Abstract: A semiconductor memory device includes: wiring layers; a semiconductor column opposed to the wiring layers; a gate insulating film disposed between the wiring layers and the semiconductor column; and an insulating member in contact with the gate insulating film. A first wiring layer includes: a first wiring disposed on a gate insulating film side with respect to the insulating member; a second wiring disposed on a side opposite the first wiring; and a metal oxide film covering surfaces on one side and the other side in the stacking direction and not covering a contact surface with the insulating member of the second wiring. The second wiring includes a first conductive layer and a second conductive layer spaced apart in the stacking direction, and a first conductive portion connected to the first conductive layer and the second conductive layer. The first conductive portion includes the contact surface with the insulating member.

Abstract: Semiconductor memory device includes: a first and second member each extending in a first direction in a boundary part between a first and second block region and arranged in the first direction; a support pillar arranged between the first and second member at the boundary part; conductive layers separated from one another and arranged in a third direction and split by the first and second member, and the support pillar into a first and second portion; and a memory pillar penetrating through the conductive layers. The support pillar includes a lower and upper pillar. A side face of the lower pillar and an extension of a side face of the upper pillar are displaced from each other in a plane based on a second and the third direction.