Patents by Inventor Mitsunori Ohata
Mitsunori Ohata has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20210358716Abstract: A plasma processing apparatus includes: a plasma processing chamber; a substrate support disposed in the plasma processing chamber and including a lower electrode; a source RF generator coupled to the plasma processing chamber and configured to generate a source RF signal including high states and low states in alternate manner; and a bias DC generator coupled to the lower electrode and configured to generate a bias DC signal including ON states and OFF states in alternate manner. Each ON state includes a plurality of cycles, each cycle including a first sequence of first pulses and a second sequence of second pulses, each first pulse having a first voltage level, and each second pulse having a second voltage level different from the first voltage level.Type: ApplicationFiled: May 7, 2021Publication date: November 18, 2021Applicant: TOKYO ELECTRON LIMITEDInventors: Bongseong KIM, Ken KOBAYASHI, Mitsunori OHATA, Yoon Ho BAE
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Publication number: 20210358717Abstract: A plasma processing apparatus includes a plasma processing chamber, a substrate support, a source RF generator, and a bias RF generator. The substrate support is disposed within the plasma processing chamber. The source RF generator is configured to generate a source RF signal. The source RF signal includes source cycles, and each of the source cycles includes a source ON state and a source OFF state. The source ON state has at least two source power levels. The bias RF generator is coupled to the substrate support and configured to generate a bias RF signal. The bias RF signal includes bias cycles corresponding to the source cycles, respectively. Each of the bias cycles includes a bias ON state and a bias OFF state. The bias ON state has at least two bias power levels.Type: ApplicationFiled: May 7, 2021Publication date: November 18, 2021Applicant: TOKYO ELECTRON LIMITEDInventors: Bongseong KIM, Masahiro INOUE, Mitsunori OHATA, Ken KOBAYASHI
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Patent number: 11158516Abstract: A plasma processing method includes providing a first source power (SP) pulse to an SP coupling element for a first SP pulse duration to generate plasma in a processing chamber, providing a high frequency bias power (HBP) pulse to a substrate holder disposed in the processing chamber for a HBP pulse duration overlapping the first SP pulse duration, and providing a first low frequency bias power (LBP) pulse to the substrate holder for a first LBP pulse duration not overlapping the first SP pulse duration. The HBP pulse includes an HBP pulse frequency that is greater than 800 kHz. The first LBP pulse includes an LBP pulse frequency that is less than about 800 kHz.Type: GrantFiled: February 7, 2020Date of Patent: October 26, 2021Assignee: TOKYO ELECTRON LIMITEDInventors: Alok Ranjan, Peter Ventzek, Mitsunori Ohata
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Publication number: 20210249225Abstract: A plasma processing method includes providing a first source power (SP) pulse to an SP coupling element for a first SP pulse duration to generate plasma in a processing chamber, providing a high frequency bias power (HBP) pulse to a substrate holder disposed in the processing chamber for a HBP pulse duration overlapping the first SP pulse duration, and providing a first low frequency bias power (LBP) pulse to the substrate holder for a first LBP pulse duration not overlapping the first SP pulse duration. The HBP pulse includes an HBP pulse frequency that is greater than 800 kHz. The first LBP pulse includes an LBP pulse frequency that is less than about 800 kHz.Type: ApplicationFiled: February 7, 2020Publication date: August 12, 2021Inventors: Alok Ranjan, Peter Ventzek, Mitsunori Ohata
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Publication number: 20210193439Abstract: A plasma processing apparatus includes a chamber, an antenna assembly, a primary coil, a radio frequency (RF) power supply and a gas shower. The chamber includes a sidewall and a ceiling plate having a central opening. The the sidewall and the ceiling plate define a plasma processing space. The antenna assembly is disposed above the ceiling plate. The antenna assembly includes a central region, a first peripheral region surrounding the central region, and a second peripheral region surrounding the first peripheral region. The central region and the first peripheral region vertically overlap the central opening. The primary coil is disposed in the second peripheral region. The RF power supply is configured to supply an RF signal to the primary coil. The gas shower is disposed in the central opening and has a bottom portion exposed to the plasma processing space, the bottom portion having bottom gas injection holes.Type: ApplicationFiled: December 22, 2020Publication date: June 24, 2021Applicant: TOKYO ELECTRON LIMITEDInventors: Mayo UDA, Mitsunori OHATA
