Patents by Inventor Mitsunori Samata

Mitsunori Samata has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11381204
    Abstract: A power amplifier circuit includes a first amplifier that amplifies a first signal, and a second amplifier arranged subsequent to the first amplifier. The second amplifier amplifies a second signal that is based on an output signal of the first amplifier. The first amplifier performs class inverse-F operation, and the second amplifier performs class F operation.
    Type: Grant
    Filed: November 1, 2019
    Date of Patent: July 5, 2022
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventors: Hisanori Namie, Mitsunori Samata, Satoshi Tanaka
  • Publication number: 20220200551
    Abstract: A power amplification device includes a first member in which a first circuit is formed, a second member in which a second circuit is formed, and a member-member connection conductor that electrically connects the first circuit and the second circuit to each other. The second member is mounted on the first member. The second circuit includes a first amplifier, which amplifies a radio frequency signal to output a first amplified signal. The first circuit includes a control circuit that controls an operation of the second circuit. At least part of a first termination circuit, which is connected to the first amplifier through the member-member connection conductor and which attenuates a harmonic wave component of the first amplified signal, is formed in the first member.
    Type: Application
    Filed: December 13, 2021
    Publication date: June 23, 2022
    Applicant: Murata Manufacturing Co., Ltd.
    Inventors: Mitsunori SAMATA, Satoshi ARAYASHIKI, Koshi HIMEDA, Masayuki AOIKE
  • Publication number: 20220200548
    Abstract: A second member is joined in surface contact with a first surface of a first member including a semiconductor region made from an elemental semiconductor. The second member includes a radio-frequency amplifier circuit made from a compound semiconductor. A conductive protrusion projects from the second member toward a side opposite to the first member. The first member includes a temperature measurement element that detects a temperature.
    Type: Application
    Filed: December 9, 2021
    Publication date: June 23, 2022
    Applicant: Murata Manufacturing Co., Ltd.
    Inventors: Mikiko FUKASAWA, Satoshi GOTO, Shunji YOSHIMI, Yuji TAKEMATSU, Mitsunori SAMATA
  • Publication number: 20220189893
    Abstract: A semiconductor device including a radio-frequency amplifier circuit and a band selection switch is mounted on or in a module substrate. An output matching circuit coupled between the radio-frequency amplifier circuit and the band selection switch is on or in the module substrate. The semiconductor device includes a first member at which the band selection switch having a semiconductor element made of an elemental semiconductor is formed and a second member joined to the first member in surface contact therewith. The radio-frequency amplifier circuit including a semiconductor element made of a compound semiconductor is formed at the second member. Conductive protrusions are raised from first and second members. The semiconductor device is mounted on or in the module substrate with the conductive protrusions interposed therebetween, and in plan view, is in close proximity to the output matching circuit or overlaps a passive element constituting the output matching circuit.
    Type: Application
    Filed: December 9, 2021
    Publication date: June 16, 2022
    Applicant: Murata Manufacturing Co., Ltd.
    Inventors: Shunji YOSHIMI, Mitsunori SAMATA
  • Publication number: 20220190847
    Abstract: A semiconductor device including a radio-frequency amplifier circuit and a band selection switch are mounted on or in a module substrate. An output matching circuit includes at least one passive element disposed on or in the module substrate. The output matching circuit is coupled between the radio-frequency amplifier circuit and the band selection switch. The semiconductor device includes a first member having a semiconductor portion made of an elemental semiconductor and a second member joined to the first member in surface contact with the first member. The radio-frequency amplifier circuit including a semiconductor element made of a compound semiconductor is formed at the second member. The semiconductor device is disposed in close proximity to the output matching circuit in plan view. The output matching circuit is disposed in close proximity to the band selection switch.
    Type: Application
    Filed: December 9, 2021
    Publication date: June 16, 2022
    Applicant: Murata Manufacturing Co., Ltd.
    Inventors: Satoshi GOTO, Shunji YOSHIMI, Mitsunori SAMATA
  • Publication number: 20210203285
    Abstract: A power amplifier circuit includes a first transistor having a first terminal to which a voltage corresponding to a variable power supply voltage is to be supplied and a second terminal to which a radio-frequency signal is to be supplied, the first transistor being configured to amplify the radio-frequency signal, a bias circuit configured to supply a bias current or voltage to the second terminal of the first transistor, and an adjustment circuit configured to adjust the bias current or voltage in accordance with the variable power supply voltage supplied from a power supply terminal.
