Abstract: A plasma processing apparatus includes: a plasma processing chamber; a substrate support disposed in the plasma processing chamber and including a lower electrode; a source RF generator coupled to the plasma processing chamber and configured to generate a source RF signal including high states and low states in alternate manner; and a bias DC generator coupled to the lower electrode and configured to generate a bias DC signal including ON states and OFF states in alternate manner. Each ON state includes a plurality of cycles, each cycle including a first sequence of first pulses and a second sequence of second pulses, each first pulse having a first voltage level, and each second pulse having a second voltage level different from the first voltage level.

Abstract: An optical disk device is provided in which stable operation is realized even when an offset amount of a signal to be used for servo control changes due to environmental variations. The optical disk device generates a signal for servo control based on signals corresponding to a reflected light of a laser light irradiated to an optical disk, and detects an offset superimposed on a signal for the servo control. The optical disk device compensates the amount of the adjusted offset which has been set up so as to reduce the offset amount in initial setting for light detection corresponding to an optical disk loaded, according to the amount of change of the offset amount detected, adjusts the signal to be used for the servo control based on the amount of the offset control after the compensation, and performs the servo control based on the adjusted signal.

Abstract: It is desired that the overshooting and undershooting of optical pulse waveforms of optical pickups included in optical disk devices be reduced to improve the quality of recording. Among pulses to be recorded, the trailing edge of each last pulse and the leading edge of the subsequent erase top pulse are made to almost coincide with each other. Ratio a/b, where a is the difference between erase top pulse power level Pet and erasing power level Pe and b is the difference between recording power level Pw and the erasing power level Pe, is adjusted to realize an optical pulse waveform with reduced overshooting and undershooting for each of different recording media. Erase top pulse duration Tert is switched according to different recording speeds for different recording media.

Abstract: It is desired that the overshooting and undershooting of optical pulse waveforms of optical pickups included in optical disk devices be reduced to improve the quality of recording. Among pulses to be recorded, the trailing edge of each last pulse and the leading edge of the subsequent erase top pulse are made to almost coincide with each other. Ratio a/b, where a is the difference between erase top pulse power level Pet and erasing power level Pe and b is the difference between recording power level Pw and the erasing power level Pe, is adjusted to realize an optical pulse waveform with reduced overshooting and undershooting for each of different recording media. Erase top pulse duration Tert is switched according to different recording speeds for different recording media.

Abstract: This invention provides an optical disc apparatus constructed to discriminate a disc ID of an optical disc on which information is to be recorded, then derive, from a strategy pre-registered in the optical disc apparatus, test-recording repetition count information that matches the discriminated disc ID, and after using the derived test-recording repetition count information to assign the number of test-recordings to be conducted upon one specific address within a test-recording area of the optical disc, implement the assigned number of test-recordings and calculate an optimum recording power level for information recording, based upon a read signal generated after the final test-recording. The above construction improves recording power accuracy of information recording on rewritable optical discs.

Abstract: An objective of the present invention is to enhance reliability of recorded data by preventing deterioration of OPC (Optimum Power Calibration) accuracy due to an influence of inter-layer interference in an optical disk device capable of writing in a multilayer optical disk. Aiming at the objective, a relationship between asymmetry and a signal modulation depth, which are measured by use of a standard driver is referred, and thereby an offset caused by a device, a disk, a writing state of another layer and the like is compensated. Thus, OPC is executed.

Abstract: In an optical disk apparatus and a method for determining the recording power for the same, for determining the optimum value of a laser power when recording data onto a high density optical disk, a test signal is recorded with changing the recording power Pw while fixing an erasing power Pe. Reproduction is made on the signal recorded so as to obtain a “?” value indicative of asymmetry of the reproduction signal to each the recording power. In this instance, the “?” value, or the optimal recording power Pwo is determined, with utilizing an area or region, being called APC region, which is provided in a part of the recording regions, which are divided into a large number thereof, each being made of a predetermined information recording unit (RUB), being unique to that disk, and further equalization thereof. Herein, the erasing power Pe to be fixed is determined from a result of measurement on a modulation factor, “M” value while recoding another test signal.

Abstract: An objective of the present invention is to enhance reliability of recorded data by preventing deterioration of OPC (Optimum Power Calibration) accuracy due to an influence of inter-layer interference in an optical disk device capable of writing in a multilayer optical disk. Aiming at the objective, a relationship between asymmetry and a signal modulation depth, which are measured by use of a standard driver is referred, and thereby an offset caused by a device, a disk, a writing state of another layer and the like is compensated. Thus, OPC is executed.