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Publication number: 20210151296Abstract: A plasma processing apparatus includes a plasma processing chamber, a coil having an uncoiled length L disposed adjacent to the plasma processing chamber, and a plurality of retractable conductors each configured to make electrical contact with the coil in an extended position. A first tap position is located substantially at a distance L/2 measured from a first end along the coil, a second tap position neighboring the first tap position and located substantially at the distance L/2 measured from the first end along the coil, and a third tap position located substantially at the first end of the coil. A controller is configured to operate the plasma processing apparatus in a first operating mode to sustain an inductively coupled plasma and in a second operating mode to sustain a capacitively coupled plasma using subsets of the retractable conductors in the extended position.Type: ApplicationFiled: January 29, 2021Publication date: May 20, 2021Inventors: Peter Ventzek, Alok Ranjan, Mitsunori Ohata, Michael Hummel
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Publication number: 20210050183Abstract: A method of plasma processing includes performing a reactive species control phase, performing an ion/radical control phase, and performing a by-product control phase. The reactive species control phase includes pulsing source power to a processing chamber to generate ions and radicals in a plasma. The ion/radical control phase is performed after the reactive species control phase. The ion/radical control phase includes reducing the source power to the processing chamber and pulsing bias power to a substrate in the processing chamber. The by-product control phase is performed after the ion/radical control phase. The by-product control phase includes reducing the source power to the processing chamber relative to the reactive species control phase and reducing the bias power to the substrate relative to the ion/radical control phase.Type: ApplicationFiled: August 14, 2019Publication date: February 18, 2021Inventors: Peter Ventzek, Alok Ranjan, Mitsunori Ohata
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Patent number: 10910196Abstract: In one embodiment, a plasma processing system includes a plasma processing chamber, a substrate holder disposed in the plasma processing chamber, a coil disposed over the plasma processing chamber, and a plurality of taps configured to contact the coil at an associated contact region. The plasma processing system is configured to sustain a plasma by selecting a subset of taps from the plurality of taps to apply a power source and a reference potential.Type: GrantFiled: July 24, 2019Date of Patent: February 2, 2021Assignee: TOKYO ELECTRON LIMITEDInventors: Peter Ventzek, Alok Ranjan, Mitsunori Ohata, Michael Hummel
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Publication number: 20210027991Abstract: In one embodiment, a plasma processing system includes a plasma processing chamber, a substrate holder disposed in the plasma processing chamber, a coil disposed over the plasma processing chamber, and a plurality of taps configured to contact the coil at an associated contact region. The plasma processing system is configured to sustain a plasma by selecting a subset of taps from the plurality of taps to apply a power source and a reference potential.Type: ApplicationFiled: July 24, 2019Publication date: January 28, 2021Inventors: Peter Ventzek, Alok Ranjan, Mitsunori Ohata, Michael Hummel
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Publication number: 20210020405Abstract: In one embodiment, a plasma processing apparatus includes a plasma processing chamber that includes a first portion and a second portion. The first portion includes sidewalls and a top cover having a through hole. The second portion is coupled to the first portion via the through hole. A substrate holder is disposed in the first portion of the plasma processing chamber. A first coil is disposed over the first portion and a second coil is disposed over the first portion and around the second portion.Type: ApplicationFiled: July 18, 2019Publication date: January 21, 2021Inventors: Peter Ventzek, Mitsunori Ohata, Alok Ranjan
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Publication number: 20210013015Abstract: An apparatus includes a plasma processing container; a workpiece placement table disposed in the plasma processing container; a dielectric member having a facing surface that faces the workpiece placement table; an antenna provided on a surface of the dielectric member opposite to the facing surface and configured to introduce an induced electric field for plasma excitation into the plasma processing container via the dielectric member; an electromagnet group disposed along an outer circumference of the plasma processing container and configured to form a magnetic field in the plasma processing container; and a controller configured to control magnitudes of electric currents flowing through respective electromagnets of the electromagnet group differently from each other, to generate a magnetic gradient along a circumferential direction in the magnetic field that exists only in an outer circumferential space in the plasma processing container.Type: ApplicationFiled: September 24, 2020Publication date: January 14, 2021Applicant: TOKYO ELECTRON LIMITEDInventors: Kazuya NAGASEKI, Shinji HIMORI, Mitsunori OHATA