    Type: Application
    Filed: December 22, 2020
    Publication date: July 1, 2021
    Inventor: Mitsunori SAMATA
  • Publication number: 20210143783
    Abstract: A power amplifier module includes a first transistor that amplifies and outputs a signal, a second transistor that supplies a bias current to a base of the first transistor, and a ballast resistor circuit that is disposed between the base and an emitter of the second transistor and that includes first and second resistive elements and a switching element. The first resistive element is arranged in series on a line connecting the base and the emitter. The first and second resistive elements are series-connected or parallel-connected. When the second resistive element is series-connected to the first transistor, the switching element is parallel-connected to the second resistive element. When the second resistive element is parallel-connected to the first transistor, the switching element is series-connected to the second resistive element. The switching element is switched on/off based on a collector current of the second transistor.
    Type: Application
    Filed: November 10, 2020
    Publication date: May 13, 2021
    Inventors: Mitsunori SAMATA, Atsushi ONO, Masaki TADA
  • Publication number: 20210111743
    Abstract: A radio frequency module includes: a module board that includes a first principal surface and a second principal surface on opposite sides of the module board; a power amplifier; and a first circuit component. The power amplifier includes: a first amplifying circuit element; a second amplifying circuit element; and an output transformer that includes a primary coil and a secondary coil. An end of the primary coil is connected to an output terminal of the first amplifying circuit element. Another end of the primary coil is connected to an output terminal of the second amplifying circuit element. An end of the secondary coil is connected to an output terminal of the power amplifier. The first amplifying circuit element and the second amplifying circuit element are disposed on the first principal surface. The first circuit component is disposed on the second principal surface.
    Type: Application
    Filed: October 9, 2020
    Publication date: April 15, 2021
    Applicant: Murata Manufacturing Co., Ltd.
    Inventors: Shigeru TSUCHIDA, Daerok OH, Takahiro KATAMATA, Satoshi GOTO, Mitsunori SAMATA, Yoshiki YASUTOMO
  • Patent number: 10971466
    Abstract: A high frequency module includes a transmission power amplifier, a bump electrode connected to the transmission power amplifier, and a mounting board on which the transmission power amplifier is mounted, wherein the mounting board includes a via conductor having an elongated shape in the plan view of the mounting board, a board main part placed outside the via conductor, and an insulating part placed inside the via conductor, and the bump electrode and the via conductor are connected while at least partially overlapping each other in the foregoing plan view, and the board main part and the insulating part are each composed of an insulating material of the same kind.
    Type: Grant
    Filed: August 7, 2019
    Date of Patent: April 6, 2021
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventors: Katsunari Nakazawa, Takanori Uejima, Motoji Tsuda, Yuji Takematsu, Dai Nakagawa, Tetsuro Harada, Masahide Takebe, Naoya Matsumoto, Yoshiaki Sukemori, Mitsunori Samata, Yutaka Sasaki, Yuuki Fukuda
  • Patent number: 10964657
    Abstract: A radio-frequency module includes: a transmission power amplifier that includes first and second amplification transistors that are cascade connected to each other; and a mounting substrate that has first and second main surface that face each other, the transmission power amplifier being mounted on the first main surface. The first amplification transistor is arranged in a final stage and has a first emitter terminal. The second amplification transistor is arranged in a stage preceding the first amplification transistor and has a second emitter terminal. The mounting substrate has first to fourth ground electrode layers in order of proximity to the first main surface. The first emitter terminal and the second emitter terminal are not electrically connected to each other via an electrode on the first main surface and are not electrically connected to each other via the first ground electrode layer.
    Type: Grant
    Filed: July 16, 2019
    Date of Patent: March 30, 2021
    Assignee: MURATA MANUFACTURING CO.. LTD.
    Inventors: Katsunari Nakazawa, Takanori Uejima, Motoji Tsuda, Yuji Takematsu, Dai Nakagawa, Tetsuro Harada, Masahide Takebe, Naoya Matsumoto, Yoshiaki Sukemori, Mitsunori Samata, Yutaka Sasaki, Yuki Fukuda
  • Patent number: 10950569
    Abstract: A high frequency module includes a transmission power amplifier, a bump electrode connected to a principal surface of the transmission power amplifier and having an elongated shape in a plan view of the principal surface, and a mounting board on which the transmission power amplifier is mounted, wherein the mounting board includes a via conductor having an elongated shape in the plan view, the length direction of the bump electrode and the length direction of the via conductor are aligned in the plan view, and the bump electrode and the via conductor are connected in an overlapping area where the bump electrode and the via conductor overlap at least partially in the plan view, and the overlapping area is an area elongated in the length direction.
