Patents by Inventor Mitsunori Tsuchiya

Mitsunori Tsuchiya has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6756670
    Abstract: An electronic device comprising a substrate having a frame, a metal lead and an electronic parts in a bonding structure, and a molding of an organic resin formed on the substrate, wherein the surface of the organic resin is provided with a hardened water-resistant or carbonaceous film or wherein pores at the surface of the organic resin are filled within an inactive gas such as argon because of a plasma treatment of the resin surface with the inactive gas whereby impurities are prevented from entering into the organic resin through the pores.
    Type: Grant
    Filed: October 30, 2000
    Date of Patent: June 29, 2004
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Mitsunori Tsuchiya, Kazuo Urata, Itaru Koyama, Shinji Imatou, Shigenori Hayashi, Naoki Hirose, Mari Sasaki, Noriya Ishida, Kouhei Wada
  • Patent number: 6285164
    Abstract: An apparatus for detecting an integrated value of current flow. The apparatus includes an integrator having an integration capacitor, to which a current sensor voltage is inputted, for outputting an output voltage corresponding to an integrated value of the current sensor voltage, and a resetting circuit for clearing integration electric charges accumulated in the integration capacitor to reset the integrator when the output voltage has reached an upper threshold value or a lower threshold value. The apparatus also includes a counter for counting the number of resets of the integrator in an upper direction or in a lower direction, and a connection-polarity inverting circuit for inverting a polarity of inputting of the current sensor voltage to the integrator, a polarity of connecting of the integration capacitor to the integrator and a counting direction of the counter, alternatively, at a regular time interval and synchronously.
    Type: Grant
    Filed: November 13, 2000
    Date of Patent: September 4, 2001
    Assignees: Hitachi, Ltd., Hitachi Maxell, Ltd., Hitachi ULSI Systems Co., Ltd.
    Inventors: Masaru Noda, Takashi Takeuchi, Shinji Tanaka, Mitsunori Tsuchiya, Takeshi Yamaguchi
  • Patent number: 6191492
    Abstract: An electronic device comprising a substrate having a frame, a metal lead and an electronic parts in a bonding structure, and a molding of an organic resin formed on the substrate, wherein the surface of the organic resin is provided with a hardened water-resistant or carbonaceous film or wherein pores at the surface of the organic resin are filled within an inactive gas such as argon because of a plasma treatment of the resin surface with the inactive gas whereby impurities are prevented from entering into the organic resin through the pores.
    Type: Grant
    Filed: December 6, 1993
    Date of Patent: February 20, 2001
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Mitsunori Tsuchiya, Kazuo Urata, Itaru Koyama, Shinji Imatou, Shigenori Hayashi, Naoki Hirose, Mari Sasaki, Noriya Ishida, Kouhei Wada
  • Patent number: 6157170
    Abstract: The present invention provides apparatus for detecting the integrated value of current flow, apparatus for detecting the value of current flow and a battery pack employing those apparatus each of which becomes insensitive to the offset in an operational amplifier. Each apparatus and the battery pack includes: a current sensor resistor inserted in series with a current path; an integrator; an input status selector; an integration capacitor connected to the integrator; and a connection-polarity inverter of the integration capacitor provided between the integrator and the integration capacitor.
    Type: Grant
    Filed: March 24, 1999
    Date of Patent: December 5, 2000
    Assignees: Hitachi, Ltd., Hitachi Maxell, Ltd., Hitachi ULSI Systems Co., Ltd.
    Inventors: Masaru Noda, Takashi Takeuchi, Shinji Tanaka, Mitsunori Tsuchiya, Takeshi Yamaguchi
  • Patent number: 5283087
    Abstract: A plasma process and an apparatus therefor are described. A number of substrates are disposed between a pair of electrodes, to which a high frequency electric power is applied in order to generate glow discharge and induce a plasma. The substrates in the plasma are applied with an alternating electric field. By virtue of the alternating electric field, the substrates are subjected to sputtering action.
    Type: Grant
    Filed: April 6, 1992
    Date of Patent: February 1, 1994
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Mitsunori Tsuchiya, Atsushi Kawano, Shinji Imatou, Kazuhisa Nakashita, Toshiji Hamatani, Takashi Inushima, Kenji Itou
  • Patent number: 5256483
    Abstract: A plasma process and an apparatus therefor are described. A number of substrates are disposed between a pair of electrodes, to which a high frequency electric power is applied in order to generate glow discharge and induce a plasma. The substrates in the plasma are applied with an alternating electric field. By virtue of the alternating electric field, the substrates are subjected to sputtering action.