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Patent number: 10825663Abstract: Disclosed is a plasma processing apparatus including: a processing container; a placing table provided in the processing container and configured to place a workpiece thereon; a dielectric member having a facing surface that faces the placing table; a planar antenna provided on a surface of the dielectric member opposite to the facing surface and configured to introduce an induced electric field for plasma excitation into the processing container via the dielectric member; and an electromagnet group disposed along an outer circumference of the processing container and configured to form a magnetic field for moving ions in plasma based on the induced electric field along the facing surface of the dielectric member in the processing container.Type: GrantFiled: December 13, 2017Date of Patent: November 3, 2020Assignee: TOKYO ELECTRON LIMITEDInventors: Kazuya Nagaseki, Shinji Himori, Mitsunori Ohata
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Patent number: 10685816Abstract: A method MT includes etching a wafer W using plasma generated in a processing container. The etching includes a process of inclining and rotating a holding structure holding the wafer W during execution of the etching and the process successively creating a plurality of inclined rotation states RT(?, t) with respect to the holding structure. In the inclined rotation states, the wafer W is rotated about a central axis of the wafer W over a predetermined process time while maintaining a state where the central axis is inclined with respect to a reference axis of the processing container which is in the same plane as the central axis. A combination of a value ? of an inclination angle AN of the central axis with respect to the reference axis and the process time t differs for each of the plurality of inclined rotation states.Type: GrantFiled: November 11, 2016Date of Patent: June 16, 2020Assignee: TOKYO ELECTRON LIMITEDInventors: Yoshihiro Umezawa, Jun Sato, Kiyoshi Maeda, Mitsunori Ohata, Kazuya Matsumoto
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Publication number: 20200058469Abstract: A plasma processing system includes a vacuum chamber, a first coupling electrode, a substrate holder disposed in the vacuum chamber, a second coupling electrode, and a controller. The substrate holder is configured to support a substrate. The first coupling electrode is configured to provide power for generation of a plasma in the vacuum chamber. The first coupling electrode is further configured to couple source power pulses to the plasma. The second coupling electrode is configured to couple bias power pulses to the substrate. The controller is configured to control a first offset duration between the source power pulses the bias power pulses.Type: ApplicationFiled: December 13, 2018Publication date: February 20, 2020Inventors: Alok Ranjan, Peter Ventzek, Mitsunori Ohata
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Patent number: 10541142Abstract: A plasma processing apparatus includes a support structure configured to support a workpiece and a first drive device configured to rotate the support structure about a first axis extending in a direction orthogonal to a vertical direction. The support structure includes a holding unit including an electrostatic chuck and a container provided under the holding unit. The container includes a tubular container body, and a bottom cover configured to close a bottom side opening of the container body and to be detachable from the container body. A maintenance method includes: rotating a support structure about a first axis such that the bottom cover is positioned above an electrostatic chuck, removing the bottom cover from the container body, and maintaining a component provided in the container body.Type: GrantFiled: April 10, 2017Date of Patent: January 21, 2020Assignee: TOKYO ELECTRON LIMITEDInventors: Kazuya Matsumoto, Yuki Hosaka, Mitsunori Ohata, Takashi Yamamoto