    Type: Grant
    Filed: July 15, 2019
    Date of Patent: March 16, 2021
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventors: Katsunari Nakazawa, Takanori Uejima, Motoji Tsuda, Yuji Takematsu, Dai Nakagawa, Tetsuro Harada, Masahide Takebe, Naoya Matsumoto, Yoshiaki Sukemori, Mitsunori Samata, Yutaka Sasaki, Yuki Fukuda
  • Patent number: 10924072
    Abstract: A power amplification circuit includes an amplification transistor, a variable voltage power supply that supplies a variable voltage to a collector of the amplification transistor, a bias circuit that has a constant current amplification transistor outputting a DC bias current to a base of the amplifier transistor, and a current limiting circuit that limits the DC bias current. The current limiting circuit includes a current limiting transistor, a resistor element connected to a collector of the current limiting transistor and the variable voltage power supply, and a resistor element connected to a base of the current limiting transistor and a base of the constant current amplifying transistor.
    Type: Grant
    Filed: March 8, 2019
    Date of Patent: February 16, 2021
    Assignee: MURATA MANUFACTURING CO., LTD.
    Inventors: Kenji Tahara, Kenichi Shimamoto, Shigeru Tsuchida, Mitsunori Samata, Yoshiaki Sukemori
  • Publication number: 20200389128
    Abstract: A power amplifier circuit includes a transistor having a base to which a radio frequency signal is input and a collector to which a power supply voltage that varies in accordance with an envelope of amplitude of the radio frequency signal is supplied and from which an amplified signal obtained by amplifying the radio frequency signal is output; a first termination circuit provided at a stage subsequent to the transistor and configured to attenuate a harmonic component of the amplified signal; and a second termination circuit provided at the stage subsequent to the transistor and configured to attenuate a harmonic component of the amplified signal. The first termination circuit and the second termination circuit have a property of resonating for a radio frequency signal having a frequency between a frequency of a second harmonic component and a frequency of a third harmonic component.
    Type: Application
    Filed: June 3, 2020
    Publication date: December 10, 2020
    Inventor: Mitsunori SAMATA
  • Publication number: 20200144965
    Abstract: A power amplifier circuit includes a first amplifier that amplifies a first signal, and a second amplifier arranged subsequent to the first amplifier. The second amplifier amplifies a second signal that is based on an output signal of the first amplifier. The first amplifier performs class inverse-F operation, and the second amplifier performs class F operation.
    Type: Application
    Filed: November 1, 2019
    Publication date: May 7, 2020
    Inventors: Hisanori NAMIE, Mitsunori SAMATA, Satoshi TANAKA
  • Publication number: 20200051941
    Abstract: A high frequency module includes a transmission power amplifier, a bump electrode connected to a principal surface of the transmission power amplifier and having an elongated shape in a plan view of the principal surface, and a mounting board on which the transmission power amplifier is mounted, wherein the mounting board includes a via conductor having an elongated shape in the plan view, the length direction of the bump electrode and the length direction of the via conductor are aligned in the plan view, and the bump electrode and the via conductor are connected in an overlapping area where the bump electrode and the via conductor overlap at least partially in the plan view, and the overlapping area is an area elongated in the length direction.
    Type: Application
    Filed: July 15, 2019
    Publication date: February 13, 2020
    Inventors: Katsunari NAKAZAWA, Takanori UEJIMA, Motoji TSUDA, Yuji TAKEMATSU, Dai NAKAGAWA, Tetsuro HARADA, Masahide TAKEBE, Naoya MATSUMOTO, Yoshiaki SUKEMORI, Mitsunori SAMATA, Yutaka SASAKI, Yuki FUKUDA
  • Publication number: 20200051943
    Abstract: A high frequency module includes a transmission power amplifier, a bump electrode connected to the transmission power amplifier, and a mounting board on which the transmission power amplifier is mounted, wherein the mounting board includes a via conductor having an elongated shape in the plan view of the mounting board, a board main part placed outside the via conductor, and an insulating part placed inside the via conductor, and the bump electrode and the via conductor are connected while at least partially overlapping each other in the foregoing plan view, and the board main part and the insulating part are each composed of an insulating material of the same kind.
