxide-semiconductor field-effect transistor are connected in parallel to each other and provided on the same lead frame. The cooler has a coolant flow passage. The coolant flow passage extends such that the coolant flow passage and the lead frame of the semiconductor module are opposed to each other. The semiconductor module is configured such that the metal-oxide-semiconductor field-effect transistor is not disposed further downstream than the insulated-gate bipolar transistor in a flow direction of a coolant in the coolant flow passage of the cooler.Type: ApplicationFiled: April 17, 2017Publication date: October 19, 2017Applicant: DENSO CORPORATIONInventors: Mitsunori KIMURA, Hiroshi SHIMIZU, Kengo MOCHIKI, Yasuyuki OHKOUCHI, Yuu YAMAHIRA, Tetsuya MATSUOKA, Kazuma FUKUSHIMA