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Publication number: 20190131158Abstract: A plasma processing apparatus includes a chamber body that provides a chamber, a support structure which supports a workpiece inside the chamber body, and a first drive device which rotates the support structure inside the chamber body about a first axis that extends in a direction orthogonal to the vertical direction. The support structure includes a holding unit including an electrostatic chuck which holds the workpiece and which is rotatable around a second axis orthogonal to the first axis, a container provided below the holding unit, and a second drive device which rotates the holding unit around the second axis. The container has a cylindrical container body and a bottom cover configured to close a bottom side opening in the container body. The bottom cover is detachable from the container body.Type: ApplicationFiled: April 10, 2017Publication date: May 2, 2019Applicant: TOKYO ELECTRON LIMITEDInventors: Kazuya MATSUMOTO, Yuki HOSAKA, Mitsunori OHATA, Takashi YAMAMOTO
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Publication number: 20190131137Abstract: A plasma processing apparatus includes a support structure configured to support a workpiece and a first drive device configured to rotate the support structure about a first axis extending in a direction orthogonal to a vertical direction. The support structure includes a holding unit including an electrostatic chuck and a container provided under the holding unit. The container includes a tubular container body, and a bottom cover configured to close a bottom side opening of the container body and to be detachable from the container body. A maintenance method includes: rotating a support structure about a first axis such that the bottom cover is positioned above an electrostatic chuck, removing the bottom cover from the container body, and maintaining a component provided in the container body.Type: ApplicationFiled: April 10, 2017Publication date: May 2, 2019Applicant: Tokyo Electron LimitedInventors: Kazuya MATSUMOTO, Yuki HOSAKA, Mitsunori OHATA, Takashi YAMAMOTO
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Patent number: 10217933Abstract: A method according to an exemplary embodiment includes: (a) etching an upper magnetic layer by plasma generated within a processing container, the etching of the upper magnetic layer being terminated on a surface of an insulating layer; (b) removing a deposit formed on a surface of the mask and the upper magnetic layer by etching the upper magnetic layer, by the plasma generated within the processing container; and (c) etching the insulating layer by the plasma generated within the processing container. In the step of removing the deposit, the support structure that holds a processing target is inclined and rotated, and a pulse-modulated DC voltage as a bias voltage for ion attraction is applied to the support structure.Type: GrantFiled: October 8, 2015Date of Patent: February 26, 2019Assignee: TOKYO ELECTRON LIMITEDInventors: Eiichi Nishimura, Mitsunori Ohata
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Patent number: 10204766Abstract: Disclosed is an ion beam irradiation apparatus including: a plurality of plate-like grid electrodes arranged in a beam irradiation direction so as to overlap each other and each having a plurality of apertures; a power supply unit that applies a voltage to each of the grid electrodes; and a controller that controls the voltage applied to each of the grid electrodes by the power supply unit. The plurality of grid electrodes include first to fourth grid electrodes. Central axes of apertures of the first grid electrode and apertures of the second grid electrode are coaxial along the beam irradiation direction, and a central axis of apertures of the third grid electrode is offset in a direction orthogonal to the beam irradiation direction with respect to the central axes of the apertures of the first grid electrode and the second grid electrode.Type: GrantFiled: October 17, 2017Date of Patent: February 12, 2019Assignee: TOKYO ELECTRON LIMITEDInventors: Yoshihiro Umezawa, Mitsunori Ohata, Shinji Nagamachi, Kenichi Shimono
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Publication number: 20180337025Abstract: A method MT includes etching a wafer W using plasma generated in a processing container. The etching includes a process of inclining and rotating a holding structure holding the wafer W during execution of the etching and the process successively creating a plurality of inclined rotation states RT(?, t) with respect to the holding structure. In the inclined rotation states, the wafer W is rotated about a central axis of the wafer W over a predetermined process time while maintaining a state where the central axis is inclined with respect to a reference axis of the processing container which is in the same plane as the central axis. A combination of a value ? of an inclination angle AN of the central axis with respect to the reference axis and the process time t differs for each of the plurality of inclined rotation states.Type: ApplicationFiled: November 11, 2016Publication date: November 22, 2018Applicant: TOKYO ELECTRON LIMITEDInventors: Yoshihiro UMEZAWA, Jun SATO, Kiyoshi MAEDA, Mitsunori OHATA, Kazuya MATSUMOTO