    Type: Grant
    Filed: October 31, 1990
    Date of Patent: October 26, 1993
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Mitsunori Tsuchiya, Atsushi Kawano, Shinji Imatou, Kazuhisa Nakashita, Toshiji Hamatani, Takashi Inushima, Kenji Itou
  • Patent number: 5147822
    Abstract: An electronic device comprising a substrate having a frame, a metal lead and electronic parts in a bonding structure, and a molding of an organic resin formed on the substrate, wherein the surface of the organic resin is provided with a hardened water-resistant or carbonaceous film.
    Type: Grant
    Filed: February 25, 1991
    Date of Patent: September 15, 1992
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Mitsunori Tsuchiya, Kazuo Urata, Itaru Koyama, Shinji Imatou, Shigenori Hayashi, Naoki Hirose, Mari Sasaki, Noriya Ishida, Kouhei Wada
  • Patent number: 5079031
    Abstract: An improved apparatus and method for depositing thin films on a substrate. The apparatus utilizes two types of energy input. A pair of electrodes are provided in a reaction chamber and supplied with first AC electric energy at 1 to 100 MHz for generating a plasma gas in a reaction chamber therebetween. The substrate is mounted on a substrate holder to which second electric energy is supplied.
    Type: Grant
    Filed: March 17, 1989
    Date of Patent: January 7, 1992
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Shinji Imatou, Noriya Ishida, Mari Sasaki, Mitsunori Sakama, Takeshi Fukada, Naoki Hirose, Mitsunori Tsuchiya, Atsushi Kawano, Kazuhisa Nakashita, Junichi Takeyama, Toshiji Hamatani
  • Patent number: 5041201
    Abstract: Plasma CVD method and apparatus are described. The apparatus comprises a vacuum chamber in which two pairs of electrodes are provided. A high frequency voltage is applied to one of the pairs in order to produce a plasma from a reactive gas in the chamber. A substrate to be coated is located between the other of the pairs. A relatively low frequency voltage is applied to the other pair of electrodes. By virtue of the low frequency voltage, the substrate is exposed to the bombardment of ions of the plasma during deposition. The bombardment functions to remove relatively soft portions of the depositing material.
    Type: Grant
    Filed: September 7, 1989
    Date of Patent: August 20, 1991
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Mitsunori Tsuchiya, Shigenori Hayashi, Naoki Hirose, Noriya Ishida, Mari Sasaki, Atsushi Kawano
  • Patent number: 5007374
    Abstract: An apparatus suitable for mass-production of carbon coatings having a high degree of hardness. The apparatus utilized two types of energy input. First energy is inputted to a pair of electrodes provided in a reaction chamber, between which electrodes a deposition space is defined. A number of substrates to be coated are mounted on a plurality of substrate holders which are supplied with a second electric energy. The holders are arranged parallel to the electric field to prevent disturbance of the electric field.
    Type: Grant
    Filed: March 17, 1989
    Date of Patent: April 16, 1991
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Shinji Imatou, Mitsunori Tsuchiya, Kenji Itoh, Takashi Inushima, Atsushi Kawano
  • Patent number: 4987004
    Abstract: A plasma process and an apparatus therefor are described. A number of substrates are disposed between a pair of electrodes, to which a high frequency electric power is applied in order to generate glow discharge and induce a plasma. The substrates in the plasma are applied with an alternating electric field. By virtue of the alternating electric field, the substrates are subjected to sputtering action.
    Type: Grant
    Filed: May 11, 1990
    Date of Patent: January 22, 1991
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Mitsunori Tsuchiya, Atsushi Kawano, Shinji Imatou, Kazuhisa Nakashita, Toshiji Hamatani, Takashi Inushima, Kenji Itou
  • Patent number: 4971667
    Abstract: A plasma process and an apparatus therefor are described. A number of substrates are disposed between a pair of electrodes, to which a high frequency electromagnetic power is applied in order to generate glow discharge and induce a plasma. The substrates in the plasma are additionally applied with an alternating electric field. By virtue of the alternating electric field, the substrates are subjected to sputtering action.
    Type: Grant
    Filed: February 3, 1989
    Date of Patent: November 20, 1990
    Assignee: Semiconductor Energy Laboratory Co., Ltd.
    Inventors: Shunpei Yamazaki, Mitsunori Tsuchiya, Atsushi Kawano, Shinji Imatou, Kazuhisa Nakashita, Toshiji Hamatani, Takashi Inushima, Kenji Itou