Abstract: According to the present invention, an optimum value of a laser power for recording data on a high-density optical disk can be set with high accuracy. A test signal whose erase power Pe is fixed and recording power Pw is varied is recorded on the optical disk. The recorded signal is reproduced and a ? value representing asymmetry of the reproduced signal is obtained for each recording power. An optimum recording power Pwo is set from a recording power with which the obtained ? value becomes a target ? value. Hereby, the fixed erase power Pe is determined from measurement results of a value of a modulation factor M of another test signal recorded. Alternatively, the fixed erase power Pe follows strategy information defined in advance for the optical disk. Or Pe?0 is used regardless of the optical disk.

Abstract: A surveillance camera apparatus includes a first storage unit for storing a size of pixels configuring a image-sensor, a computation unit for performing a computation using first information, second information, third information, and fourth information to calculate angle information on a plurality of vertex-points, the information stored in the first storage unit being defined as the first information, a focal length of an optical lens being defined as the second information, angle information on an optical axis that passes through a rotation center of the surveillance camera apparatus as the third information, and pixel information corresponding to a plurality of vertex-points that form a region to be masked whose image has been picked up by the image-sensor being defined as the fourth information, and a second storage unit for storing the computation result by the computation unit.

Abstract: A highly reliable member for a semiconductor device, in which a high melting point metallizing layer, which consists mainly of a high melting point metal such as W and/or Mo, and an intervening metal layer, which has a melting point of not greater than 1,000° C. and consists mainly of at least one selected from among Ni, Cu and Fe, are provided on an AlN substrate material in this order on the AlN substrate material, and a conductor layer consisting mainly of copper is directly bonded to the intervening metal layer without intervention of a solder material layer. A semiconductor element or the like is mounted on the member for a semiconductor device, thereby fabricating a semiconductor device. The high melting point metallizing layer is formed on an aluminum nitride substrate by post-fire or co-fire metallization.

Abstract: A surveillance camera apparatus includes a first storage unit for storing a size of pixels configuring a image-sensor, a computation unit for performing a computation using first information, second information, third information, and fourth information to calculate angle information on a plurality of vertex-points, the information stored in the first storage unit being defined as the first information, a focal length of an optical lens being defined as the second information, angle information on an optical axis that passes through a rotation center of the surveillance camera apparatus as the third information, and pixel information corresponding to a plurality of vertex-points that form a region to be masked whose image has been picked up by the image-sensor being defined as the fourth information, and a second storage unit for storing the computation result by the computation unit.

Abstract: A highly reliable member for a semiconductor device, in which a high melting point metallizing layer, which consists mainly of a high melting point metal such as W and/or Mo, and an intervening metal layer, which has a melting point of not greater than 1,000° C. and consists mainly of at least one selected from among Ni, Cu and Fe, are provided on an AlN substrate material in this order on the AlN substrate material, and a conductor layer consisting mainly of copper is directly bonded to the intervening metal layer without intervention of a solder material layer. A semiconductor element or the like is mounted on the member for a semiconductor device, thereby fabricating a semiconductor device. The high melting point metallizing layer is formed on an aluminum nitride substrate by post-fire or co-fire matallization.

Abstract: Autofocus control for a subject in various luminance areas when a plurality of screens obtained by image picking-up the subject on a plurality of exposure conditions are synthesized to generate a wide dynamic range image. A focal voltage selector is provided for selectively outputting one, as a focal voltage to be referred to by an autofocus controller, out of focal voltages detected from a plurality of images different in exposure condition. Thus, autofocus control can be applied to various images of the subject picked up in appropriate signal levels on different exposure conditions. Further, a circuit for normalizing the focal voltages is provided. Thus, the influence of variation in exposure condition on the focal voltages is eliminated so that autofocus control can be carried out independently of exposure conditions.

Abstract: A highly reliable member for a semiconductor device, in which a high melting point metallizing layer, which consists mainly of a high melting point metal such as W and/or Mo, and an intervening metal layer, which has a melting point of not greater than 1,000.degree. C. and consists mainly of at least one selected from among Ni, Cu and Fe, are provided on an AlN substrate material in this order on the AlN substrate material, and a conductor layer consisting mainly of copper is directly bonded to the intervening metal layer without intervention of a solder material layer. A semiconductor element or the like is mounted on the member for a semiconductor device, thereby fabricating a semiconductor device. The high melting point metallizing layer is formed on an aluminum nitride substrate by post-fire or co-fire matallization.