    Type: Application
    Filed: August 7, 2019
    Publication date: February 13, 2020
    Inventors: Katsunari NAKAZAWA, Takanori UEJIMA, Motoji TSUDA, Yuji TAKEMATSU, Dai NAKAGAWA, Tetsuro HARADA, Masahide TAKEBE, Naoya MATSUMOTO, Yoshiaki SUKEMORI, Mitsunori SAMATA, Yutaka SASAKI, Yuuki FUKUDA
  • Publication number: 20200051942
    Abstract: A radio-frequency module includes: a transmission power amplifier that includes first and second amplification transistors that are cascade connected to each other; and a mounting substrate that has first and second main surface that face each other, the transmission power amplifier being mounted on the first main surface. The first amplification transistor is arranged in a final stage and has a first emitter terminal. The second amplification transistor is arranged in a stage preceding the first amplification transistor and has a second emitter terminal. The mounting substrate has first to fourth ground electrode layers in order of proximity to the first main surface. The first emitter terminal and the second emitter terminal are not electrically connected to each other via an electrode on the first main surface and are not electrically connected to each other via the first ground electrode layer.
    Type: Application
    Filed: July 16, 2019
    Publication date: February 13, 2020
    Inventors: Katsunari NAKAZAWA, Takanori UEJIMA, Motoji TSUDA, Yuji TAKEMATSU, Dai NAKAGAWA, Tetsuro HARADA, Masahide TAKEBE, Naoya MATSUMOTO, Yoshiaki SUKEMORI, Mitsunori SAMATA, Yutaka SASAKI, Yuki FUKUDA
  • Publication number: 20190305736
    Abstract: A power amplification circuit includes an amplification transistor, a variable voltage power supply that supplies a variable voltage to a collector of the amplification transistor, a bias circuit that has a constant current amplification transistor outputting a DC bias current to a base of the amplifier transistor, and a current limiting circuit that limits the DC bias current. The current limiting circuit includes a current limiting transistor, a resistor element connected to a collector of the current limiting transistor and the variable voltage power supply, and a resistor element connected to a base of the current limiting transistor and a base of the constant current amplifying transistor.
    Type: Application
    Filed: March 8, 2019
    Publication date: October 3, 2019
    Inventors: Kenji TAHARA, Kenichi SHIMAMOTO, Shigeru TSUCHIDA, Mitsunori SAMATA, Yoshiaki SUKEMORI
  • Patent number: 8754713
    Abstract: In an ADPLL composed of a digital circuit, a technique improving phase difference detection in a vicinity of a phase difference of 0 (zero) is provided. A feedback loop comprises a PFD comparing phases and frequencies of a reference signal and a feedback signal, a TDC converting an output of the PFD into a digital value, a DLF removing a high frequency noise component from an output of the TDC, a DCO controlled based on an output of the DLF and a DIV frequency-dividing an output the DCO and outputting the feedback signal. An offset value is added at any portion of the feedback loop, a phase of the feedback signal is controlled and a value other than 0 is inputted to the TDC even when the ADPLL is locked.
    Type: Grant
    Filed: November 23, 2010
    Date of Patent: June 17, 2014
    Assignees: Renesas Electronics Corporation, Epoch Microelectronics, Inc.
    Inventors: Toshiya Uozumi, Keisuke Ueda, Mitsunori Samata, Satoru Yamamoto, Russell P Mohn, Aleksander Dec, Ken Suyama
  • Publication number: 20110064150
    Abstract: In an ADPLL composed of a digital circuit, a technique improving phase difference detection in a vicinity of a phase difference of 0 (zero) is provided. A feedback loop comprises a PFD comparing phases and frequencies of a reference signal and a feedback signal, a TDC converting an output of the PFD into a digital value, a DLF removing a high frequency noise component from an output of the TDC, a DCO controlled based on an output of the DLF and a DIV frequency-dividing an output the DCO and outputting the feedback signal. An offset value is added at any portion of the feedback loop, a phase of the feedback signal is controlled and a value other than 0 is inputted to the TDC even when the ADPLL is locked.
    Type: Application
    Filed: November 23, 2010
    Publication date: March 17, 2011
    Applicant: RENESAS ELECTRONICS CORPORATION
    Inventors: Toshiya UOZUMI, Keisuke UEDA, Mitsunori SAMATA, Satoru YAMAMOTO, Russell P. Mohn, Aleksander DEC, Ken SUYAMA