Abstract: A manufacturing method of a probe according to the present embodiment is used to manufacture a probe for a scanning probe microscope. An insulating film is formed on the surface of a probe provided on a base. Metal ions are implanted into the insulating film. An electric field is applied to the insulating film to concentrate the metal ions in the insulating film at a tip of the probe and form a metallic filament in the insulating film.

Abstract: A manufacturing method of a probe according to the present embodiment is used to manufacture a probe for a scanning probe microscope. An insulating film is formed on the surface of a probe provided on a base. Metal ions are implanted into the insulating film. An electric field is applied to the insulating film to concentrate the metal ions in the insulating film at a tip of the probe and form a metallic filament in the insulating film.

Abstract: A charged particle beam apparatus has a chamber configured to accommodate a sample with. An inside of the chamber is decompressed. A tube having an opening is disposed in the chamber, and introduces a mixed gas having a plurality of types of gases, in a direction towards the sample. A first beam generator emits a charged particle beam toward at least one of a region between an opening of the tube and the sample, or a region of the sample against which the mixed gas collides. A mixed gas generator provides the mixed gas to the tube. The opening of the tube has an elongated shape in a cross section in a direction substantially perpendicular to a flow direction of the mixed gas.

Abstract: A charged particle beam apparatus has a chamber configured to accommodate a sample with. An inside of the chamber is decompressed. A tube having an opening is disposed in the chamber, and introduces a mixed gas having a plurality of types of gases, in a direction towards the sample. A first beam generator emits a charged particle beam toward at least one of a region between an opening of the tube and the sample, or a region of the sample against which the mixed gas collides. A mixed gas generator provides the mixed gas to the tube. The opening of the tube has an elongated shape in a cross section in a direction substantially perpendicular to a flow direction of the mixed gas.

Abstract: In one embodiment, a sample processing method includes placing a sample on a sample placing module, and setting first processing boxes on one side of slice formation scheduled regions of the sample, and second processing boxes on the other side thereof. The method includes processing the sample by performing a primary scan which sequentially scans the first processing boxes with a continuously generated ion beam, and a secondary scan which sequentially scans the second processing boxes with a continuously generated ion beam, to form slices of the sample. The primary and secondary scans are performed so that a first scanning condition for scanning first regions within the first and second processing boxes is set different from a second scanning condition for scanning second regions between the first processing boxes and between the second processing boxes, to allow frame portions of the sample to remain in the second regions.

Abstract: An impurity diffusion surface layer is formed in a surface of a silicon substrate, and an aluminum electrode is arranged in direct contact with the impurity diffusion layer. The surface layer contains Ge as an impurity serving to change the lattice constant in a concentration of at least 1.times.10.sup.21 cm.sup.-3 under a thermal non-equilibrium state. The lattice constant of the surface layer is set higher than that of silicon containing the same concentration of germanium under a thermal equilibrium state. As a result, it is possible to decrease the Schittky barrier height at the contact between the surface layer and the electrode. The surface layer also contains an electrically active boron as an impurity serving to impart carriers in a concentration higher than the critical concentration of solid solution in silicon under a thermal equilibrium state. The presence of Ge permits the carrier mobility within the surface layer higher than that within silicon.

Abstract: An electron-beam lithography system employing an "electron holography" technique is disclosed. The system at least comprises: a shaping aperture for shaping an electron beam emitted from an electron-beam source so as to have a specific beam shape; at least two single crystal thin films for diffracting the electron beam passed through this shaping aperture; focusing means for respectively focusing the incident electron beam passed through these single crystal thin films and the diffracted electron beams diffracted by these single crystal thin films; and a select aperture for selecting only the desired diffracted electron beams. The transmitted incident electron beam interferes with the diffracted electron beams, whereby a stripe pattern having a desired nanometer-order pitch is formed on a resist surface coated onto a semiconductor substrate or a mask blank.

Abstract: An impurity diffusion surface layer is formed in a surface of a silicon substrate, and an aluminum electrode is arranged in direct contact with the impurity diffusion layer. The surface layer contains Ge as an impurity serving to change the lattice constant in a concentration of at least 1.times.10.sup.21 cm.sup.-1 under a thermal non-equilibrium state. The lattice constant of the surface layer is set higher than that of silicon containing the same concentration of germanium under a thermal equilibrium state. As a result, it is possible to decrease the Schittky barrier height at the contact between the surface layer and the electrode. The surface layer also contains an electrically active boron as an impurity serving to impart carriers in a concentration higher than the critical concentration of solid solution in silicon under a thermal equilibrium state. The presence of Ge permits the carrier mobility within the surface layer higher than that within silicon.

Abstract: Instead of having separate digital display means for seconds, minutes, hours, dates and months, an electronic timepiece uses the same liquid crystal display and differentiates between seconds, minutes, hours, dates and months by displaying each in a different color. This makes it possible to have the timepiece smaller and at the same time have the individual digits of the display larger and hence more easily legible. The different colors of the display are obtained by using a plurality of driving voltages for the liquid crystal display device and switching circuitry for applying the different drive voltages to the liquid crystal device according to whether seconds, minutes, hours, dates or months is to be displayed.