Abstract: A plate type member of a Cu--W and/or Mo alloy can be bonded to a ceramic member or the like to form a semiconductor device package without problems, because the degree of warping of the plate type member during a heating step in its fabrication is suppressed. In the plate type member consisting of a Cu--W and/or Mo alloy, including a small amount of alkaline earth metal impurity the difference between alkaline earth metal contents in upper and lower halves of the member along the thickness direction is not more than 10 ppm, or delete "an alkaline earth" preferably not more than 5 ppm relative to the content of W and/or Mo. This plate type member is manufactured by reducing the alkaline earth metal content in W and/or Mo raw material powder, or standing a skeleton vertically upright on a refractory plate for carryiing out Cu infiltration, and performing homogeneous heating and cooling replace during the manufacturing thereby preventing maldistribution of the alkaline earth metal.

Abstract: This invention relates to a coated cutting tool suitable for high speed cutting working and a process for the production of the same. The feature of the present invention consists in a coated cutting tool comprising a coating layer consisting of an inner layer and outer layer on a surface of a substrate consisting of a cemented carbide such as tungsten carbide-based cemented carbide, etc., the inner layer being composed of a mono-layer of titanium carbonitride in contact with the substrate, a double layer of titanium nitride of 0.1 to 2 .mu.m in thickness, in contact with the substrate, and titanium carbonitride directly above it or a multi-layer provided thereon consisting of titanium carbide, etc., in which the chlorine content in the inner layer is at most 0.

Abstract: A coated cemented carbide member includes a cemented carbide base material containing a binder metal of at least one iron family metal and a hard phase, and a coating layer provided on the surface of the cemented carbide base material. The hard phase contains at least one metal component selected from carbides, nitrides, carbo-nitrides and carbonic nitrides of Zr and/or Hf and WC. A layer consisting of only WC and an, iron family metal or a binder phase enriched layer or a low hardness layer is provided on an outermost surface of each insert edge portion of the cemented carbide base material. The coating layer is a single or multiple layer consisting of at least one metal component selected from carbides, nitrides, carbo-nitrides, oxides and borides of metals belonging to the groups IVB, VB and VIB of the periodic table. Due to this structure, it is possible to improve chipping resistance with no deterioration of wear resistance in the coated cemented carbide member to be used, for example, as a cutting tool.

Abstract: Tungsten powder which is a material of high radiation absorptivity is dispersed into unvulcanized fluoro rubber in advance so that the mixture is vulcanized and molded. As the powder of material of high radiation absorptivity, powder having an F.s.s.s. particle size not larger than 50 .mu.m is used. Further, in the case where a mixture of powder having an F.s.s.s. particle size in a range of from 5 .mu.m to 50 .mu.m, and powder having an F.s.s.s. particle size in a range of from 0.5 .mu.m, to 5 .mu.m, is used as the powder of material of high radiation absorptivity, the powder of material of high radiation absorptivity has good tensile strength, good extensibility and more excellent radiation shielding ability, when the weight of the powder having a particle size in a range of from 4 .mu.m to 100 .mu.m is in a range of from 60% by weight to 95% by weight, and the weight of the powder having a particle size smaller than 4 .mu.m is in a range of from 5% by weight to 40% by weight.

Abstract: A coated cemented carbide member includes a cemented carbide base material containing a binder metal of at least one iron family metal and a hard phase, and a coating layer provided on the surface of the cemented carbide base material. The hard phase contains at least one metal component selected from carbides, nitrides, carbo-nitrides and carbonic nitrides of Zr and/or Hf and WC. A layer consisting of only WC and an iron family metal or a binder phase enriched layer or a low hardness layer is provided on an outermost surface of each insert edge portion of the cemented carbide base material. The coating layer is a single or multiple layer consisting of at least one metal component selected from carbides, nitrides, carbo-nitrides, oxides and borides of metals belonging to the groups IVB, VB and VIB of the periodic table. Due to this structure, it is possible to improve chipping resistance with no deterioration of wear resistance in the coated cemented carbide member to be used, for example, as a cutting tool.